Defect Distribution and Defect Kinetics in Undoped and Boron-Doped A-Si:H Investigated by Modulated Photocurrents
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ABSTRACTGap state profiles in a-Si:H around the Fermi energy have been determined by phase shift analysis of modulated photocurrents. Measurements on different samples in various light-soaked and annealed states show a general strong correlation of the defect structure with the Fermi level position, with a minimum in the DOS at Ef and a peak above Ef. A model of the defect structure involving a peak of D+ states above Ef is outlined that accounts for the observed correlations.
1975 ◽
Vol 38
(9)
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pp. 1099-1141
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2012 ◽
Vol 177
(15)
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pp. 1261-1267
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1989 ◽
Vol 48
(6)
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pp. 517-520
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2005 ◽
Vol 20
(08n09)
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pp. 1818-1821