Effect of threading dislocation density and dielectric layer on temperature-dependent electrical characteristics of high-hole-mobility metal semiconductor field effect transistors fabricated from wafer-scale epitaxially grown p-type germanium on silicon substrates

2014 ◽  
Vol 115 (9) ◽  
pp. 094507 ◽  
Author(s):  
Swapnadip Ghosh ◽  
Darin Leonhardt ◽  
Sang M. Han
Keyword(s):  
Dislocation Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Silicon Substrates ◽  
Threading Dislocation ◽  
Electrical Characteristics ◽  
Temperature Dependent ◽  
Threading Dislocation Density ◽  
P Type

scholarly journals Diamond Based Field-Effect Transistors of Zr Gate withSiNxDielectric Layers

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
W. Wang ◽  
C. Hu ◽  
S. Y. Li ◽  
F. N. Li ◽  
Z. C. Liu ◽  
...  
Keyword(s):  
Carrier Density ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Conduction Channel ◽  
Effect Transistor ◽  
P Type ◽  
Interface Bond ◽  
Transfer Properties

Investigation of Zr-gate diamond field-effect transistor withSiNxdielectric layers (SD-FET) has been carried out. SD-FET works in normally on depletion mode with p-type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 × 1013 cm−2and 24.4 cm2·V−1·s−1, respectively. The output and transfer properties indicate the preservation of conduction channel because of theSiNxdielectric layer, which may be explained by the interface bond of C-N. High voltage up to −200 V is applied to the device, and no breakdown is observed. For comparison, another traditional surface channel FET (SC-FET) is also fabricated.

Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x

2001 ◽  
Vol 79 (25) ◽  
pp. 4246-4248 ◽  
Author(s):  
C. W. Leitz ◽  
M. T. Currie ◽  
M. L. Lee ◽  
Z.-Y. Cheng ◽  
D. A. Antoniadis ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Strained Si ◽  
P Type

Performance of AlGaInP LEDs on silicon substrates through low threading dislocation density (TDD) germanium buffer layer

2018 ◽  
Vol 33 (10) ◽  
pp. 104004 ◽  
Author(s):  
Yue Wang ◽  
Bing Wang ◽  
Desmond Fu Shen Eow ◽  
Jurgen Michel ◽  
Kenneth Eng Kian Lee ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Buffer Layer ◽  
Silicon Substrates ◽  
Threading Dislocation ◽  
Threading Dislocation Density

Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density

2011 ◽  
Vol 679-680 ◽  
pp. 694-697 ◽  
Author(s):  
Fujiwara Hirokazu ◽  
Masaki Konishi ◽  
T. Ohnishi ◽  
T. Nakamura ◽  
Kimimori Hamada ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Leakage Current ◽  
Surface Defects ◽  
High Yield ◽  
Threading Dislocation ◽  
Electrical Characteristics ◽  
Large Area ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Threading Dislocation Density

The impacts of threading dislocations, surface defects, donor concentration, and schottky Schottky barrier height on the reverse IV characteristic of silicon carbide (SiC) junction barrier schottky Schottky (JBS) diodes were investigated. The 100 A JBS diodes were fabricated on 4H-SiC 3-inch N-type wafers with two types of threading dislocation density. The typical densities are were 0.2×104 and 3.8×104 cm-2, respectively. The improvement of vIt was found that variations in the leakage current and the high yield of large area JBS diodes werecould be were obtained improved by using a wafer with a low threading dislocation density. In the range of low leakage current, the investigation shows showed a correlation between leakage current and threading dislocation density.

Temperature Dependent Recombination Lifetime in Silicon: Influence of Trap Level

1990 ◽  
Vol 209 ◽  
Author(s):  
Andrzej Buczkowski ◽  
Zbigniew J. Radzimski ◽  
Yoshi Kirino ◽  
Fumio Shimura ◽  
George A. Rozgonyi
Keyword(s):  
Dislocation Density ◽  
Energy Level ◽  
Polycrystalline Material ◽  
Threading Dislocation ◽  
Trap Level ◽  
Extended Defects ◽  
Temperature Dependent ◽  
Recombination Lifetime ◽  
Threading Dislocation Density ◽  
Silicon Materials

ABSTRACTThis paper discusses the temperature dependence of recombination lifetime in a variety of silicon materials using energy level as a parameter. A theoretical approach based on the Shockley-Read-Hall theory for energy level calculations has been used. Various types of defects created by introducing impurities, dislocations and grain boundaries into silicon waferswere studied. Results are presented for Czochralski grown Si wafers intentionally contaminated with gold and chromium, EFG ribbon with varying concentration of oxygen, web ribbons with extended defects and contaminants, large grain polycrystalline material, and Si/Si-Ge/Si heterostructures with varying misfit and threading dislocation density.

Diethynyl Aryl Derivatives for P-Channel and N-Channel Organic Field-Effect Transistors

2008 ◽  
Vol 1091 ◽  
Author(s):  
Takeshi Yasuda ◽  
Kimiaki Kashiwagi ◽  
Yoshitomi Morizawa ◽  
Tetsuo Tsutsui
Keyword(s):  
Field Effect ◽  
High Field ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
The Other ◽  
Organic Field Effect Transistors ◽  
Current Ratio ◽  
Naphthalene Derivative ◽  
Aryl Derivative ◽  
P Type

AbstractOrganic field-effect transistors (OFETs) consisted of vacuum-evaporated diethynyl aryl derivatives were prepared and the device characteristics were evaluated. The fabricated OFETs showed typical p-type characteristics for diethynyl naphthalene derivative with two end naphthyl groups. By optimizing the fabrication process, the device exhibited a high field-effect hole mobility up to 0.12 cm2V−1s−1 and a high on/off current ratio of 3.3×105. On the other hand, OFETs showed typical n-type characteristics for diethynyl aryl derivative with two end heptafluoronaphthyl groups. We have observed clear changes from p-channel to n-channel conductions in OFETs by chemically modifying diethynyl aryl derivatives.

scholarly journals Air Processed Cs2AgBiBr6 Lead-free Double Perovskite High-mobility Thin Film Field-effect Transistors

2021 ◽  
Author(s):  
Gnanasampanthan Abiram ◽  
Fatemeh Heidari Gourji ◽  
Selvakumar Pitchaiya ◽  
Punniamoorthy Ravirajan ◽  
Thanihaichelvan Murugathas ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Perovskite ◽  
Hole Mobility ◽  
Channel Length ◽  
P Type

Abstract This study focuses on the fabrication and characterization of Cs2AgBiBr6 double perovskite thin film for field-effect transistor (FET) applications. The Cs2AgBiBr6 thin films were fabricated using a solution process technique and the observed XRD patterns demonstrate no diffraction peaks of secondary phases, which confirms the phase-pure crystalline nature. The average grain sizes of the spin-deposited film were also calculated by analysing the statistics of grain size in SEM image and was found to be around 412 (±44) nm the larger grain size was also confirmed by the XRD measurements. FETs with different channel lengths of Cs2AgBiBr6 thin films were fabricated on an electrode deposited heavily doped p-type Si substrate with a 300 nm thermally grown SiO2 dielectric under ideal conditions in air processing under ambient pressure and temperature. The Cs2AgBiBr6 FETs showed a p-type nature with a positive threshold voltage. The on current, threshold voltage and hole-mobility of the FETs decreased with increasing channel length. A high average hole mobility of 0.29 cm2s-1V-1 was obtained for the FETs with a channel length of 30 µm, and the hole mobility was reduced by an order of magnitude (0.012 cm2s-1V-1) when the channel length was doubled. The on current and hole-mobility of Cs2AgBiBr6 FETs followed a power fit, which confirmed the dominance of channel length in electrostatic gating in Cs2AgBiBr6 FETs. A very high-hole mobility observed in or FET that could be attributed to the much larger grain size of Cs2AgBiBr6 film made in this work.

High-Irradiance Degradation Studies of Metamorphic 1eV GaInAs Solar Cells

2012 ◽  
Vol 1432 ◽  
Author(s):  
Ryan M. France ◽  
Myles A. Steiner
Keyword(s):  
Solar Cells ◽  
Active Region ◽  
Dislocation Density ◽  
Dark Current ◽  
Degradation Mechanism ◽  
Control Cell ◽  
High Irradiance ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Degradation Studies

ABSTRACTInitial tests are performed regarding the degradation of lattice-mismatched GaInAs solar cells. 1eV metamorphic GaInAs solar cells with 1-2×106 cm-2 threading dislocation density in the active region are irradiated with an 808 nm laser for 2 weeks time under a variety of temperature and illumination conditions. All devices show a small degradation in Voc that is logarithmic with time. The absolute loss in performance after 2 weeks illuminated at 1300 suns equivalent and 125°C is 7 mV Voc and 0.2% efficiency, showing these devices to be relatively stable. The dark current increases with time and is analyzed with a two-diode model. A GaAs control cell degrades at the same rate, suggesting that the observed degradation mechanism is not related to the additional dislocations in the GaInAs devices.

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