Temperature Dependent Recombination Lifetime in Silicon: Influence of Trap Level

1990 ◽  
Vol 209 ◽  
Author(s):  
Andrzej Buczkowski ◽  
Zbigniew J. Radzimski ◽  
Yoshi Kirino ◽  
Fumio Shimura ◽  
George A. Rozgonyi
Keyword(s):  
Dislocation Density ◽  
Energy Level ◽  
Polycrystalline Material ◽  
Threading Dislocation ◽  
Trap Level ◽  
Extended Defects ◽  
Temperature Dependent ◽  
Recombination Lifetime ◽  
Threading Dislocation Density ◽  
Silicon Materials

ABSTRACTThis paper discusses the temperature dependence of recombination lifetime in a variety of silicon materials using energy level as a parameter. A theoretical approach based on the Shockley-Read-Hall theory for energy level calculations has been used. Various types of defects created by introducing impurities, dislocations and grain boundaries into silicon waferswere studied. Results are presented for Czochralski grown Si wafers intentionally contaminated with gold and chromium, EFG ribbon with varying concentration of oxygen, web ribbons with extended defects and contaminants, large grain polycrystalline material, and Si/Si-Ge/Si heterostructures with varying misfit and threading dislocation density.

High-Irradiance Degradation Studies of Metamorphic 1eV GaInAs Solar Cells

2012 ◽  
Vol 1432 ◽  
Author(s):  
Ryan M. France ◽  
Myles A. Steiner
Keyword(s):  
Solar Cells ◽  
Active Region ◽  
Dislocation Density ◽  
Dark Current ◽  
Degradation Mechanism ◽  
Control Cell ◽  
High Irradiance ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Degradation Studies

ABSTRACTInitial tests are performed regarding the degradation of lattice-mismatched GaInAs solar cells. 1eV metamorphic GaInAs solar cells with 1-2×106 cm-2 threading dislocation density in the active region are irradiated with an 808 nm laser for 2 weeks time under a variety of temperature and illumination conditions. All devices show a small degradation in Voc that is logarithmic with time. The absolute loss in performance after 2 weeks illuminated at 1300 suns equivalent and 125°C is 7 mV Voc and 0.2% efficiency, showing these devices to be relatively stable. The dark current increases with time and is analyzed with a two-diode model. A GaAs control cell degrades at the same rate, suggesting that the observed degradation mechanism is not related to the additional dislocations in the GaInAs devices.

Relationship between misfit-dislocation formation and initial threading-dislocation density in GaInN/GaN heterostructures

2015 ◽  
Vol 54 (11) ◽  
pp. 115501 ◽  
Author(s):  
Motoaki Iwaya ◽  
Taiji Yamamoto ◽  
Daisuke Iida ◽  
Yasunari Kondo ◽  
Mihoko Sowa ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Misfit Dislocation ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Dislocation Formation

Enhanced reduction in threading dislocation density in Ge grown on porous silicon during annealing due to porous buffer reconstruction

2015 ◽  
Vol 213 (1) ◽  
pp. 96-101
Author(s):  
G. Calabrese ◽  
S. Baricordi ◽  
P. Bernardoni ◽  
D. De Salvador ◽  
M. Ferroni ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Threading Dislocation Density

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

A surfactant-mediated relaxed Si0.5Ge0.5 graded layer with a very low threading dislocation density and smooth surface

1999 ◽  
Vol 75 (11) ◽  
pp. 1586-1588 ◽  
Author(s):  
J. L. Liu ◽  
C. D. Moore ◽  
G. D. U’Ren ◽  
Y. H. Luo ◽  
Y. Lu ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Smooth Surface ◽  
Threading Dislocation ◽  
Threading Dislocation Density

Evaluation of threading dislocation density of strained Ge epitaxial layer by high resolution x-ray diffraction

2017 ◽  
Vol 26 (12) ◽  
pp. 127309 ◽  
Author(s):  
Yuan-Hao Miao ◽  
Hui-Yong Hu ◽  
Xin Li ◽  
Jian-Jun Song ◽  
Rong-Xi Xuan ◽  
...  
Keyword(s):  
High Resolution ◽  
Dislocation Density ◽  
Epitaxial Layer ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Threading Dislocation Density
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