Selective epitaxial growth of Ge/Si0.15Ge0.85 quantum wells on Si substrate using reduced pressure chemical vapor deposition

2011 ◽  
Vol 98 (15) ◽  
pp. 151108 ◽  
Author(s):  
Theodore I. Kamins ◽  
James S. Harris ◽  
David A. B. Miller
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Reduced Pressure ◽  
Selective Epitaxial Growth ◽  
Pressure Chemical

Growth and Characterization of Boron-Doped Si1-x-yGexCy Layers Grown by Reduced Pressure Chemical Vapor Deposition

2005 ◽  
Vol 245-246 ◽  
pp. 39-50
Author(s):  
H.H. Radamson ◽  
J. Hållstedt
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reduced Pressure ◽  
Boron Doped ◽  
Pressure Chemical ◽  
Silicon Based

In this paper, the following issues: epitaxial growth, boron incorporation and electrical properties of Si1-x-yGexCy layers grown by reduced pressure chemical vapor deposition (RPCVD) are presented. Furthermore, diffusion of carbon and boron in silicon-based material is also discussed.

Selective Epitaxial Growth of Strained Silicon-Germanium Films in Tubular Hot-Wall Low Pressure Chemical Vapor Deposition Systems

1996 ◽  
Vol 448 ◽  
Author(s):  
I -M. Leet ◽  
W. -C. Wang ◽  
M. T. K. Koh ◽  
J.P. Denton ◽  
E. P. Kvam ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Defect Density ◽  
Low Cost ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Selective Epitaxial Growth ◽  
Pressure Chemical

AbstractSelective epitaxial growth (SEG) of silicon-germanium (SiGe) films on patterned-oxide silicon substrates, using a tubular hot-wall low pressure chemical vapor deposition (LPCVD) system, is demonstrated in this study. This conventional system is proposed as a low cost alternative for SiGe epitaxial growth. Three process improvements needed to achieve quality growth are discussed. First, the hydrogen bake process is modified to eliminate Ge-outgassing. Secondly, a Si SEG buffer layer is deposited prior to SiGe SEG. Finally, a small flow of dichlorosilane is introduced during the temperature ramp-down period prior to SiGe SEG. The growth results are discussed in terms of growth selectivity, thickness uniformity, growth rate, defect density, SiGe film composition, and electrical properties.

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