Material Characterization of Low-Temperature Silicon Epitaxial Growth on Patterned Oxidized Wafers by ULPCVD From SiH4/SiF4/H2

1990 ◽  
Vol 202 ◽  
Author(s):  
Tri-Rung Yew ◽  
Rafael Reif Reif
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Material Characterization ◽  
Large Scale ◽  
Chemical Vapor ◽  
Surface Cleaning ◽  
Selective Epitaxial Growth ◽  
Pressure Chemical ◽  
Scale Integration

ABSTRACTLow temperature silicon selective epitaxial growth on patterned oxidized wafers is becoming crucial to ultra large scale integration (ULSI) technologies. Low temperature processes can reduce dopant redistribution via solid state diffusion so that a sharp transition region can be obtained. This paper presents material characterization of epitaxial films grown on patterned oxidized wafers by ultralow pressure chemical vapor deposition (ULPCVD) from SiH4/SiF4/H2 (≤ 10 mTorr), in which SiF4 was used to explore its capability for selective epitaxial growth. The deposition temperature is 800°C. The effects of the SiF4 addition to SiH4/H2 are discussed. Defects in epitaxial layers resulting from a high composition of the SiF4 during deposition were characterized. Results of in–situ surface cleaning using a SiF4/H2 plasma are also presented.

Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition

1988 ◽  
Vol 52 (13) ◽  
pp. 1053-1055 ◽  
Author(s):  
D. Meakin ◽  
M. Stobbs ◽  
J. Stoemenos ◽  
N. A. Economou
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

Growth and Characterization of Boron-Doped Si1-x-yGexCy Layers Grown by Reduced Pressure Chemical Vapor Deposition

2005 ◽  
Vol 245-246 ◽  
pp. 39-50
Author(s):  
H.H. Radamson ◽  
J. Hållstedt
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reduced Pressure ◽  
Boron Doped ◽  
Pressure Chemical ◽  
Silicon Based

In this paper, the following issues: epitaxial growth, boron incorporation and electrical properties of Si1-x-yGexCy layers grown by reduced pressure chemical vapor deposition (RPCVD) are presented. Furthermore, diffusion of carbon and boron in silicon-based material is also discussed.

scholarly journals Silicon Nitride Films Deposited by Atmospheric Pressure Chemical Vapor Deposition

1997 ◽  
Vol 495 ◽  
Author(s):  
Xian Lin ◽  
Denis Endisch ◽  
Xiaomeng Chen ◽  
Alain Kaloyeros
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Large Scale ◽  
Thin Film Transistor ◽  
Chemical Vapor ◽  
Silicon Nitride Films ◽  
Pressure Chemical ◽  
Scale Integration

ABSTRACTFilms of silicon nitride are widely used in semiconductor technologies for very large scale integration (VLSI), thin film transistor (TFT), and solar cell applications. Current production technologies for silicon nitride use low pressure chemical vapor deposition (LPCVD) at temperatures > 700 °C or plasma enhanced chemical vapor deposition (PECVD) at temperatures below 450 °C. In this report, successful deposition of silicon nitride films by the low temperature thermal atmospheric pressure chemical vapor deposition (APCVD) method is described. Using a novel precursor tetraiodosilane (SiI4), deposition of silicon nitride has been achieved at temperature as low as 400 °C. Data pertaining to the dependence of film properties on deposition temperature are presented, along with a evaluation of the deposition rate, composition, chemical structure, and conformality of the resulting films.

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