Effect of Light Exposure Conditions on the Light-Induced Degradation in Amorphous Silicon Alloy Solar Cells

1991 ◽  
Vol 219 ◽  
Author(s):  
Y. Nakata ◽  
A. Yokota ◽  
H. Sannomiya ◽  
S. Moriuchi ◽  
Y. Inoue ◽  
...  

ABSTRACTLight-induced changes in current-voltage characteristics of amorphous single-junction solar cells made of silicon alloys, a-SiC, a-Si, and a-SiGe have been studied systematically. The effect of the light intensity and the bias voltage on the light-induced degradation in the conversion efficiency and other photovoltaic parameters has been clarified quantitatively, and it has been shown that the light-induced degradation characteristics of the photovoltaic parameters can be described by a single function of some normalized parameters of exposure condition. Theoretical background for the experimental results is also examined and discussed by applying a defect creation model modified to an active layer of the a-Si alloy solar cells. Utilizing these analytical formula, we propose an accelerated test method by solar simulator indoor measurement instead of natural sunlight outdoor testing.

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.


1999 ◽  
Vol 557 ◽  
Author(s):  
S.J. Jones ◽  
R. Crucet ◽  
X. Deng ◽  
J. Doehler ◽  
R. Kopf ◽  
...  

AbstractUsing a Gas Jet thin film deposition technique, microcrystalline silicon (μc-Si) materials were prepared at rates as high as 15-20 Å/s. The technique involves the use of a gas jet flow that is subjected to a high intensity microwave source. The quality of the material has been optimized through the variation of a number of deposition conditions including the substrate temperature, the gas flows, and the applied microwave power. The best films were made using deposition rates near 16 Å/s. These materials have been used as i-layers for red light absorbing, nip single-junction solar cells. Using a 610nm cutoff filter which only allows red light to strike the device, pre-light soaked currents as high as 10 mA/cm2 and 2.2-2.3% red-light pre-light soaked peak power outputs have been obtained for cells with i-layer thicknesses near 1 micron. This compares with currents of 10-11 mA/cm2 and 4% initial red-light peak power outputs obtained for high efficiency amorphous silicon germanium alloy (a-SiGe:H) devices. The AM1.5 white light efficiencies for these microcrystalline cells are 5.9-6.0%. While the efficiencies for the a-SiGe:H cells degrade by 15-20% after long term light exposure, the efficiencies for the microcrystalline cells before and after prolonged light exposure are similar, within measurement error. Considering these results, the Gas Jet deposition method is a promising technique for the deposition of μc-Si solar cells due to the ability to achieve reasonable stable efficiencies for cells at i-layer deposition rates (16 Å/s) which make large-scale production economically feasible.


2021 ◽  
Vol 5 (2) ◽  
pp. 15
Author(s):  
Mitsuru Imaizumi ◽  
Takeshi Ohshima ◽  
Yosuke Yuri ◽  
Kohtaku Suzuki ◽  
Yoshifumi Ito

We investigated the effects of irradiation beam conditions on the performance degradation of silicon and triple-junction solar cells for use in space. The fluence rates of electron and proton beams were varied. Degradation did not depend on the fluence rate of protons for both cells. A higher fluence rate of electrons caused greater degradation of the Si cell, but the dependence was due to the temperature increase during irradiation. Two beam-area expansion methods, defocusing and scanning, were examined for proton irradiation of various energies (50 keV–10 MeV). In comparing the output degradation from irradiation with defocused and scanned proton beams, no significant difference in degradation was found for any proton energy. We plan to reflect these findings into ISO standard of irradiation test method of space solar cells.


2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Alexander Axelevitch ◽  
Gady Golan

Metal nanodimension structures have multiple applications in modern technology. Noncontinuous thin island metal films of several types of metals deposited on dielectric or semiconductor surface introduce a unique behavior. In response to light exposure in certain range, the metal islands present a resonant absorption of light accompanied with a collective behavior of free electrons in these islands. In this paper, we present one of the possible ways to increase the efficiency of solar cells with metal islands imbedded in a semiconductor junction. Rough calculation was performed for a silicon solar cell and showed an increase of 17.5% in the overall efficiency of the cell.


2017 ◽  
Vol 19 (3) ◽  
pp. 2549-2556 ◽  
Author(s):  
Yang Li ◽  
Junting Wang ◽  
Yi Yuan ◽  
Min Zhang ◽  
Xiandui Dong ◽  
...  

Two perylene dyes characteristic of electron-donors phenanthrocarbazole (PC) and carbazyl functionalized PC are selected to study the complicated dynamics of excited states and charge carriers, which underlie the photovoltaic parameters of dye-sensitized solar cells (DSCs).


ACS Omega ◽  
2020 ◽  
Vol 5 (36) ◽  
pp. 23039-23052 ◽  
Author(s):  
Muhammad Usman Khan ◽  
Muhammad Khalid ◽  
Muhammad Nadeem Arshad ◽  
Muhammad Naeem Khan ◽  
Muhammad Usman ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document