Review of Al-free active region laser diodes on GaAs for pumping applications

2015 ◽  
Author(s):  
M. Krakowski ◽  
M. Lecomte ◽  
N. Michel ◽  
M. Calligaro ◽  
M. Carbonnelle ◽  
...  
Keyword(s):  
Active Region ◽  
Laser Diodes

Al-free active region laser diodes at 894 nm for compact Cesium atomic clocks

2015 ◽  
Author(s):  
N. Von Bandel ◽  
J. Bébé Manga Lobé ◽  
M. Garcia ◽  
A. Larrue ◽  
Y. Robert ◽  
...  
Keyword(s):  
Active Region ◽  
Laser Diodes ◽  
Atomic Clocks

Asymmetric Heterostructure With Reduced Distance From Active Region to Heatsink for 810-nm Range High-Power Laser Diodes

2012 ◽  
Vol 48 (4) ◽  
pp. 465-471 ◽  
Author(s):  
Andrzej Malag ◽  
Elżbieta Dabrowska ◽  
Marian Teodorczyk ◽  
Grzegorz Sobczak ◽  
Anna Kozlowska ◽  
...  
Keyword(s):  
Active Region ◽  
High Power ◽  
Laser Diodes ◽  
High Power Laser ◽  
Power Laser ◽  
Nm Range

scholarly journals Temperature performance of InGaAs/InGaAlAsTemperature performance of InGaAs/InGaAlAs laser diodes with δ-doping active region

2019 ◽  
Vol 1410 ◽  
pp. 012104
Author(s):  
S S Rochas ◽  
I I Novikov ◽  
A G Gladyshev ◽  
E S Kolodeznyi ◽  
M V Maximov ◽  
...  
Keyword(s):  
Active Region ◽  
Laser Diodes ◽  
Temperature Performance

High Power InAsSb/InAsSbP Laser Diodes Emitting at 3 ∼ 5 μm Range

1996 ◽  
Vol 450 ◽  
Author(s):  
M. Razeghi ◽  
J. Diaz ◽  
H. J. Yi ◽  
D. Wu ◽  
B. Lane ◽  
...  
Keyword(s):  
Active Region ◽  
Energy Gap ◽  
Maximum Output Power ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Threshold Current ◽  
Multiple Quantum ◽  
Maximum Output ◽  
Double Heterostructure

ABSTRACTWe report metalorganic chemical vapor deposition-grown double heterostructure and multiple quantum well InAsSb/InAsSbP laser diodes emitting at 3 to 4 μm and light emitting diodes up to 5 μm. Maximum output power up to 1 W (from two facets) with differential efficiency above 70 % up to 150 K was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.6 μm at 90 K. Maximum operating temperature up to 220 K with threshold current density of 40 A/cm2 at 78 K were achieved from the double-heterostructure lasers emitting at 3.2 μm. The far-field beam divergence as narrow as 24° was achieved with the use of higher energy gap barrier layers, i.e., lower effective refractive index, in MQW active region. We also discuss the effect of composition-fluctuation in the InAsSb active region on the gain and threshold current of the lasers.

Effects of active region design on gain and carrier injection and transport of CW $(20\bar{2}\bar{1})$ semipolar InGaN laser diodes

2016 ◽  
Vol 9 (9) ◽  
pp. 092104 ◽  
Author(s):  
Daniel L. Becerra ◽  
Daniel A. Cohen ◽  
Robert M. Farrell ◽  
Steven P. DenBaars ◽  
Shuji Nakamura
Keyword(s):  
Active Region ◽  
Laser Diodes ◽  
Carrier Injection

AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature

1999 ◽  
Vol 38 (Part 1, No. 1A) ◽  
pp. 74-76 ◽  
Author(s):  
Zaman Iqbal Kazi ◽  
Takashi Egawa ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Active Region ◽  
Characteristic Temperature ◽  
Laser Diodes ◽  
Si Substrate ◽  
Gaas Laser

scholarly journals AlGaInAs/InP Based Five & Three Quantum Wells Mode Locked Laser Diodes: A Comparative Study

2020 ◽  
Vol 26 (5) ◽  
pp. 22-27
Author(s):  
Jehan Akbar ◽  
Muhammad Hanif ◽  
Muhammad Azhar Naeem ◽  
Kamran Abid
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Laser Diodes ◽  
Mode Locking ◽  
Field Pattern ◽  
Far Field ◽  
Optical Pulses ◽  
Wide Range ◽  
Mode Locked Laser ◽  
Far Field Pattern

Comparison of performance of semiconductor mode-locked laser diodes fabricated using AlGaInAs/InP material containing 5 and 3 quantum wells (QWs) inside the active region is reported. The simulations and experimental results show that lasers containing five QWs materials produce larger beam divergence and temporally broader optical pulses. For improvement in the mode-locking of lasers and reducing the far-field pattern, the number of QWs inside the active region was decreased from five to three and a far-field decreasing layer along with a thick spacer layer were introduced in the n-cladding region of epitaxial material. Before growing the material, simulations were carried out to optimise the design. The lower optical confinement factor and higher gain saturation energy of three QWs based mode-locked lasers provide higher average and peak output power, reduced and symmetric far-field pattern, better radio frequency (RF) spectra, shorter optical pulses, and stable optimal mode-locking for a wide range of gain current and saturable absorber reverse voltage.

Al-Free Active Region DFB Laser Diodes operating at 894nm for compact Cesium Atomic Clocks

2016 ◽  
Author(s):  
N. Von Bandel ◽  
M. Myara ◽  
P. Signoret ◽  
A. Larrue ◽  
O. Parillaud ◽  
...  
Keyword(s):  
Active Region ◽  
Laser Diodes ◽  
Atomic Clocks ◽  
Dfb Laser

Narrow spectral linewidth of Al-Free Active Region DFB Laser Diodes operating at 852nm

2007 ◽  
Author(s):  
V. Ligeret ◽  
S. Bansropun ◽  
M. Lecomte ◽  
M. Calligaro ◽  
O. Parillaud ◽  
...  
Keyword(s):  
Active Region ◽  
Laser Diodes ◽  
Spectral Linewidth ◽  
Dfb Laser
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