In situ etching and regrowth process for edge- and surface-emitting laser diodes with an AlGaAs/GaAs buried heterostructure

1995 ◽  
Vol 13 (4) ◽  
pp. 1529 ◽  
Author(s):  
Mutsuo Ogura
Keyword(s):  
Laser Diodes ◽  
Surface Emitting Laser ◽  
Buried Heterostructure

Vacuum Integrated Fabrication of Buried Heterostructure Edge Emitting Laser Diodes

1993 ◽  
Vol 300 ◽  
Author(s):  
M. Hong ◽  
D. Vahkshoori ◽  
L. H. Grober ◽  
J. P. Mannaerts ◽  
S. N. G. Chu ◽  
...  
Keyword(s):  
Electron Cyclotron Resonance ◽  
Laser Diodes ◽  
Surface Damage ◽  
Near Surface ◽  
Molecular Beam Epitaxial ◽  
Ecr Plasma ◽  
Native Oxides ◽  
Chemical Etch ◽  
Buried Heterostructure

ABSTRACTWe describe an in-situ fabrication process which combines electron cyclotron resonance (ECR) plasma H2 to clean native oxides, ECR SiCl4 to etch anisotropically, a brief Cl2 chemical etch to remove any near surface damage and contamination, and molecular beam epitaxial (MBE) regrowth. We report the first buried heterostructure (BH) AlGaAs/GaAs/InGaAs edge emitting laser diodes fabricated using this in-situ process. The lasers operate in continuous mode without noticeable degradation.

Buried heterostructure surface emitting laser diodes fabricated using integrated vacuum processing

2002 ◽  
Author(s):  
M. Hong ◽  
D. Vakhshoori ◽  
L.H. Grover ◽  
J.P. Mannaerts ◽  
J.D. Wynn ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Surface Emitting Laser ◽  
Buried Heterostructure ◽  
Vacuum Processing

Impurity-Induced Layer Disordering in AlxGa1−xAs-GaAs Quantum well Heterostructures -

1988 ◽  
Vol 126 ◽  
Author(s):  
D. G. Deppe ◽  
L. J. Guido ◽  
N. Holonyak
Keyword(s):  
Experimental Data ◽  
Quantum Well ◽  
Laser Diodes ◽  
Growth Direction ◽  
High Power Laser ◽  
Power Laser ◽  
Frenkel Defects ◽  
Buried Heterostructure ◽  
And Diffusion ◽  
Disordered Regions

ABSTRACTSelective interdiffusion of Al and Ga at AlxGa1−x As-GaAs heterointerfaces can be carried out by conventional masking procedures and diffusion of acceptor impurities (e.g., Zn), or donor impurities (e.g., Si), or also by ion implantation. This process, impurity-induced layer disordering (IILD), makes it possible to convert quantum well heterostructures (QWHs) such as AlxGa1−xAs-GaAs superlattices (SLs) into bulk homogeneous AlyGa1−yAs where y is the average Al composition of the QWH or SL. Since th IILY process is maskable and thus selective, heterojunctions can be formed in directions perpendicular to the crystal growth direction, i.e., between as-grown “ordered” and IILD “disordered” regions. To date this process has been used most effectively in the fabrication of buriedheterostructure QW lasers, single and multiple stripe, where the disordered regions provide both optical and electrical confinement. The IILD process has also been used to advantage in the fabrication of high power laser diodes with non-absorbing “windows” at the laser facets and thus with better immunity from facet damage. In this paper we present data on the application of the IILD process to the fabrication of buried-heterostructure QW laser diodes. We also describe possible mechanisms by which the impurity-induced layer disordering proceeds based on Column III “Frenkel” defects and the influence of the crystal Fermi level on the defect solubility. These mechanisms are supported by experimental data.

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