Diffuse X-Ray Scattering for the Study of Defects in Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
BC Larson ◽  
JF Barhorst
Keyword(s):  
Diffuse Scattering ◽  
Analytical Models ◽  
Size Distributions ◽  
Dislocation Loops ◽  
Crystalline Materials ◽  
X Ray ◽  
Analysis Techniques ◽  
Defect Clusters ◽  
X Ray Scattering

ABSTRACTX-ray diffuse scattering can be used to study the size, concentration, and nature of lattice defects and defect clusters in crystalline materials. The availability of analytical models and detailed numerical calculations for the “Huang” diffuse scattering close to Bragg reflections and the “asymptotic” diffuse scattering at somewhat larger distances from Bragg reflections has made it possible to carry out detailed analyses of the intensity and angular distribution of the diffuse scattering in terms of specific defect parameters. Accordingly, diffuse scattering has been used to study point defects, dislocation loops, and precipitates in metals, semiconductors, and insulators and has provided information on defect geometries, size distributions, and concentrations. In this paper, the theoretical framework necessary for the interpretation of the “Huang” and “asymptotic” diffuse scattering from defect clusters is presented and examples of diffuse scattering calculations for defects in silicon are given. Diffuse scattering from clustered defects in silicon is discussed in terms of the type of information available from this scattering and the relative merits of diffuse scattering as an investigative tool for defect clusters. Diffuse scattering analysis techniques for the determination of separate size distributions for vacancy and interstitial dislocation loops in silicon are presented and applied to diffuse scattering measurements on neutron irradiated silicon. Dislocation loop densities and sizes determined in the as-irradiated state and after thermal anneals are compared with electron microscopy results.

Diffuse x-ray scattering from InGaAs/GaAs quantum dots

2003 ◽  
Vol 799 ◽  
Author(s):  
Rolf Köhler ◽  
Daniil Grigoriev ◽  
Michael Hanke ◽  
Martin Schmidbauer ◽  
Peter Schäfer ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Synchrotron Radiation ◽  
Diffuse Scattering ◽  
Data Evaluation ◽  
X Ray ◽  
X Ray Scattering ◽  
Gaas Matrix ◽  
Wetting Layers ◽  
Ray Scattering

ABSTRACTMulti-fold stacks of In0.6Ga0.4As quantum dots embedded into a GaAs matrix were investigated by means of x-ray diffuse scattering. The measurements were done with synchrotron radiation using different diffraction geometries. Data evaluation was based on comparison with simulated distributions of x-ray diffuse scattering. For the samples under consideration ((001) surface) there is no difference in dot extension along [110] and [-110] and no directional ordering. The measurements easily allow the determination of the average indium amount in the wetting layers. Data evaluation by simulation of x-ray diffuse scattering gives an increase of Incontent from the dot bottom to the dot top.

Characterization of Point Defect Clusters by 2-1/2-D TEM

1975 ◽  
Vol 33 ◽  
pp. 160-161
Author(s):  
B. Mitchell ◽  
W. L. Bell
Keyword(s):  
Point Defect ◽  
Structural Defects ◽  
Size Distributions ◽  
Dislocation Loops ◽  
Number Density ◽  
Crystalline Materials ◽  
Defect Clusters ◽  
Black Spots ◽  
Point Defect Clusters

Many of the TEM studies of radiation damage in crystalline materials have been directed toward illucidating the nature, number density, and size distributions of the primary structural defects resulting from the displacement of atoms from their normal lattice sites, i.e., "black spots." The "black spots" have been identified as either nonresolvable dislocation loops or planar clusters of self interstitials or vacancies by TEM techniques and diffraction contrast theories that are described in the book by Hirsch, et al. and the reviews by Ruhle and Eyre. An indispensable part of the studies of point defect clusters is the identification of their character (vacancy or interstitial).

Diffuse x-ray scattering from InGaAs/GaAs quantum dots

2003 ◽  
Vol 794 ◽  
Author(s):  
Rolf Köhler ◽  
Daniil Grigoriev ◽  
Michael Hanke ◽  
Martin Schmidbauer ◽  
Peter Schäfer ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Synchrotron Radiation ◽  
Diffuse Scattering ◽  
Data Evaluation ◽  
X Ray ◽  
X Ray Scattering ◽  
Gaas Matrix ◽  
Wetting Layers ◽  
Ray Scattering

ABSTRACTMulti-fold stacks of In0.6Ga0.4As quantum dots embedded into a GaAs matrix were investigated by means of x-ray diffuse scattering. The measurements were done with synchrotron radiation using different diffraction geometries. Data evaluation was based on comparison with simulated distributions of x-ray diffuse scattering. For the samples under consideration ((001) surface) there is no difference in dot extension along [110] and [-110] and no directional ordering. The measurements easily allow the determination of the average indium amount in the wetting layers. Data evaluation by simulation of x-ray diffuse scattering gives an increase of Incontent from the dot bottom to the dot top.

Determination of the thermodynamic factor for the B2 FeAl phase from X-ray diffuse scattering data

1998 ◽  
Vol 527 ◽  
Author(s):  
Vlad Liubich ◽  
Simon Dorfman ◽  
David Fuks ◽  
Helmut Mehrert
Keyword(s):  
Interdiffusion Coefficient ◽  
Order Parameter ◽  
Diffuse Scattering ◽  
Al Alloys ◽  
Scattering Data ◽  
Thermodynamic Factor ◽  
X Ray ◽  
X Ray Scattering ◽  
Feal Phase

ABSTRACTThe interdiffusion coefficient is related via the modified Darken equation to the tracer diffusivities of the constituents. The thermodynamic factor Φ entering the Darken equation for the interdiffusion coefficient is expressed in terms of the energy parameters which describe the ordering process in the binary alloy. Our calculations for Fe-Al alloys yield the dependence of Φ on the long-range order parameter. These calculations are performed with the parameters extracted from diffuse X-ray scattering data on FeAl.

Diffuse x-ray scattering from InGaAs/GaAs quantum dots

2003 ◽  
Vol 789 ◽  
Author(s):  
Rolf Köhler ◽  
Daniil Grigoriev ◽  
Michael Hanke ◽  
Martin Schmidbauer ◽  
Peter Schäfer ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Synchrotron Radiation ◽  
Diffuse Scattering ◽  
Data Evaluation ◽  
X Ray ◽  
X Ray Scattering ◽  
Gaas Matrix ◽  
Wetting Layers ◽  
Ray Scattering

ABSTRACTMulti-fold stacks of In0.6Ga0.4As quantum dots embedded into a GaAs matrix were investigated by means of x-ray diffuse scattering. The measurements were done with synchrotron radiation using different diffraction geometries. Data evaluation was based on comparison with simulated distributions of x-ray diffuse scattering. For the samples under consideration ((001) surface) there is no difference in dot extension along [110] and [-110] and no directional ordering. The measurements easily allow the determination of the average indium amount in the wetting layers. Data evaluation by simulation of x-ray diffuse scattering gives an increase of Incontent from the dot bottom to the dot top.

Evolution of Interfacial Roughness Correlations of Fe Au Films Grown on Mgo(001) Substrates

1996 ◽  
Vol 440 ◽  
Author(s):  
P. C. Chow ◽  
R. Paniago ◽  
R. Forrest ◽  
S. C. Moss ◽  
S. S. P. Parkin ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffuse Scattering ◽  
Perfect Match ◽  
Grazing Incidence ◽  
Interface Roughness ◽  
Metallic Structures ◽  
X Ray ◽  
Dimensional Image ◽  
X Ray Scattering ◽  
Image Plate Detector

AbstractThe growth by sputtering of a series of thin films of Fe/Au on MgO(001) substrates was analyzed using Bragg and diffuse X-ray scattering. The Fe (bcc) layer grows rotated by 45° with respect to the MgO – Au(fcc) (001) epitaxial orientation, resulting in an almost perfect match between the two metallic structures. By collecting the X-ray diffuse scattering under grazing incidence using a 2-dimensional image plate detector, we mapped the reciprocal space of these films. We characterized the correlated interface roughness starting with a buffer of Fe in which only three interfaces are present. The propagation of the roughness was subsequently characterized for Fe/Au multilayers with 40 and 100 bilayers. We observe an enlargement of the surface features as a function of time, evidenced by the longer lateral cutoff length measured for thicker films.

Determination of the Growth Rate of Hydrothermally Synthesised ZnO2 Crystallites

2017 ◽  
Vol 50 ◽  
pp. 41-47 ◽  
Author(s):  
Martin Egblewogbe ◽  
Garu Gebreyesus ◽  
Samuel A. Atarah
Keyword(s):  
Growth Rate ◽  
Zinc Acetate Dihydrate ◽  
Hydrothermal Process ◽  
Growth Rate Constant ◽  
Acetate Dihydrate ◽  
X Ray ◽  
X Ray Scattering ◽  
Transmission Electron ◽  
Zinc Peroxide

Powders consisting of nanoparticles of zinc peroxide were prepared via a simple hydrothermal process using zinc acetate dihydrate and hydrogen peroxide precursors. The size of the crystallites was determined using x-ray powder diffraction. Over a period of 5 hours the crystallite radius increased from 4 nm – 9 nm at a temperature of 68 °C ± 5 °C, with growth rate constant of 0.23 nm3 min−1 calculated using the Lifshitz, Slyozov, and Wagner model. The powders were further characterised with High Resolution Transmission Electron Microscopy, Energy Dispersive X-ray analysis, and Small Angle X-ray Scattering, showing well-crystallised ZnO2 nanoparticles.

A New X-Ray Scattering Method for Determining Pore-Size Distribution in Low-k Thin Films

2001 ◽  
Vol 714 ◽  
Author(s):  
Kazuhiko Omote ◽  
Shigeru Kawamura
Keyword(s):  
Thin Films ◽  
Pore Size Distribution ◽  
Pore Size ◽  
Gas Adsorption ◽  
Size Distributions ◽  
X Ray ◽  
X Ray Scattering ◽  
Pore Size Distributions ◽  
Scattering Technique ◽  
Ray Scattering

ABSTRACTWe have successively developed a new x-ray scattering technique for a non-destructive determination of pore-size distributions in porous low-κ thin films formed on thick substrates. The pore size distribution in a film is derived from x-ray diffuse scattering data, which are measured using offset θ/2θ scans to avoid strong specular reflections from the film surface and its substrate. Γ-distribution mode for the pores in the film is used in the calculation. The average diameter and the dispersion parameter of the Γ-distribution function are varied and refined by computer so that the calculated scattering pattern best matches to the experimental pattern. The technique has been used to analyze porous methyl silsesquioxane (MSQ) films. The pore size distributions determined by the x-ray scattering technique agree with that of the commonly used gas adsorption technique. The x-ray technique has been also used successfully determine small pores less than one nanometer in diameter, which is well below the lowest limit of the gas adsorption technique.

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