Strain distribution in thin aluminum films using x‐ray depth profiling

1988 ◽  
Vol 63 (1) ◽  
pp. 126-131 ◽  
Author(s):  
M. F. Doerner ◽  
S. Brennan
Keyword(s):  
Strain Distribution ◽  
Depth Profiling ◽  
Aluminum Films ◽  
X Ray ◽  
Thin Aluminum

Measurement of Stress Relaxation in Thin Aluminum Metallizations by Continuous Indentation and X-Ray Techniques

1990 ◽  
Vol 188 ◽  
Author(s):  
M. A. Korhonen ◽  
W. R. LaFontaine ◽  
C. A. Paszkiet ◽  
R. D. Black ◽  
Che-Yu Li
Keyword(s):  
Stress Relaxation ◽  
Integrated Circuit ◽  
Inert Atmosphere ◽  
Aluminum Film ◽  
Silicon Substrates ◽  
Aluminum Films ◽  
X Ray ◽  
Heat Treated ◽  
Thin Aluminum ◽  
Continuous Indentation

ABSTRACTThin aluminum films deposited on silicon substrates are representative of materials systems used in integrated circuit technology. Large stresses in such systems usually arise from thermal expansion mismatch between the thin film and the substrate, and constitute an important reliability concern.X-ray and continuous indentation testing were used to measure post-heat treatment stresses in a 0.3 μm thick aluminum film on a silicon substrate. The sample was heat treated at 450°C for one hour in an inert atmosphere, after which the stress relaxation was followed as a function of time. The stress data gathered by the two techniques agree very closely during a time span of about 100 hours.

Residual stress measurements of thin aluminum metallizations by continuous indentation and x-ray stress measurement techniques

1991 ◽  
Vol 6 (10) ◽  
pp. 2084-2090 ◽  
Author(s):  
W.R. LaFontaine ◽  
C.A. Paszkiet ◽  
M.A. Korhonen ◽  
Che-Yu Li
Keyword(s):  
Residual Stress ◽  
Stress Measurement ◽  
Measurement Techniques ◽  
Residual Stress Distribution ◽  
X Ray Diffraction ◽  
Aluminum Films ◽  
X Ray ◽  
Stress Measurements ◽  
Thin Aluminum ◽  
Continuous Indentation

Stress relaxation in aluminum films of several thicknesses was characterized by using both continuous indentation and x-ray diffraction techniques. Results of the indentation and x-ray stress measurements compare closely for films of small thicknesses. Indentation data from thicker films do not compare well to the x-ray data due to the presence of a residual stress distribution.

Time-Resolved, Laser-Induced Phase Transformation in Aluminum

1984 ◽  
Vol 35 ◽  
Author(s):  
S. Williamson ◽  
G. Mourou ◽  
J.C.M. Li
Keyword(s):  
Point Defect ◽  
Long Range ◽  
Rapid Heating ◽  
Range Order ◽  
Nucleation Theory ◽  
Long Range Order ◽  
Time Resolved ◽  
Aluminum Films ◽  
Thin Aluminum ◽  
Initial Nucleus

ABSTRACTThe technique of picosecond electron diffraction is used to time resolve the laser-induced melting of thin aluminum films. It is observed that under rapid heating conditions, the long range order of the lattice subsists for lattice temperatures well above the equilibrium point, indicative of superheating. This superheating can be verified by directly measuring the lattice temperature. The collapse time of the long range order is measured and found to vary from 20 ps to several nanoseconds according to the degree of superheating. Two interpretations of the delayed melting are offered, based on the conventional nucleation and point defect theories. While the nucleation theory provides an initial nucleus size and concentration for melting to occur, the point defect theory offers a possible explanation for how the nuclei are originally formed.

scholarly journals Local Strain Distribution in ZnO Microstructures Visualized with Scanning Nano X‐Ray Diffraction and Impact on Electrical Properties

2021 ◽  
pp. 2100201
Author(s):  
Philipp Jordt ◽  
Stjepan B. Hrkac ◽  
Jorit Gröttrup ◽  
Anton Davydok ◽  
Christina Krywka ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Strain Distribution ◽  
Local Strain ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Superlayer Residual Stress Effect on the Indentation Adhesion Measurements

1999 ◽  
Vol 594 ◽  
Author(s):  
Alex A. Volinsky ◽  
Neville R. Moody ◽  
William W. Gerberich
Keyword(s):  
Residual Stress ◽  
Sputter Deposition ◽  
Work Of Adhesion ◽  
Stress Effect ◽  
Aluminum Films ◽  
Nanoindentation Testing ◽  
Deposition Parameters ◽  
Thin Aluminum ◽  
Residual Stress Effect ◽  
Sputter Deposited

AbstractThe practical work of adhesion has been measured in thin aluminum films as a function of film thickness and residual stress. These films were sputter deposited onto thermally oxidized silicon wafers followed by sputter deposition of a one micron thick W superlayer. The superlayer deposition parameters were controlled to produce either a compressive residual stress of 1 GPa or a tensile residual stress of 100 MPa. Nanoindentation testing was then used to induce delamination and a mechanics based model for circular blister formation was used to determine practical works of adhesion. The resulting measured works of adhesion for all films between 100 nm and 1 μm thick was 30 J/m2 regardless of superlayer stress. However, films with the compressively stressed superlayers produced larger blisters than films with tensile stressed superlayers. In addition, these films were susceptible to radial cracking producing a high variability in average adhesion values.

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