Measurement of Stress Relaxation in Thin Aluminum Metallizations by Continuous Indentation and X-Ray Techniques

1990 ◽  
Vol 188 ◽  
Author(s):  
M. A. Korhonen ◽  
W. R. LaFontaine ◽  
C. A. Paszkiet ◽  
R. D. Black ◽  
Che-Yu Li
Keyword(s):  
Stress Relaxation ◽  
Integrated Circuit ◽  
Inert Atmosphere ◽  
Aluminum Film ◽  
Silicon Substrates ◽  
Aluminum Films ◽  
X Ray ◽  
Heat Treated ◽  
Thin Aluminum ◽  
Continuous Indentation

ABSTRACTThin aluminum films deposited on silicon substrates are representative of materials systems used in integrated circuit technology. Large stresses in such systems usually arise from thermal expansion mismatch between the thin film and the substrate, and constitute an important reliability concern.X-ray and continuous indentation testing were used to measure post-heat treatment stresses in a 0.3 μm thick aluminum film on a silicon substrate. The sample was heat treated at 450°C for one hour in an inert atmosphere, after which the stress relaxation was followed as a function of time. The stress data gathered by the two techniques agree very closely during a time span of about 100 hours.

Relationship Between The Void And Hillock Formation And The Grain Growth In Thin Aluminum Films

1996 ◽  
Vol 428 ◽  
Author(s):  
O. V. Kononenko ◽  
V. N. Matveev
Keyword(s):  
Stress Relaxation ◽  
Grain Growth ◽  
The Self ◽  
Diffusion Creep ◽  
Silicon Substrates ◽  
Aluminum Films ◽  
Bias Stress ◽  
Transmission Electron ◽  
Thin Aluminum ◽  
Hillock Formation

AbstractVoid and hillock formation during annealing was studied depending on the deposition conditions. Aluminum films were deposited onto oxidized silicon substrates by the self-ion assisted technique. The bias 0 or 6 kV was applied to the substrate during deposition. The films were then annealed in vacuum for 1 hour in the temperature range from 1500 to 550°C. The structure of the films was investigated by transmission electron microscopy.It was found that recrystallization and void and hillock formation in the films depend on the bias during deposition. Normal grain growth occurred in the films deposited without bias. Abnormal grain growth was observed in the 6 kV-films. It was also found that the mechanism of stress relaxation during thermal cycling depends on the self-ion bombardment. In the films prepared without bias, stress relaxation proceeds by diffusion creep. In the films deposited at the 6 kV bias, stress relaxation proceeds by plastic deformation.

Residual stress measurements of thin aluminum metallizations by continuous indentation and x-ray stress measurement techniques

1991 ◽  
Vol 6 (10) ◽  
pp. 2084-2090 ◽  
Author(s):  
W.R. LaFontaine ◽  
C.A. Paszkiet ◽  
M.A. Korhonen ◽  
Che-Yu Li
Keyword(s):  
Residual Stress ◽  
Stress Measurement ◽  
Measurement Techniques ◽  
Residual Stress Distribution ◽  
X Ray Diffraction ◽  
Aluminum Films ◽  
X Ray ◽  
Stress Measurements ◽  
Thin Aluminum ◽  
Continuous Indentation

Stress relaxation in aluminum films of several thicknesses was characterized by using both continuous indentation and x-ray diffraction techniques. Results of the indentation and x-ray stress measurements compare closely for films of small thicknesses. Indentation data from thicker films do not compare well to the x-ray data due to the presence of a residual stress distribution.

Local stress relaxation phenomena in thin aluminum films

1991 ◽  
Vol 9 (4) ◽  
pp. 2527-2535 ◽  
Author(s):  
Ulf Smith ◽  
Nils Kristensen ◽  
Fredric Ericson ◽  
Jan‐Åke Schweitz
Keyword(s):  
Stress Relaxation ◽  
Local Stress ◽  
Relaxation Phenomena ◽  
Aluminum Films ◽  
Thin Aluminum

The Transformation of Co-Rich Alloys Produced by Mechanical Alloying

2006 ◽  
Vol 509 ◽  
pp. 135-140
Author(s):  
Francisco Cruz-Gandarilla ◽  
R. Gayosso-Armenta ◽  
J. Gerardo Cabañas-Moreno ◽  
Heberto Balmori-Ramírez
Keyword(s):  
Single Phase ◽  
Intermetallic Phase ◽  
High Energy ◽  
Inert Atmosphere ◽  
X Ray Diffraction ◽  
Mechanically Alloyed ◽  
Powder Mixtures ◽  
X Ray ◽  
Heat Treated ◽  
Energy Ball

Elemental powder mixtures of Co and Ti were subjected to high-energy ball milling in order to produce mechanically alloyed powders with nominal compositions Co64Ti36, Co67Ti33, Co70Ti30, Co73Ti27, Co76Ti24 and Co85Ti15. The mechanically alloyed powders were treated during 30 minutes in inert atmosphere at temperatures in the range 300 – 700 °C. Both the as-milled powders as well as those subjected to heat treatments have been characterized by x-ray diffraction, scanning electron microscopy, energy-dispersive x-ray spectrometry and differential thermal analysis. As-milled products consist mostly of agglomerated powders with a size between 10 and 80 µm which give an amorphous-like diffraction pattern, except for the Co85Ti15 sample whose pattern presents the characteristic peaks of the Co3Ti intermetallic phase. The transformation of the asmilled powders occurs at temperatures in the range of about 530 – 670 °C with clearly observed exothermic events. The Co3Ti phase is found in all heat treated samples, together with fcc-Co (in Co76Ti24 and Co85Ti15) or the hexagonal Co2Ti intermetallic phase (in Co64Ti36, Co67Ti33 and Co70Ti30); the Co73Ti27 sample was essentially single-phase Co3Ti after heating to 700 °C. Our results suggest the occurrence of crystallization of an amorphous phase in two overlapping stages during heating of the mechanically alloyed powders.

The Formation and Morphology of Stress Induced Voids in Thin Narrow Aluminum Lines

1990 ◽  
Vol 203 ◽  
Author(s):  
C. A. Paszkiet ◽  
M. A. Korhonen ◽  
Che-Yu Li
Keyword(s):  
Heat Treatment ◽  
Silicon Nitride ◽  
Grain Boundaries ◽  
Room Temperature ◽  
Void Nucleation ◽  
Aluminum Film ◽  
Passivation Layer ◽  
Silicon Substrates ◽  
Heat Treated

ABSTRACTThin, narrow, lines were reactive ion etched from a highly textured aluminum film deposited on (100) silicon substrates; some arrays of lines were covered with a passivation layer of silicon nitride. Passivated and unpassivated lines were heat treated at 400°C.Voids were present in nitride covered lines which were aged for over three months at room temperature as well as in nitride covered lines examined immediately after heat treatment. Voids were not visible in bare, heat treated lines. Void nucleation occurred at the points of intersection of grain boundaries with line edges and growth appeared to follow grain boundaries.

Synthesis of B4C/SiC Composite from Sugar Based Precursor

2009 ◽  
Vol 283-286 ◽  
pp. 268-272 ◽  
Author(s):  
S. Cihangir ◽  
Celaletdin Ergun ◽  
Suat Yılmaz ◽  
Filiz Çinar Şahin
Keyword(s):  
Heat Treatment ◽  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Inert Atmosphere ◽  
The Other ◽  
X Ray Diffraction ◽  
X Ray ◽  
Heat Treated ◽  
Precursor Material ◽  
Sic Composites

In the present study, a method based on sulfuric acid dehydration of sugar was developed to synthesize a precursor material, which can yield B4C/SiC composites at much lower temperatures compared to traditional carbothermal methods. The precursor material for pure B4C was heat treated at the temperatures between 400 and 1600oC under inert atmosphere. The precursor material for B4C /SiC composites was heat treated only at 1600oC under an inert atmosphere. Then the samples were characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). The results showed that B-C bonds formed as low as 400oC. On the other hand, crystallized B4C and B4C / SiC composites can be obtained at the heat treatment temperatures between 1400 and 1600oC.

Real Time Observations of Dislocation-Mediated Plasticity in the Epitaxial AI (011)/Si(100) Thin Film System

2000 ◽  
Vol 619 ◽  
Author(s):  
Eric A. Stach ◽  
U. Dahmen ◽  
W.D. Nix
Keyword(s):  
Strain Relaxation ◽  
Experimental Studies ◽  
Dislocation Motion ◽  
Metal Films ◽  
Silicon Substrates ◽  
Thermally Induced ◽  
Aluminum Films ◽  
Transmission Electron ◽  
Thin Aluminum

ABSTRACTDespite numerous theoretical and experimental studies of strain relaxation in metal films on silicon substrates, the exact mechanisms by which dislocations mediate plasticity in these structures are not well understood. To elucidate these mechanisms, we present results from in-situ transmission electron microscopy annealing of thin aluminum films grown on Si (100). As a model system, we have chosen to focus on aluminum films which contain two (011) epitaxial variants with respect to the silicon substrate. In this paper we discuss our observations of the glide and climb behavior of dislocations in these structures during thermal cycling. These observations give qualitative insight into the mechanisms by which dislocation motion accommodates thermally induced strains in thin metal films.

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