Homogeneous Gas Phase Nucleation of Silane in Low Pressure Chemical Vapor Deposition (LPCVD)

1988 ◽  
Vol 135 (9) ◽  
pp. 2378-2379 ◽  
Author(s):  
Z. M. Qian ◽  
H. Michiel ◽  
A. Van Ammel ◽  
J. Nijs ◽  
R. Mertens
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Phase Nucleation

Low pressure chemical vapor deposition of silicon nitride using the environmentally friendly tris(dimethylamino)silane precursor

1996 ◽  
Vol 11 (6) ◽  
pp. 1483-1488 ◽  
Author(s):  
R. A. Levy ◽  
X. Lin ◽  
J. M. Grow ◽  
H. J. Boeglin ◽  
R. Shalvoy
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Environmentally Benign ◽  
Silicon Nitride Films ◽  
Pressure Chemical ◽  
Phase Nucleation ◽  
Silane Precursor

This study investigates the use of the environmentally benign precursor tri(dimethylamino)silane (TDMAS) with NH3 to synthesize silicon nitride films by low pressure chemical vapor deposition. The growth kinetics are investigated as a function of deposition temperature, total pressure, and NH3/TDMAS flow ratios. The deposits are found to be essentially stoichiometric and to contain ∼5 at. % carbon when appropriate NH3 concentrations are present. The films are found in all cases to be amorphous and highly tensile. For optimized processing conditions, values of the refractive index are close to those reported for Si3N4. The film density is observed to increase with higher deposition temperatures up to 800 °C and then decrease due to the onset of gas phase nucleation effects. This behavior is readily reflected in the etch rate of those films. FTIR spectra reveal the presence of hydrogen even at high deposition temperatures (900 °C). Hardness and Young's modulus of the films are seen to increase with higher deposition temperatures, reaching saturation values near 20 and 185 GPa, respectively, above 800 °C.

Gas-phase nucleation during chemical vapor deposition of copper films and its effect on the resistivity of deposited films

1999 ◽  
Vol 14 (11) ◽  
pp. 4345-4350
Author(s):  
I. A. Rauf ◽  
R. Siemsen ◽  
M. Grunwell ◽  
R. F. Egerton ◽  
M. Sayer
Keyword(s):  
Electrical Resistivity ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Copper Films ◽  
Pressure Chemical ◽  
Phase Nucleation ◽  
Substrate Temperatures ◽  
Deposited Films

A study of the electrical resistivity and microstructure of thin copper films deposited by low-pressure chemical vapor deposition from copper (I) hexafluoroacetylacetonate vinyltrimethylsilane (Cupra Select) was undertaken. Evidence for the nucleation of solid copper in the gas phase at substrate temperatures of about 250 °C is presented. A process to predict the effects of gas-phase nucleation and growth on the electrical resistivity of the resulting film is discussed.

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