Processing of Silicon Wafers Followed by Microwave Photoconductivity Measurements

1990 ◽  
Vol 189 ◽  
Author(s):  
A. Sanders ◽  
H. Wetzel ◽  
M. Kunst
Keyword(s):  
Quality Control ◽  
Process Control ◽  
Crystalline Silicon ◽  
Electronic Devices ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Time Resolved ◽  
Transient Photoconductivity

ABSTRACTThe characterization of single crystalline silicon wafers for application in (opto)electronic devices by transient photoconductivity measurements is investigated. To this aim is the transient photoconductivity in Si wafers after different treatments determined by the Time Resolved Microwave Conductivity ( TRMC ) method. This technique is non-evasive and contactless and so in-situ measurements are possible. Application of TRMC measurements for process control and quality control of relevant process steps in the production of (opto)electronic devices is discussed in view of the experimental results presented.

In-Situ Quality Control of the Production of Semiconductor Devices by Microwave Photoconductivity Measurements

1992 ◽  
Vol 269 ◽  
Author(s):  
C. Swiatkowski ◽  
A. Sanders ◽  
M. Kunst ◽  
G. Seidelmann ◽  
C. Haffer ◽  
...  
Keyword(s):  
Quality Control ◽  
Amorphous Silicon ◽  
Semiconductor Devices ◽  
Microwave Frequency ◽  
Point Of View ◽  
General Point ◽  
Frequency Range ◽  
Transient Photoconductivity

ABSTRACTThe application of transient photoconductivity measurements in the microwave frequency range to the characterization of semiconductors and semiconductor devices is analyzed. Quality control and in-situ optimization are discussed from a more general point of view and as a concrete example the optimization of the deposition of amorphous silicon films is presented.

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

scholarly journals Optical Properties of Spin-Coated TiO2Antireflection Films on Textured Single-Crystalline Silicon Substrates

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Ryosuke Watanabe ◽  
Yohei Eguchi ◽  
Takuya Yamada ◽  
Yoji Saito
Keyword(s):  
Optical Properties ◽  
Crystalline Silicon ◽  
Low Cost ◽  
Incident Light ◽  
Antireflection Coating ◽  
Silicon Wafers ◽  
Reflectance Spectra ◽  
Visible Range ◽  
Single Crystalline Silicon ◽  
Single Crystalline

Antireflection coating (ARC) prepared by a wet process is beneficial for low cost fabrication of photovoltaic cells. In this study, we investigated optical properties and morphologies of spin-coated TiO2ARCs on alkaline textured single-crystalline silicon wafers. Reflectance spectra of the spin-coated ARCs on alkaline textured silicon wafers exhibit no interferences and low reflectance values in the entire visible range. We modeled the structures of the spin-coated films for ray tracing numerical calculation and compared numerically calculated reflectance spectra with the experimental results. This is the first report to clarify the novel optical properties experimentally and theoretically. Optical properties of the spin-coated ARCs without interference are due to the fractional nonuniformity of the thickness of the spin-coated ARCs that cancels out the interference of the incident light.

scholarly journals Characterization of Growing Dendrites in CrMnFeCoNi High-Entropy Alloy by Time-Resolved and In-Situ Tomography

2020 ◽  
Vol 61 (4) ◽  
pp. 596-604 ◽  
Author(s):  
Keita Nakano ◽  
Taka Narumi ◽  
Kohei Morishita ◽  
Hideyuki Yasuda
Keyword(s):  
High Entropy Alloy ◽  
Time Resolved ◽  
High Entropy

Time-resolved laser spectroscopy for the in situ characterization of methacrylate monomer flow within spruce

2016 ◽  
Vol 51 (2) ◽  
pp. 227-242 ◽  
Author(s):  
Emma-Rose Janeček ◽  
Zarah Walsh-Korb ◽  
Ilaria Bargigia ◽  
Andrea Farina ◽  
Michael H. Ramage ◽  
...  
Keyword(s):  
Laser Spectroscopy ◽  
In Situ Characterization ◽  
Time Resolved ◽  
Methacrylate Monomer

Material Characterization by Contactless Photoconductivity Measurements

1986 ◽  
Vol 69 ◽  
Author(s):  
M. Kunst ◽  
A. Werner
Keyword(s):  
Crystalline Silicon ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Transient Photoconductivity ◽  
Different Types ◽  
Intimate Relation ◽  
Hydrogenated Amorphous ◽  
Excellent Tool

AbstractTransient photoconductivity measurements with the time-resolved microwave conductivity (TRMC) method have been applied to three different types of semiconductors: hydrogenated amorphous silicon, single crystalline silicon and GaAs/GaAlAs multiple quantum well structures. Analysis of the signals in terms of charge carrier-lattice interaction points to an intimate relation between TRMC signals and intrinsic material properties. It is shown that the TRMC-technique is an excellent tool to characterize photosensitive materials.

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