scholarly journals Erratum: Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition [Appl. Phys. Lett.52, 1053 (1988)]

1988 ◽  
Vol 52 (17) ◽  
pp. 1389-1391
Author(s):  
D. Meakin ◽  
M. Stobbs ◽  
J. Stoemenos ◽  
N. A. Economou
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition

1988 ◽  
Vol 52 (13) ◽  
pp. 1053-1055 ◽  
Author(s):  
D. Meakin ◽  
M. Stobbs ◽  
J. Stoemenos ◽  
N. A. Economou
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

Epitaxial growth of 3C‐SiC on Si by low‐pressure chemical vapor deposition

1986 ◽  
Vol 49 (7) ◽  
pp. 388-390 ◽  
Author(s):  
Y. Fujiwara ◽  
E. Sakuma ◽  
S. Misawa ◽  
K. Endo ◽  
S. Yoshida
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

Low‐temperature Si/Si1−xGex/Si heterostructure growth at high Ge fractions by low‐pressure chemical vapor deposition

1992 ◽  
Vol 61 (22) ◽  
pp. 2674-2676 ◽  
Author(s):  
Reiner Schütz ◽  
Junichi Murota ◽  
Takahiro Maeda ◽  
Roland Kircher ◽  
Kuniyoshi Yokoo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical
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