Depth Variation of Transport Parameters in Poly-Si Under Am1 Illumination

1990 ◽  
Vol 182 ◽  
Author(s):  
Z. Chen ◽  
L.C. Burton
Keyword(s):  
Electron Transport ◽  
Grain Boundary ◽  
Electronic Properties ◽  
Computer Modeling ◽  
Barrier Height ◽  
Polycrystalline Silicon ◽  
Diffusion Length ◽  
Electron Lifetime ◽  
Transport Parameters ◽  
And Diffusion

Abstract; Grain boundary (GB) recombination is a controlling factor in the electronic properties of polycrystalline silicon. We would like to report computer modeling of the variation of electron transport parameters with depth, under illumination. The GB barrier height (Vg) versus photogeneration rate G and depth are presented, along with the resulting electron lifetime (π), mobility (µ) and diffusion length (L). Under AM1 illumination, Vg increases whereas -π, µ and L all decrease drastically with increasing depth. The GB trap density is used as a parameter, and strongly influences transport parameters in both dark and light cases.

Noise Sources in Polycrystalline Silicon Thin-Film Transistors

2002 ◽  
Vol 744 ◽  
Author(s):  
Il Ki Han ◽  
Young Ju Park ◽  
Woon Jo Cho ◽  
Won Jun Choi ◽  
Jungil Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Barrier Height ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Silicon Thin Film ◽  
Noise Sources ◽  
New Device

ABSTRACTSources for low frequency noise in polycrystalline silicon thin-film transistors are analytically investigated. The grain boundary is modeled as symmetric Schottky barrier and a new device equation for current conduction in thin-film transistors is presented. At lower currents where barrier height is large enough to provide necessary distribution of time constants for 1/f noise, the number fluctuation via barrier height modulation at the grain boundary is found to be the main noise generation mechanism. At higher currents, mobility and diffusivity fluctuation are found to be dominant

Ion Implantation Doping of Semi-Insulating Polycrystalline Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
Salvatore Lombardo ◽  
S. U. Campisano
Keyword(s):  
Grain Boundary ◽  
Polycrystalline Silicon ◽  
Room Temperature ◽  
Thermionic Emission ◽  
Threshold Value ◽  
Threshold Level ◽  
Room Temperature Resistivity ◽  
Undoped Material ◽  
Donor And Acceptor ◽  
And Diffusion

ABSTRACTThe study of doping of silicon nano-grains in semi-insulating polycrystalline silicon is of paramount importance since intense room-temperature luminescence at 1.54 µm has been demonstrated in this silicon-based semiconductor when doped with erbium ions. We have investigated the formation of p- and n-type layers of semi-insulating polycrystalline silicon by implantation and diffusion of B, P, As, and Er. The room-temperature resistivity can be changed by more than six orders of magnitude for both p- and n-type doping. A dramatic decrease of resistivity is observed for dopant concentrations above a threshold level; this effect is explained by assuming that the free-carrier motion is limited by grain boundary barriers and the electrical conduction is due to thermionic emission and tunneling of the carriers through the barriers. The prevalence of one mechanism over the other depends upon temperature, oxygen concentration and doping. In the undoped material the barrier height is large (≈ 0.5 eV), but for dopant concentrations above the threshold, it decreases with the doping level. Correspondingly, the conductivity increases by many orders of magnitude. The determination of the threshold value allows the evaluation of donor and acceptor grain boundary trap densities. Diodes have been fabricated by implantation and diffusion of boron and erbium. The I-V characteristics of these diodes are interpreted on the basis of the material modeling.

Grain boundary light beam induced current: A characterization of bonded silicon wafers and polycrystalline silicon thin films for diffusion length extraction

2016 ◽  
Vol 213 (7) ◽  
pp. 1728-1737 ◽  
Author(s):  
Orman Gref ◽  
Ana-Maria Teodoreanu ◽  
Rainer Leihkauf ◽  
Heiko Lohrke ◽  
Martin Kittler ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Light Beam ◽  
Polycrystalline Silicon ◽  
Diffusion Length ◽  
Silicon Wafers ◽  
Induced Current ◽  
Silicon Thin Films
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