Effect of Hydrogen on Thin Cu/Ti and Cu Films

1991 ◽  
Vol 239 ◽  
Author(s):  
Christopher A. Apblett ◽  
Peter J. Ficalora
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Stress State ◽  
Experimental Evidence ◽  
Stress Change ◽  
Compound Formation ◽  
Cu Films ◽  
Instantaneous Change ◽  
Single Compound

ABSTRACTThin films of Cu and Cu on Ti were prepared by sputtering films onto SiO2 substrates. The films were annealed at temperatures between 350 and 400°C in vacuum and hydrogen ambiente. The stress was measured in-situ during the anneals. The stress in vacuum initially was compressive, then became tensile and remained so. The stress in hydrogen started in compression and remained so throughout the anneal. The origin of these stresses is explained as a result of compound formation. In vacuum anneals, TiCu forms during the compressive stage with an activation energy of 1.7 eV, then TiCu3 forms during the tensile stage with an activation energy of 2.5 eV. In hydrogen, a single compound, TiH2, forms under the Cu with an activation energy of 0.93 eV.Studies on the Cu films indicate that hydrogen reduces the incremental stress formed in the films during annealing. A possible explanation is presented for the stress change in that hydrogen has been shown to assist in annealing dislocations. Experimental evidence of an instantaneous change in the stress state upon the introduction of a new ambient is also presented.

Conduction Mechanisms in Discontinuous Copper Films

1990 ◽  
Vol 195 ◽  
Author(s):  
P. BiegaŃski ◽  
E. Mozrzymas-Dobierzewska
Keyword(s):  
Activation Energy ◽  
Copper Films ◽  
Cu Films ◽  
Glass Substrates ◽  
Conduction Mechanisms ◽  
Temperature Dependences

ABSTRACTCopper films of coverage coefficients ranging between 0.2 and 1 were evaporated onto glass substrates under vacuum conditions (p ≃ 10−8 Torr). For these films, the temperature dependences of resistance were measured in vacuo in situ. Making use of the obtained data TCR values, as a function of coverage coefficient and the activation energy for the films with different coverage coefficients were established. The resistance of films was found to change, and TCR values approaching zero for coverage coefficients between 0.63 and 0.75. This interval (∆qc) can be regarded as the percolation interval for discontinuous Cu films.

Phase Formation in Cu(Sn) Alloy Thin Films

1996 ◽  
Vol 427 ◽  
Author(s):  
L. A. Clevenger ◽  
B. Arcot ◽  
W. Ziegler ◽  
E. G. Colgan ◽  
Q. Z. Hong ◽  
...  
Keyword(s):  
Thin Films ◽  
Intermetallic Phase ◽  
Electron Beam Evaporation ◽  
Film Structure ◽  
Film Deposition ◽  
Atomic Percent ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cu Films

AbstractThe interdiffusion of Cu and Sn and the formation and dissolution of Cu-Sn precipitate phases have been examined for Cu(Sn) alloy thin films. Cu(Sn) films were deposited by electron beam evaporation in either a Sn/Cu bilayer or Cu/Sn/Cu trilayer film structure, with overall Sn concentrations from 0.1 to 5 atomic percent. Analysis by in situ resistivity, calorimetry, electron diffraction and x-ray diffraction measurements indicates that the bilayer and trilayer films form the intermetallic phase η-Cu6 Sn5 during film deposition. Upon heating, the ε-Cu3Sn phase forms at 170°C, then this phase dissolves into the Cu matrix at approximately 350°C. Finally, ζ- Cu10Sn3 phase forms and precipitates after heating to 500°C and cooling to room temperature. The final resistivity of Cu/Sn/Cu films with more than 2 atomic percent Sn was greater than 3.5 μΩ - cm. However, resistivities from 1.9 to 2.5 μΩ - cm after annealing were obtained with Cu/Sn/Cu films containing less than 2 atomic percent Sn.

Fabrication of High Quality Poly-Si From Fluorinated Precursors

1993 ◽  
Vol 297 ◽  
Author(s):  
Shin-Ichi Ishihara ◽  
Deyan He ◽  
Tetsuya Akasaka ◽  
Yuzoh Araki ◽  
Isamu Shimizu
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Conductivity ◽  
Thin Layer ◽  
Atomic Hydrogen ◽  
Solid Phase ◽  
Chemical Interaction ◽  
In Situ Observation ◽  
High Quality

Poly-Si thin films with grains 100–200 nm in dia. showing a highly ordered texture were grown from fluorinated precursors, SiFnHm (n+m=3), on a glass substrate at 300–400 °C with the aid of atomic hydrogen. According to the in situ observation by ellipsometry, the reconstruction was undergone in a solid phase stimulated by impinging atomic hydrogens within a thin layer of about 10 nm thick owing to the strong chemical interaction of the pair of H and F in Si-network. Both H and F were released efficiently from the network to the levels of 2 × 1020 cm−3 and (2−5) × 1019 cm−3, respectively. Dangling bonds were also efficiently passivated down to 4 × 1016 cm−3 with hydrogens diffused through the network. P-doped films showing electrical conductivity of 10−2 S/cm (300 °K) with the activation energy of 0.24 eV was obtained by alternately repeating the deposition of thin layer and the treatment with atomic hydrogens.

Stress Relaxation in Al-Si-Cu Thin Films and Lines

1994 ◽  
Vol 356 ◽  
Author(s):  
A. Witvrouw ◽  
J. Proost ◽  
B. Deweerdt ◽  
Ph. Roussel ◽  
K. Maex
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Flow Stress ◽  
Stress Relaxation ◽  
Relaxation Data ◽  
Cu Films ◽  
Dislocation Glide ◽  
Average Activation Energy ◽  
Curvature Measurements ◽  
Substrate Curvature

AbstractSubstrate curvature measurements were used to study stress relaxation in Al-Si-Cu films at temperatures between 45 and 165 °C. Dislocation glide with an average activation energy, resp. athermal flow stress of 1.7 ± 0.2 eV, resp. 600 ± 200 MPa could describe the relaxation data for temperatures up to 120 °C well. Stress relaxation at 92 °C was found to progress much slower in 1 μm wide nitride passivated lines than in thin films or unpassivated lines.

scholarly journals Crystallization of HfO2 thin films and their influence on laser induced damage

2020 ◽  
Vol 238 ◽  
pp. 12004
Author(s):  
Zoltán Balogh-Michels ◽  
Igor Stevanovic ◽  
Ruggero Frison ◽  
Andreas Bächli ◽  
Daniel Schachtler ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Laser Irradiation ◽  
Coated Sample ◽  
Two Dimensional ◽  
In Situ Xrd ◽  
Laser Induced Damage ◽  
Irradiation Resistance

We present our investigation on the crystallization of IBS HfO2 on (0001) SiO2. The crystallization was studied by in-situ XRD. The activation energy was 2.6±0.5 eV. The growth follows a two-dimensional mode. LIDT measurements (5000-on-1) with 10 ns pulses at 355 nm on 3QWT HfO2 layers shows that the crystallization leads to increase of the laser irradiation resistance. The 0%-LIDT of the as coated sample was 3.1 J/cm2 and increased to 3.7 J/cm2 after 5h @ 500°C.

scholarly journals In situ monitoring of stress change in GeTe thin films during thermal annealing and crystallization

2018 ◽  
Vol 1 ◽  
pp. 63-67 ◽  
Author(s):  
B. Ben Yahia ◽  
M.S. Amara ◽  
M. Gallard ◽  
N. Burle ◽  
S. Escoubas ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Stress Change ◽  
In Situ Monitoring

Synthesis and Oxidation Kinetics of Sol-Gel and Sputtered Tantalum Nitride Thin Films

1995 ◽  
Vol 410 ◽  
Author(s):  
Gerald T. Kraus ◽  
Cory S. Oldweiler ◽  
Emmanuel P. Giannelis
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Oxidation Kinetics ◽  
Sol Gel ◽  
Tantalum Nitride ◽  
Sputtered Films ◽  
Parabolic Oxidation ◽  
Sol Gel Films ◽  
Kinetics Of

ABSTRACTTantalum nitride thin films were produced by nitridation of sol-gel tantala thin films. The oxidation kinetics and the activation energy for oxidation were investigated and compared to those of sputtered tantalum nitride thin films. Data was gathered from in situ sheet resistance measurements taken between 550 and 720 K. Sol-gel films exhibited parabolic oxidation kinetics and had an activation energy of 1.9 eV. Sputtered films displayed quartic oxidation kinetics at lower temperatures tending toward cubic kinetics at higher temperatures and had an activation energy of 1.6 eV.

In situ TEM Observations of Grain Growth in Nanograined Thin Films

2004 ◽  
Vol 854 ◽  
Author(s):  
K. Hattar ◽  
J. Gregg ◽  
J. Han ◽  
T. Saif ◽  
I. M. Robertson
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Elevated Temperatures ◽  
Critical Role ◽  
Grain Structure ◽  
In Situ Tem ◽  
Free Standing ◽  
Transmission Electron Microscopy Analysis ◽  
Cu Films

ABSTRACTIn situ transmission electron microscopy analysis is used to study the stability of nanograined and ultra-fine grained thin films at elevated temperatures. In the free-standing Au and Cu films, grain growth was dependent on annealing temperature and time with growth observed in both materials at temperatures greater than 373K. Both materials exhibited abnormal grain growth although it was more prevalent in Au than in Cu, which may be a consequence of pinning of the Cu grain boundaries by impurities. The formation and destruction of twins was observed to play a critical role in the grain growth, with the twins retarding the growth in gold, but not in Cu. In constrained Au films no grain growth was observed on annealing at temperatures below 636 K. At 636 K, the eutectic temperature, the microstructure transformed to the eutectic structure with the first stage being the annihilation of the grain structure.

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