Mechanical Properties of Compositionally Modulated Au-Ni thin films using Indentation and Microbeam Deflection Techniques

1990 ◽  
Vol 188 ◽  
Author(s):  
Shefford P. Baker ◽  
Alan F. Jankowski ◽  
Soonil Hong ◽  
William D. Nix

ABSTRACTThe “supermodulus effect” has been reported as an anomalous increase of as much as several hundred percent in the elastic moduli of compositionally-modulated thin metal films in a narrow range of modulation wavelength. The direct measurement of this effect has, however, been limited due to the very small dimensions of the test material. The mechanical properties of compositionally-modulated Au-Ni thin films (one of the first systems in which the supermodulus effect was reported) were studied on their substrates by indentation and microbeam-deflection techniques using a Nanoindenter. The films were fabricated by alternately sputtering Au and Ni onto [100] Si substrates for the indentation tests and onto prefabricated SiO2 cantilever beams with an initial Cr layer (for adhesion) for the beam deflection tests. All of the films have strong [111] textures and exhibit the structural characteristics of the films for which the modulus enhancement was reported. In particular, an increase in the average lattice parameter normal to the plane of the film over a narrow range of modulation wavelengths near 2 nm was noted. The modulation wavelengths range from 0.8 to 4.5 nm. The results from both indentation and microbeam deflection tests reveal no unusual plastic or elastic properties in these samples.

1994 ◽  
Vol 343 ◽  
Author(s):  
Shefford P. Baker ◽  
James A. Bain ◽  
Bruce M. Clemens ◽  
William D. Nix

ABSTRACTSeveral characteristics of compositionally-modulated Au-Ni thin films have been observed to vary with composition wavelength for wavelengths between 0.9 and 4.0 nm. The average lattice parameter normal to the film plane displays a maximum, the elastic stiffness shows a minimum and the substrate interaction stress in the film goes through a compressive peak in this regime. These variations are all consistent with a model in which deviations from bulk behavior are confined to the interfaces in the material. In this paper, we present the results of microstructural analyses of these films. Symmetric and asymmetric θ–2θ x-ray diffraction scans were conducted with scattering vectors oriented at a variety of angles to the film normal. Rocking curve analyses were also conducted. Features arising from the composition modulation in symmetric scans are quite sharp. However, asymmetric scans and rocking curves indicate that these films have a relatively poor {111} texture. Data from all scans provide clear evidence that Au intermixes preferentially into Ni. These results are supported by computer simulations of the diffraction spectra and the results of electron-image and -diffraction analyses. These measurements provide a consistent explanation for the mechanical properties of these films.


2007 ◽  
Vol 1049 ◽  
Author(s):  
Jayadeep Deva Reddy ◽  
Alex A. Volinsky ◽  
Christopher L. Frewin ◽  
Chris Locke ◽  
Stephen E. Saddow

AbstractThere is a technological need for hard thin films with high elastic modulus and fracture toughness. Silicon carbide (SiC) fulfills such requirements for a variety of applications at high temperatures and for high-wear MEMS. A detailed study of the mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si substrates was performed by means of nanoindentation using a Berkovich diamond tip. The thickness of both the single and polycrystalline SiC films was around 1-2 μm. Under indentation loads below 500 μN both films exhibit Hertzian elastic contact without plastic deformation. The polycrystalline SiC films have an elastic modulus of 457 GPa and hardness of 33.5 GPa, while the single crystalline SiC films elastic modulus and hardness were measured to be 433 GPa and 31.2 GPa, respectively. These results indicate that polycrystalline SiC thin films are more attractive for MEMS applications when compared with the single crystal 3C-SiC, which is promising since growing single crystal 3C-SiC films is more challenging.


2012 ◽  
Vol 531 ◽  
pp. 3-6
Author(s):  
C.L. Zhong ◽  
L.E. Luo

A series of Cr1-xAlxN coatings were deposited by reactive magnetron sputtering. The content, microstructure and the hardness of the thin films were characterized respectively with energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) and nanoindentor. The effect of Al content on the microstructure and hardness was studied. It was found that Cr1-xAlxN compound coating exhibits a cubic structure with (1 1 1) preferred orientations and that the lattice parameter of Cr1-xAlxN coatings decrease with the increase of Al content. The hardness of Cr1-xAlxN compound coating is higher than that of CrN and increases with the increase of Al content.


2001 ◽  
Vol 666 ◽  
Author(s):  
Woo-Chul Yi ◽  
T. S. Kalkur ◽  
Elliott Philofsky ◽  
Lee Kammerdiner

ABSTRACTBa1−xCaxTi1-yZryO3 materials have very high dielectric constant (up to 30,000) in the bulk form. In this paper, we are presenting the electrical and structural characteristics of undoped and 0.4% Mg-doped Ba0.96Ca0.04Ti0.84Zr0.16O3 (BCTZ) thin films on Pt/Ti/SiO2/Si substrates. The BCTZ films were deposited by spin on metal-organic decomposition method and annealed at a temperature 600-900°C in oxygen environment. The annealed thin films were characterized by X-ray diffraction. The electrical characteristics of the annealed thin films were analyzed by capacitance–voltage and current–voltage measurements. The as-annealed thin films were post- annealed in nitrogen and oxygen environments and the effect of post-annealing on their electrical characteristics were also presented in conjunction with 0.4% Mg doping effect of BCTZ thin films for possible high dielectric constant material applications.


2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Shiwen Du ◽  
Yongtang Li

Cu thin films were deposited on Si substrates using direct current (DC) magnetron sputtering. Microstructure evolution and mechanical properties of Cu thin films with different annealing temperatures were investigated by atomic force microscopy (AFM), X-ray diffraction (XRD), and nanoindentation. The surface morphology, roughness, and grain size of the Cu films were characterized by AFM. The minimization of energy including surface energy, interface energy, and strain energy (elastic strain energy and plastic strain energy) controlled the microstructural evolution. A classical Hall-Petch relationship was exhibited between the yield stress and grain size. The residual stress depended on crystal orientation. The residual stress as-deposited was of tension and decreased with decreasing of (111) orientation. The ratio of texture coefficient of (111)/(220) can be used as a merit for the state of residual stress.


1993 ◽  
Vol 320 ◽  
Author(s):  
Y. Morand ◽  
E. Blanquet ◽  
N. Bourhila ◽  
N. Thomas ◽  
C. Bernard ◽  
...  

ABSTRACTThin films of semiconducting iron sulicide β-FeSi2 have been synthetized by Low Pressure Chemical Vapor Deposition in a cold wall reactor, starting from iron chloride and silane. Optimum experimental conditions for both iron chlorination and iron disilicide deposition have been determined by classical thermodynamic calculations. Despite the narrow range of as predicted deposition parameters, it has been possible to obtain mirror like thin films of pure polycrystalline β-FeSi2 on SiO2 substrate. The structural characteristics of the as deposited layers observed by SEM, ABS and RBS are presented together with their electronic properties.


2009 ◽  
Vol 1160 ◽  
Author(s):  
Emanuele Rimini ◽  
Riccardo De Bastiani ◽  
Egidio Carria ◽  
Maria Grazia Grimaldi ◽  
Giuseppe Nicotra ◽  
...  

AbstractThe crystallization of amorphous Ge2Sb2Te5 thin films has been studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The analysis has been performed on partially crystallized films, with a surface crystalline fraction (fS) ranging from 20% to 100%. XRD analysis indicates the presence, in the partially transformed layer, of grains with average lattice parameters higher than that of the equilibrium metastable cubic phase (from 6.06 Å at fS=20% to 6.01 Å at fS=100%). The amorphous to crystal transition, as shown by TEM analysis, occurs through the nucleation of face-centered-cubic crystal domains at the film surface. Local dimples appear in the crystallized areas, due to the higher atomic density of the crystal phase compared to the amorphous one. At the initial stage of the transformation, a fast bi-dimensional growth of such crystalline nucleus occurs by the generation of transrotational grains in which the lattice bending gives rise to an average lattice parameter significantly larger than that of the face-centered-cubic phase in good agreement with the XRD data. As the crystallized fraction increases above 80%, dimples and transrotational structures start to disappear and the lattice parameter approaches the bulk value.


2012 ◽  
Vol 36 (2) ◽  
pp. 233-240 ◽  
Author(s):  
M R A Bhuiyan ◽  
M A H Miah ◽  
J Begum

Zinc selenide (ZnSe) thin films were deposited on to chemically and ultrasonically cleaned  glass substrates at different substrate temperatures from room temperature to 200°C keeping the  thickness fixed at 300 nm by using thermal evaporation method in vacuum. The structural properties of the films were ascertained by X-ray diffraction (XRD) method utilizing a  diffractometer. The optical properties were measured in the photon wavelength ranging between 300 and 2500 nm by using a UV-VIS-NIR spectrophotometer. The XRD patterns reveal that the  films were polycrystalline in nature exhibiting f.c.c zincblende structure with average lattice parameter, a = 5.6873Å. The grain size, strain and dislocation densities of the films have bee calculated. The optical transmittance and reflectance were utilized to compute the absorption  coefficient, band gap energy and refractive index of the films. The band gap energy of the films  was extracted from the absorption spectra. The direct band gap energy of the films slightly increases with substrate temperature.DOI: http://dx.doi.org/10.3329/jbas.v36i2.12969Journal of Bangladesh Academy of Sciences, Vol. 36, No. 2, 233-240, 2012


1994 ◽  
Vol 9 (12) ◽  
pp. 3131-3144 ◽  
Author(s):  
Shefford P. Baker ◽  
William D. Nix

The mechanical properties of compositionally modulated Au-Ni films were investigated by submicrometer depth-sensing indentation and by deflection of micrometer-scale cantilever beams. Films prepared by sputter deposition with composition wavelengths between 0.9 and 4.0 nm were investigated. Strength was found to be high and invariant with composition wavelength. Experimental and data analysis methods were developed to provide more accurate and precise measurements of elastic stiffness. Large enhancements in stiffness (the “supermodulus effect”) were not observed. Rather, relatively small but significant minima were observed at a composition wavelength of about 1.6 nm by both techniques. These variations were found to be strongly correlated with variations in the average lattice parameter normal to the plane of the film. Both structural and mechanical property variations are consistent with a simple model in which the film consists of bulk-like Au and Ni layers with interfaces of constant thickness.


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