Studies of MOS and Heterojunction Devices Using Doped μc-Si and a-Si

1991 ◽  
Vol 219 ◽  
Author(s):  
D. R. Lee ◽  
C. H. Bjorkman ◽  
C. Wang ◽  
G. Lucovsky
Keyword(s):  
Photovoltaic Effect ◽  
Chemical Vapor ◽  
Flat Band ◽  
Mos Capacitor ◽  
Gate Electrodes ◽  
Mos Devices ◽  
Current Voltage ◽  
Heavily Doped ◽  
Si Films ◽  
Band Structure Model

ABSTRACTCurrent-voltage voltage characteristics of heterojunctions formed by remote plasma enhanced chemical vapor deposition (PECVD) of heavily doped μc-Si onto doped c-Si have been studied, as well as capacitance-voltage characteristics of MOS capacitor structures using heavily doped remote PECVD μc-Si and a-Si films as gate electrodes on thermally oxidized crystalline Si. Shifts in the flat-band voltages of MOS devices using the μc-Si and a-Si as gate electrodes relative to that of a reference Al/SiO2/c-Si structure are measured and explained in terms of a band structure model for the μc-Si and a-Si. Rectification and a photovoltaic effect observed in the pn heterojunctions are also explained in context of the same model.

Deposition of Heavily-Doped μc-Silicon Thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition Process (remote PECVD)

1990 ◽  
Vol 204 ◽  
Author(s):  
C. Wang ◽  
C.H. Bjorkman ◽  
D.R. Lee ◽  
M.J. Williams ◽  
G. Lucovsky
Keyword(s):  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Silicon Thin Films ◽  
Mos Devices ◽  
Exit Port ◽  
Heavily Doped ◽  
Si Films ◽  
P Type

ABSTRACTWe have succeeded in depositing both activated n- and p-type μc-Si, by a low temperature, 250°C, remote PECVD process in which dopant gases (PH3 or B2H6)/Silane (SiH4) mixtures are injected downstream from the exit port of a He/H2 plasma. The room temperature conductivities and activation energies for the n- and p-type μc-Si are respectively, 40 S/cm with Eaa=0.018 eV, and 5 S/cm with Ea =0.040 eV. Doped μc-Si is obtained for PH3/SiH4 ratios up to 1%, and for B2H6/SiH4 ratios to 0.1%. For B2H6/SiH4 ratios < 0.1%, the deposited p-type material is doped a-Si rather than doped μc-Si. We have shown that these heavily doped μc-Si film are a viable candidate for the gate electrode in MOS devices. The application of these doped μc-Si films in p-i-n diode devices has also been studied.

Applications of Solid Phase Doping in Manufacturing MOS Devices

1990 ◽  
Vol 182 ◽  
Author(s):  
S. F. Gong ◽  
H. T. G. Hentzell ◽  
A. Robertsson
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Field Effect Transistors ◽  
Solid Phase ◽  
Mos Devices ◽  
Transmission Electron ◽  
Heavily Doped ◽  
Si Films ◽  
Secondary Ion ◽  
Si Wafer

AbstractSolid phase doping from Sb heavily-doped Si films has been studied by using transmission electron microscopy and secondary ion mass spectroscopy. Based on the results of the material study, metal-oxidesemiconductor field effect transistors (MOSFETs) made on a (100) Si wafer, and thin film transistors have been implemented. The technique for the MOSFETs suggests the possibility for making small dimensional and high speed integrated circuits by using the method of solid phase doping.

High Temperature Rectifying Contacts on Semiconducting Diamond Using Doped Silicon

1992 ◽  
Vol 270 ◽  
Author(s):  
V. Venkatesan ◽  
D.G. Thompson ◽  
K. Das
Keyword(s):  
High Temperature ◽  
Space Charge ◽  
Chemical Vapor ◽  
Diamond Crystals ◽  
State Diffusion ◽  
Current Voltage ◽  
Pressure Chemical ◽  
Semiconducting Diamond ◽  
Si Films ◽  
Space Charge Limited

ABSTRACTHigh temperature rectifying contacts have been fabricated on naturally occurring lib semiconducting diamond crystals using highly doped Si. Polycrystalline Si deposited by low pressure chemical vapor deposition (LPCVD) and amorphous Si deposited by sputtering were investigated. Following LPCVD deposition, the polycrystalline Si filn was doped with P by solid state diffusion at a temperature of 900°C using a POCI3 source. Boron doped and As doped Si films were deposited by sputtering from highly doped Si targets. Current-voltage measurements were performed on the fabricated P doped, B doped and As doped Si contacts from room temperature up to ∼400∼C. In all cases, the contacts yielded excellent rectification in the temperature range investigated. Current conduction in doped Si/diamond systems appears to be space charge limited. The position and concentration of deep levels in a natural lib diamond crystal have been determined from an analysis of space charge limited current-voltage (I-V) characteristics.

Nanoprobing Applications with Capacitance-Voltage and Pulsed Current-Voltage Measurements for Device Failure Analysis

2015 ◽  
Author(s):  
LiLung Lai ◽  
Nan Li ◽  
Qi Zhang ◽  
Tim Bao ◽  
Robert Newton
Keyword(s):  
Failure Analysis ◽  
High Speed ◽  
Pulsed Current ◽  
Electrical Measurements ◽  
Device Failure ◽  
Mos Devices ◽  
Atomic Force ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Rising Time

Abstract Owing to the advancing progress of electrical measurements using SEM (Scanning Electron Microscope) or AFM (Atomic Force Microscope) based nanoprober systems on nanoscale devices in the modern semiconductor laboratory, we already have the capability to apply DC sweep for quasi-static I-V (Current-Voltage), high speed pulsing waveform for the dynamic I-V, and AC imposed for C-V (Capacitance-Voltage) analysis to the MOS devices. The available frequency is up to 100MHz at the current techniques. The specification of pulsed falling/rising time is around 10-1ns and the measurable capacitance can be available down to 50aF, for the nano-dimension down to 14nm. The mechanisms of dynamic applications are somewhat deeper than quasi-static current-voltage analysis. Regarding the operation, it is complicated for pulsing function but much easy for C-V. The effective FA (Failure Analysis) applications include the detection of resistive gate and analysis for abnormal channel doping issue.

The Properties Of a-Si:H/c-Si Heterostructures Prepared By 55 kHz Pecvd For Solar Cell Application

1997 ◽  
Vol 485 ◽  
Author(s):  
B. G Budaguan ◽  
A. A. Aivazov ◽  
A. A. Sherchenkov ◽  
A. V Blrjukov ◽  
V. D. Chernomordic ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Low Frequency ◽  
Reverse Current ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Solar Cell Application ◽  
Current Voltage ◽  
Frequency Plasma ◽  
Device Applications

AbstractIn this work a-Si:H/c-Si heterostructures with good electronic properties of a-Si:H were prepared by 55 kHz Plasma Enhanced Chemical Vapor Deposition (PECVD). Currentvoltage and capacitance-voltage characteristics of a-Si:H/c-Si heterostructures were measuredto investigate the influence of low frequency plasma on the growing film and amorphous silicon/crystalline silicon boundary. It was established that the interface state density is low enough for device applications (<2.1010 cm−2). The current voltage measurements suggest that, when forward biased, space-charge-limited current determines the transport mechanism in a- Si:H/c-Si heterostructures, while reverse current is ascribed to the generation current in a-Si:H and c-Si depletion layers.

A Comparison of Mos Devices with In-Situ Boron Doped Polysilicon and Poly Sige Gates Deposited in an Rtcvd System Using S12H6 and B2H6 Gas Mixture

1998 ◽  
Vol 525 ◽  
Author(s):  
M. R. Mirabedini ◽  
V. Z-Q Li ◽  
A. R. Acker ◽  
R. T. Kuehn ◽  
D. Venables ◽  
...  
Keyword(s):  
Flat Band ◽  
Gas Mixture ◽  
Mos Capacitors ◽  
Mos Devices ◽  
Boron Doped ◽  
Depletion Effect ◽  
Polysilicon Films ◽  
Sims Analysis ◽  
Boron Penetration

ABSTRACTIn this work, in-situ doped polysilicon and poly-SiGe films have been used as the gate material for the fabrication of MOS devices to evaluate their respective performances. These films were deposited in an RTCVD system using a Si2H6 and GeH4 gas mixture. MOS capacitors with 45 Å thick gate oxides and polysilicon/poly-SiGe gates were subjected to different anneals to study boron penetration. SIMS analysis and flat band voltage measurements showed much lower boron penetration for devices with poly-SiGe gates than for devices with polysilicon gates. In addition, C-V measurements showed no poly depletion effects for poly-SiGe gates while polysilicon gates had a depletion effect of about 8%. A comparison of resistivities of these films showed a low resistivity of 1 mΩ-cm for poly-SiGe films versus 3 mΩ-cm for polysilicon films after an anneal at 950 °C for 30 seconds.

Properties of Thin SiO2 Films with In-Situ Deposition of Poly Si Electrodes

1989 ◽  
Vol 146 ◽  
Author(s):  
Paihung Pan ◽  
Ahmad Kermani ◽  
Wayne Berry ◽  
Jimmy Liao
Keyword(s):  
Electrical Properties ◽  
Breakdown Strength ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
In Situ Deposition ◽  
Different Temperatures ◽  
Flatband Voltage ◽  
Si Films

ABSTRACTElectrical properties of thin (12 nm) SiO2 films with and without in-situ deposited poly Si electrodes have been studied. Thin SiO2 films were grown by the rapid thermal oxidation (RTO) process and the poly Si films were deposited by the rapid thermal chemical vapor deposition (RTCVD) technique at 675°C and 800°C. Good electrical properties were observed for SiO2 films with thin in-situ poly Si deposition; the flatband voltage was ∼ -0.86 V, the interface state density was < 2 × 1010/cm2/eV, and breakdown strength was > 10 MV/cm. The properties of RTCVD poly Si were also studied. The grain size was 10-60 rim before anneal and was 50-120 rim after anneal. Voids were found in thin (< 70 nm) RTCVD poly Si films. No difference in either SiO2 properties or poly Si properties was observed for poly Si films deposited at different temperatures.

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