P‐46: Fabrication and characterization of thick Cu films deposited on G8.5 LCD glass substrates for 8k and large TV panels

2020 ◽  
Vol 51 (1) ◽  
pp. 1519-1522
Author(s):  
Guo Li ◽  
Xia Hui ◽  
Tan Zhiwei ◽  
Xiao Juncheng ◽  
Zhou Hang
2013 ◽  
Vol 52 (10S) ◽  
pp. 10MB17 ◽  
Author(s):  
Hyung Soo Kim ◽  
Jung Wook Lim ◽  
Sun Jin Yun ◽  
Min A Park ◽  
Se Yong Park ◽  
...  

2014 ◽  
Vol 1633 ◽  
pp. 95-100
Author(s):  
Forough Mahmoudabadi ◽  
Ta-Ko Chuang ◽  
Jerry Ho Kung ◽  
Miltiadis K. Hatalis

ABSTRACTIn this paper, we present fabrication and characterization of RF sputtered a-IGZO TFTs having a modified etch stopper structure with source/drain contact windows on glass wafers. The effect of annealing time and channel length on device performance in terms of mobility, on/off current ratio, average off current, threshold voltage, and sub threshold slope is reported.


2014 ◽  
Vol 970 ◽  
pp. 102-105
Author(s):  
Jian Wei Hoon ◽  
Kah Yoong Chan ◽  
Cheng Yang Low

In this work, silicon dioxide (SiO2) films were fabricated on indium tin oxide (ITO) coated glass substrates by radio frequency (RF) magnetron sputtering deposition technique. The deposition rate of the magnetron sputtered SiO2 films was investigated. The SiO2 films were characterized with the atomic force microscopy (AFM) for their surface topology. In addition, the electrical insulating strength of the magnetron sputtered SiO2 was examined.


2019 ◽  
Vol 560 ◽  
pp. 204-207 ◽  
Author(s):  
Khalid Mehmood Ur Rehman ◽  
Xiansong Liu ◽  
Muhammad Riaz ◽  
Yujie Yang ◽  
Shuangjiu Feng ◽  
...  

2010 ◽  
Vol 94 (7) ◽  
pp. 1247-1253 ◽  
Author(s):  
Abel Santos ◽  
Pilar Formentín ◽  
Josep Pallarés ◽  
Josep Ferré-Borrull ◽  
Lluís F. Marsal

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