Ion Beam Annealing of Vapor-Deposited Carbon Film

1990 ◽  
Vol 188 ◽  
Author(s):  
Kazuo Higuchi ◽  
Shoji Noda ◽  
Sumiko Iritani ◽  
Tomoji Ishiguro ◽  
Osami Kamigaito
Keyword(s):  
Critical Temperature ◽  
Ion Implantation ◽  
Adhesion Strength ◽  
Ion Beam ◽  
Carbon Film ◽  
Sheet Resistivity ◽  
Graphite Sheet ◽  
Resistivity Measurements ◽  
Deposited Film

ABSTRACTThe effects of ion implantation on microtexture of vapordeposited carbon film were studied by Raman, XRD, TEM and sheet resistivity measurements. Growth of graphitemicrocrystals in the film was found when the film was implanted at the temperature above about 500 K. while graphite-sheet in the as-deposited film was distorted when it was implanted at the temperature below 300 K. The critical temperature for the ion beam annealing was estimated to be about 350 K. Ion implantation also caused the increase of the adhesion strength of the carbon film to a substrate.

Observations of Damage and Transport of Hydrogen in Ion Bombarded Polycrystalline Silicon

1984 ◽  
Vol 33 ◽  
Author(s):  
D. J. Sharp ◽  
J. K. G. Panitz ◽  
C. H. Seager
Keyword(s):  
Polycrystalline Silicon ◽  
Ion Beam ◽  
Columnar Structure ◽  
Hydrogen Transport ◽  
Transport Mechanisms ◽  
Sheet Resistivity ◽  
Near Surface ◽  
Resistivity Measurements ◽  
Transmission Electron ◽  
Defect Passivation

ABSTRACTA combination of chemical etching and sheet resistivity measurements showed that intense (1.4 mA/cm2 ) low energy (1400 eV) ion beam hydrogenation of polycrystalline silicon having a columnar structure can produce electrical defect passivation to depths in the order of 100 μm. Transmission electron micrographs disclose surface and near-surface features resulting from the ion beam bombardment which suggest that one of the hydrogen transport mechanisms may be defect induced.

Modeling for the Diamond-Like Carbon Film Synthesis by Plasma Based Ion Implantation

2000 ◽  
Vol 647 ◽  
Author(s):  
Yoshiko Miyagawa ◽  
Flyura Djurabekova ◽  
Soji Miyagawa
Keyword(s):  
Ion Implantation ◽  
Carbon Film ◽  
Mixing Layer ◽  
Diamond Surface ◽  
Ion Energy ◽  
Dynamic Monte Carlo ◽  
Film Synthesis ◽  
Hydrogenated Amorphous ◽  
Complete Dissociation ◽  
Deposited Film

AbstractDynamic Monte Carlo simulations with the binary collision approximation have been applied to the synthesis of hydrogenated amorphous carbon (a-C:H) films by plasma based ion implantation (PBII). We take as representative carbon carriers energetic CH3+ ions and CH3 radicals. The direct chemical incorporation of the radicals, like CH3 reacting with a diamond surface, is too low for the deposition of DLC films, so that the other reaction mechanisms should be responsible. We assumed (a) complete dissociation of CH3+ ions into one C atom and three H atoms with identical velocities upon bombarding the surface, (b) a unity and only one mono-layer sticking of CH3 radicals on the surface, (c) incorporation (stitching) of H and C atoms under the surface induced by binary collisions with energetic CH3+ ions, (d) release of H atoms by the dissociation of CH3 radicals on the surface, and (e) release of a part of displaced H atom after the subsequent collision cascade. We also assumed only the stitched carbon atoms form sp3 states and all other carbon atoms form sp2 states. The effect of the target voltage on the ion dose was also included. The effects of ion/neutral arrival ratio and ion energy on the growth rate, the mixing layer thickness, the hydrogen content, and the sp3/sp2 ratio in the deposited film are presented.

scholarly journals The Effect of Nitrogen Ion Implantation on the Surface Properties of Ti6Al4V Alloy Coated by a Carbon Nanolayer

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Petr Vlcak ◽  
Frantisek Cerny ◽  
Zdenek Weiss ◽  
Stanislav Danis ◽  
Josef Sepitka ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Coefficient Of Friction ◽  
Ion Beam ◽  
Carbon Film ◽  
Optical Emission ◽  
X Ray Diffraction ◽  
Measured Concentration ◽  
The Coefficient Of Friction ◽  
Nitrogen Ions ◽  
Nitrogen Ion

The ion beam assisted deposition (IBAD) method was chosen for preparing a carbon thin film with a mixing area on a substrate of Ti6Al4V titanium alloy. Nitrogen ions with energy 90 keV were used. These form a broad ion beam mixing area at the interface between the carbon film and the substrate. We investigated the chemical composition by the glow discharge optical emission spectroscopy (GD-OES) method and the phases by the X-ray diffraction (XRD) method. The measured concentration profiles indicate the mixing of the carbon film into the substrate, which may have an effect on increasing the adhesion of the deposited film. The nanohardness and the coefficient of friction were measured. We found that the modified samples had a markedly lower coefficient of friction even after damage to the carbon film, and they also had higher nanohardness than the unmodified samples. The increased nanohardness is attributed to the newly created phases that arose with ion implantation of nitrogen ions.

Studies of the scanning ion beam sputter-cleaned MgO crystal surface by scanning reflection electron microscopy

1987 ◽  
Vol 45 ◽  
pp. 144-145
Author(s):  
H.-J. Ou ◽  
J. M. Cowley ◽  
A. A. Higgs
Keyword(s):  
Crystal Surface ◽  
Ion Beam ◽  
Carbon Film ◽  
Surface Region ◽  
Bulk Sample ◽  
Chamber Pressure ◽  
Specimen Preparation ◽  
Detailed Surface ◽  
Gate Control ◽  
Reflection Electron Microscopy

A scanning ion gun system has been installed on the specimen preparation chamber (pressure ∼5xl0-8 torr) of the VG-HB5 STEM microscope. By using the specimen current imaging technique, it is possible to use an ion beam to sputter-clean the preferred surface region on a bulk sample. As shown in figure 1, the X-Y raster-gate control of the scanning unit for the Krato Mini-Beam I is used to minimize the beam raster area down to a 800μm x800μm square region. With beam energy of 2.5KeV, the MgO cleavage surface has been ion sputter-cleaned for less than 1 minute. The carbon film or other contaminant, introduced during the cleavage process in air, is mostly removed from the MgO crystal surfaces.The immediate SREM inspection of this as-cleaned MgO surface, within the adjacent STEM microscope, has revealed the detailed surface structures of atomic steps, which were difficult to observe on the as-cleaved MgO surfaces in the previous studies.

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

scholarly journals Field Emission from Carbon Films Deposited by Controlled-Low-Energy Beams and CVD Sources

1999 ◽  
Vol 585 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Vladimir I. Merkulov ◽  
L. R. Baylor ◽  
G. E. Jellison ◽  
D. B. Poker ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Surface Morphology ◽  
Field Emission ◽  
Metal Ion ◽  
Ion Beam ◽  
Pyrolytic Graphite ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Damage Site

AbstractThe principal interests in this work are energetic-beam control of carbon-film properties and the roles of doping and surface morphology in field emission. Carbon films with variable sp3-bonding fraction were deposited on n-type Si substrates by ArF (193 nm) pulsed-laser ablation (PLA) of a pyrolytic graphite target, and by direct metal ion beam deposition (DMIBD) using a primary Cs+ beam to generate the secondary C- deposition beam. The PLA films are undoped while the DMIBD films are doped with Cs. The kinetic energy (KE) of the incident C atoms/ions was controlled and varied over the range from ∼25 eV to ∼175 eV. Earlier studies have shown that C films' sp3-bonding fraction and diamond-like properties can be maximized by using KE values near 90 eV. The films' surface morphology, sp3–bonding fraction, and Cs-content were determined as a function of KE using atomic force microscopy, TEM/EELS, Rutherford backscattering and nuclear reaction measurements, respectively. Field emission (FE) from these very smooth undoped and Cs-containing films is compared with the FE from two types of deliberately nanostructured carbon films, namely hot-filament chemical vapor deposition (HF-CVD) carbon and carbon nanotubes grown by plasma-enhanced CVD. Electron field emission (FE) characteristics were measured using ∼25-μm, ∼5-μm and ∼1-μm diameter probes that were scanned with ∼75 nm resolution in the x-, y-, and z-directions in a vacuum chamber (∼5 × 10-7 torr base pressure) equipped with a video camera for viewing. The hydrogen-free and very smooth a-D or a-C films (with high or low sp3 content, and with or without ∼1% Cs doping) produced by PLD and DMIBD are not good field emitters. Conditioning accompanied by arcing was required to obtain emission, so that their subsequent FE is characteristic of the arc-produced damage site. However, deliberate surface texturing can eliminate the need for conditioning, apparently by geometrical enhancement of the local electric field. But the most promising approach for producing macroscopically flat FE cathodes is to use materials that are highly nanostructured, either by the deposition process (e.g. HF-CVD carbon) or intrinsically (e.g. carbon nanotubes). HF-CVD films were found to combine a number of desirable properties for FE displays and vacuum microelectronics, including the absence of conditioning, low turn-on fields, high emission site density, and apparent stability and durability during limited long-term testing. Preliminary FE measurements revealed that vertically aligned carbon nanotubes are equally promising.

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