Defect Mechanisms in Degradation of Long Wavelength (1.30–1.55 Micron) Laser Diodes

1990 ◽  
Vol 184 ◽  
Author(s):  
S. N. G. Chu
Keyword(s):  
Active Region ◽  
Laser Diodes ◽  
Normal Operation ◽  
Nonradiative Recombination ◽  
Dislocation Loops ◽  
Dark Line ◽  
Long Wavelength ◽  
Structural Deterioration ◽  
Extrinsic Dislocation ◽  
Buried Heterostructure

ABSTRACTOptical degradation of long wavelength (1.30–1.55 micron) laser diodes during normal operation or accelerated aging test caused by lattice structural deterioration of the active region materials and mirror facet damage were investigated in detail. Extrinsic dislocation loops of 1/2<100>{010) types were observed in gradually degraded channeled-substrate-buried-heterostructure (CSBH) lasers. These dislocation loops, originated at the sidewall interfaces outside the active region, grew into the active region in the direction of minority carrier injection. A great enhancement of the loops' growth rate was observed after they entered the active region, indicating a nonradiative recombination enhanced defect reaction under the strong optical field. Furthermore, the <100> oriented extrinsic dislocation loops were confirmed to be dark-line-defects (DLDs). On the other hand, strong nonradiative recombination centers, created by mirror facet damage, or pre-existed internally inside the cavity, resulted localized melting on the {111} planes. The propagation of the localized melt-patch along the laser beam direction created a wormlike defect along the laser cavity, which degraded the laser device catastrophically. Various types of grown-in defects for CSBH and etched-mesa-buried-heterostructure (EMBH) laser devices are described and their effects on the device performance are demonstrated.

scholarly journals Role of dislocations in nitride laser diodes with different indium content

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Agata Bojarska-Cieślińska ◽  
Łucja Marona ◽  
Julita Smalc-Koziorowska ◽  
Szymon Grzanka ◽  
Jan Weyher ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Laser Diodes ◽  
Diffusion Path ◽  
Vapour Phase ◽  
Indium Content ◽  
Nonradiative Recombination ◽  
Light Emitters ◽  
Vapour Phase Epitaxy

AbstractIn this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.

Impurity-Induced Layer Disordering in AlxGa1−xAs-GaAs Quantum well Heterostructures -

1988 ◽  
Vol 126 ◽  
Author(s):  
D. G. Deppe ◽  
L. J. Guido ◽  
N. Holonyak
Keyword(s):  
Experimental Data ◽  
Quantum Well ◽  
Laser Diodes ◽  
Growth Direction ◽  
High Power Laser ◽  
Power Laser ◽  
Frenkel Defects ◽  
Buried Heterostructure ◽  
And Diffusion ◽  
Disordered Regions

ABSTRACTSelective interdiffusion of Al and Ga at AlxGa1−x As-GaAs heterointerfaces can be carried out by conventional masking procedures and diffusion of acceptor impurities (e.g., Zn), or donor impurities (e.g., Si), or also by ion implantation. This process, impurity-induced layer disordering (IILD), makes it possible to convert quantum well heterostructures (QWHs) such as AlxGa1−xAs-GaAs superlattices (SLs) into bulk homogeneous AlyGa1−yAs where y is the average Al composition of the QWH or SL. Since th IILY process is maskable and thus selective, heterojunctions can be formed in directions perpendicular to the crystal growth direction, i.e., between as-grown “ordered” and IILD “disordered” regions. To date this process has been used most effectively in the fabrication of buriedheterostructure QW lasers, single and multiple stripe, where the disordered regions provide both optical and electrical confinement. The IILD process has also been used to advantage in the fabrication of high power laser diodes with non-absorbing “windows” at the laser facets and thus with better immunity from facet damage. In this paper we present data on the application of the IILD process to the fabrication of buried-heterostructure QW laser diodes. We also describe possible mechanisms by which the impurity-induced layer disordering proceeds based on Column III “Frenkel” defects and the influence of the crystal Fermi level on the defect solubility. These mechanisms are supported by experimental data.

Al-free active region laser diodes at 894 nm for compact Cesium atomic clocks

2015 ◽  
Author(s):  
N. Von Bandel ◽  
J. Bébé Manga Lobé ◽  
M. Garcia ◽  
A. Larrue ◽  
Y. Robert ◽  
...  
Keyword(s):  
Active Region ◽  
Laser Diodes ◽  
Atomic Clocks

Review of Al-free active region laser diodes on GaAs for pumping applications

2015 ◽  
Author(s):  
M. Krakowski ◽  
M. Lecomte ◽  
N. Michel ◽  
M. Calligaro ◽  
M. Carbonnelle ◽  
...  
Keyword(s):  
Active Region ◽  
Laser Diodes

Asymmetric Heterostructure With Reduced Distance From Active Region to Heatsink for 810-nm Range High-Power Laser Diodes

2012 ◽  
Vol 48 (4) ◽  
pp. 465-471 ◽  
Author(s):  
Andrzej Malag ◽  
Elżbieta Dabrowska ◽  
Marian Teodorczyk ◽  
Grzegorz Sobczak ◽  
Anna Kozlowska ◽  
...  
Keyword(s):  
Active Region ◽  
High Power ◽  
Laser Diodes ◽  
High Power Laser ◽  
Power Laser ◽  
Nm Range
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