Conduction Mechanisms in Discontinuous Copper Films

1990 ◽  
Vol 195 ◽  
Author(s):  
P. BiegaŃski ◽  
E. Mozrzymas-Dobierzewska
Keyword(s):  
Activation Energy ◽  
Copper Films ◽  
Cu Films ◽  
Glass Substrates ◽  
Conduction Mechanisms ◽  
Temperature Dependences

ABSTRACTCopper films of coverage coefficients ranging between 0.2 and 1 were evaporated onto glass substrates under vacuum conditions (p ≃ 10−8 Torr). For these films, the temperature dependences of resistance were measured in vacuo in situ. Making use of the obtained data TCR values, as a function of coverage coefficient and the activation energy for the films with different coverage coefficients were established. The resistance of films was found to change, and TCR values approaching zero for coverage coefficients between 0.63 and 0.75. This interval (∆qc) can be regarded as the percolation interval for discontinuous Cu films.

In-Situ Tem Investigation During Thermal Cycling of thin Copper Films

1996 ◽  
Vol 436 ◽  
Author(s):  
R.-M. Keller ◽  
W. Sigle ◽  
S. P. Baker ◽  
O. Kraft ◽  
E. Arzt
Keyword(s):  
Grain Growth ◽  
Room Temperature ◽  
Dislocation Motion ◽  
In Situ Tem ◽  
Copper Films ◽  
Stress Evolution ◽  
Cu Films ◽  
Transmission Electron ◽  
Insight Into

AbstractIn-situ transmission electron microscopy (TEM) was performed to study grain growth and dislocation motion during temperature cycles of Cu films with and without a cap layer. In addition, the substrate curvature method was employed to determine the corresponding stresstemperature curves from room temperature up to 600°C. The results of the in-situ TEM investigations provide insight into the microstructural evolution which occurs during the stress measurements. Grain growth occurred continuously throughout the first heating cycle in both cases. The evolution of dislocation structure observed in TEM supports an explanation of the stress evolution in both capped and uncapped films in terms of dislocation effects.

THE ADHESION OF COPPER FILMS COATED ON SILICON AND GLASS SUBSTRATES

2000 ◽  
Vol 14 (03) ◽  
pp. 103-108 ◽  
Author(s):  
M. CHEN ◽  
J. GAO
Keyword(s):  
Vickers Microhardness ◽  
Deformation Mode ◽  
Copper Films ◽  
Micro Hardness ◽  
Adhesion Properties ◽  
Cu Films ◽  
Glass Substrates ◽  
Hardness Model ◽  
Composite Hardness ◽  
Hard Substrates

A new method is developed to evaluate the adhesion properties of thin films. This method is based on a composite hardness model. In our experiments, Cu films which were deposited on Si and glass substrates by pulsed laser ablation were indented and scratched by a Vickers microhardness tester and a diamond cutter, respectively. It was found that adhesion influenced the micro-hardness of films for soft films deposited on hard substrates. This result was explained by the elastic–plastic deformation mode of indentation.

Influence of Thickness and Substrate on the Transient Reflectivity of Copper Films

2011 ◽  
Vol 464 ◽  
pp. 672-676
Author(s):  
Nai Fei Ren ◽  
Rong Xiao Wang ◽  
Jia Fang Gu ◽  
Jian Qing Ren
Keyword(s):  
Thermal Equilibrium ◽  
Laser Power ◽  
Copper Films ◽  
Pump Probe ◽  
Reflectivity Curve ◽  
Cu Films ◽  
Glass Substrates ◽  
20 Nm ◽  
K9 Glass ◽  
Peak Value

Cu films were deposited on Si and K9 glass substrates by magnetron sputtering technique. The influences of varying thicknesses and substrates on the transient reflectivity of Cu films were studied by using femtosecond laser pump-probe technology. The results show that the transient reflectivity curve of Cu films in different thicknesses have the same trend except that when they reach the peak value and recover to the balance. When the laser power is 40 mW, the influence of Si and K9 substrates on the transient reflectivity curve of 20 nm Cu films is relatively small. But when the laser power is160 mW, the influence of Si and K9 substrates on the transient reflectivity curve of 20 nm Cu films have obvious difference, the former needs much less time to reach the thermal equilibrium than of the later. At the same time, the influence of different substrates on the transient reflectivity curve of 200 nm Cu is also small.

scholarly journals The Oxidation Kinetics of Thin Copper Films Studied by Resistivity Measurements

1999 ◽  
Vol 54 (2) ◽  
pp. 117-123 ◽  
Author(s):  
M. Rauh ◽  
H.-U. Finzel ◽  
P. Wißmann
Keyword(s):  
Linear Time ◽  
Metal Films ◽  
Pure Oxygen ◽  
Copper Films ◽  
Kinetics Of Oxidation ◽  
Resistivity Measurements ◽  
Glass Substrates ◽  
Kinetics Of ◽  
Potential Diffusion

Abstract Resistivity measurements on thin metal films allow to study the kinetics of oxidation. The method is applied to 50 - 60 nm thick copper films deposited on glass substrates under UHV conditions. After annealing at 150°C, the films are exposed to pure oxygen at various temperatures in the range 85 -135°C, and the electrical resistivity is recorded in situ. At these temperatures, the oxygen begins to penetrate into the interior of the films, which results in a relatively steep increase in the film resistivity. A linear time law is valid to good approximation, which can be attributed to the influence of the dissociation of an adsorbed molecular species of oxygen on the reaction velocity. A potential diffusion of oxygen in the grain boundaries is also discussed.

Effect of Hydrogen on Thin Cu/Ti and Cu Films

1991 ◽  
Vol 239 ◽  
Author(s):  
Christopher A. Apblett ◽  
Peter J. Ficalora
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Stress State ◽  
Experimental Evidence ◽  
Stress Change ◽  
Compound Formation ◽  
Cu Films ◽  
Instantaneous Change ◽  
Single Compound

ABSTRACTThin films of Cu and Cu on Ti were prepared by sputtering films onto SiO2 substrates. The films were annealed at temperatures between 350 and 400°C in vacuum and hydrogen ambiente. The stress was measured in-situ during the anneals. The stress in vacuum initially was compressive, then became tensile and remained so. The stress in hydrogen started in compression and remained so throughout the anneal. The origin of these stresses is explained as a result of compound formation. In vacuum anneals, TiCu forms during the compressive stage with an activation energy of 1.7 eV, then TiCu3 forms during the tensile stage with an activation energy of 2.5 eV. In hydrogen, a single compound, TiH2, forms under the Cu with an activation energy of 0.93 eV.Studies on the Cu films indicate that hydrogen reduces the incremental stress formed in the films during annealing. A possible explanation is presented for the stress change in that hydrogen has been shown to assist in annealing dislocations. Experimental evidence of an instantaneous change in the stress state upon the introduction of a new ambient is also presented.

Deposition and Crystallisation Behaviour of Amorphous Silicon Thin Films Obtained by Pyrolysis of Disilane Gas at Very Low Pressure

1994 ◽  
Vol 345 ◽  
Author(s):  
T. Kretz ◽  
D. Pribat ◽  
P. Legagneux ◽  
F. Plais ◽  
O. Huet ◽  
...  
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Electrical Conductance ◽  
Chemical Vapor ◽  
Crystalline Fraction ◽  
Silicon Thin Films ◽  
Crystallisation Behaviour

AbstractHigh purity amorphous silicon layers were obtained by ultrahigh vacuum (millitorr range) chemical vapor deposition (UHVCVD) from disilane gas. The crystalline fraction of the films was monitored by in situ electrical conductance measurements performed during isothermal annealings. The experimental conductance curves were fitted with an analytical expression, from which the characteristic crystallisation time, tc, was extracted. Using the activation energy for the growth rate extracted from our previous work, we were able to determine the activation energy for the nucleation rate for the analysed-films. For the films including small crystallites we have obtained En ∼ 2.8 eV, compared to En ∼ 3.7 eV for the completely amorphous ones.

A NEW ORGANIC/INORGANIC HYBRID WITH HIGH ELECTRORHEOLOGICAL ACTIVITY

2002 ◽  
Vol 16 (17n18) ◽  
pp. 2454-2460 ◽  
Author(s):  
X. P. ZHAO ◽  
X. DUAN
Keyword(s):  
Activation Energy ◽  
Shear Stress ◽  
Necessary Conditions ◽  
Sol Gel ◽  
Root Temperature ◽  
Sedimentation Stability ◽  
Inorganic Hybrid ◽  
Active Particles ◽  
Static Shear

In-situ sol-gel method to prepare colloidal hybrids of surfactant modified polysucchride and titanium oxide has been presented, and experiments indicated these highly ER active particles exhibited a remarkable ER effect. The static shear stress can be up to 37 k Pa (shear rate 5 S -1) under DC field of 4 kV/mm at root temperature, well above that of simple blends of starch and TiO 2. In the meanwhile, temperature dependence and sedimentation stability were also greatly improved. Based on recent experimental facts, we find that dielectric properties and surface (interface) activity are two necessary conditions fulfilling the requirement of high ER activity. Adequate grinding of particles with oil can effectively enhance the shear stress, which may be owed to the decline of the activation energy needed for restructuring. It has provided us a new horizon for preparation of excellent ER materials and further studies should be continued to make.

Crystallization of Amorphous Silicon-Aluminum thin Films: IN-SITU Observation and Thermal Analysis.

1991 ◽  
Vol 237 ◽  
Author(s):  
Toyohiko J. Konno ◽  
Robert Sinclair
Keyword(s):  
Activation Energy ◽  
Amorphous Alloys ◽  
Amorphous Matrix ◽  
In Situ Observation ◽  
Scanning Calorimetry ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Higher Temperature ◽  
Sputter Deposited

ABSTRACTThe crystallization of sputter-deposited Si/Al amorphous alloys was examined by transmission electron microscopy (TEM) and differential scanning calorimetry (DSC). In-situ high-resolution TEM reveals the existence of an Al layer between the amorphous matrix and the growing crystalline phase. The activation energy for the growth is about 1.2eV, roughly corresponding to the activation energy of Si diffusion in Al. These two observations support the view that a crystallization mechanism, in which an Al buffer layer provides the shortest reaction path, is responsible for the reaction. The product microstructure exhibits secondary crystallization at a higher temperature.

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