Self-consistent modeling of the current–voltage characteristics of resonant tunneling structures with type II heterojunctions

1997 ◽  
Vol 82 (5) ◽  
pp. 2421-2426 ◽  
Author(s):  
I. Lapushkin ◽  
A. Zakharova ◽  
V. Gergel ◽  
H. Goronkin ◽  
S. Tehrani
Keyword(s):  
Resonant Tunneling ◽  
Type Ii ◽  
Current Voltage ◽  
Self Consistent ◽  
Current Voltage Characteristics

Simulation of Polarization Effect in GaN/AlN Resonant Tunneling Diode

2013 ◽  
Vol 774-776 ◽  
pp. 691-694
Author(s):  
Nai Yun Tang
Keyword(s):  
Electronic Properties ◽  
Resonant Tunneling ◽  
Polarization Effect ◽  
Resonant Tunneling Diode ◽  
Band Diagram ◽  
Poisson Equations ◽  
Tunneling Diode ◽  
Current Voltage ◽  
Self Consistent ◽  
Current Voltage Characteristics

Influence of polarization effect on current across GaN/AlNresonant tunneling diode (RTD) is simulated by self-consistent calculations ofSchrödinger and Poisson equations. When taking into account polarization chargesat the heterointerface, the band diagram and electronic properties of RTD areobviously changed. As a result, the current-voltage characteristics showsasymmetrical phenomenon. As the polarization effect is enhanced, the resonancepeak is shifted accordingly and even disappears.

Asymmetric current-voltage characteristics in type-II superconductors

1994 ◽  
Vol 49 (13) ◽  
pp. 9244-9247 ◽  
Author(s):  
Xiuguang Jiang ◽  
P. J. Connolly ◽  
S. J. Hagen ◽  
C. J. Lobb
Keyword(s):  
Type Ii ◽  
Type Ii Superconductors ◽  
Current Voltage ◽  
Current Voltage Characteristics
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