Influence of doping concentration and interface state density on grain boundary barrier height of polycrystalline silicon

1992 ◽  
Author(s):  
Dharmendra P. Singh ◽  
P. S. Basak
Keyword(s):  
Grain Boundary ◽  
Barrier Height ◽  
Polycrystalline Silicon ◽  
Doping Concentration ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Grain Boundary Barrier

Determination of hot-carrier induced interface state density in polycrystalline silicon thin-film transistors

1998 ◽  
Vol 84 (4) ◽  
pp. 2341-2348 ◽  
Author(s):  
L. Mariucci ◽  
G. Fortunato ◽  
R. Carluccio ◽  
A. Pecora ◽  
S. Giovannini ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Silicon Thin Film ◽  
Hot Carrier

scholarly journals Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1698
Author(s):  
R. Padma ◽  
V. Rajagopal Reddy
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Series Resistance ◽  
Forward Bias ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Current Voltage ◽  
Density Of Interface States

The electrical properties of the Ir/Ru Schottky contacts on n-InGaN have been investigated by current-voltage (I-V), capacitance-voltage (C-V), capacitance-frequency (C-f) and conductance-frequency (G-f) measurements. The obtained mean barrier height and ideality factor from I-V are 0.61 eV and 1.89. The built-in potential, doping concentration and barrier height values are also estimated from the C-V measurements and the corresponding values are 0.62 V, 1.20x1017 cm-3 and 0.79 eV, respectively. The interface state density (NSS) obtained from forward bias I-V characteristics by considering the series resistance (RS) values are lower without considering the series resistance (RS). Furthermore, the interface state density (NSS) and relaxation time (tau) are also calculated from the experimental C-f and G-f measurements. The NSS values obtained from the I-V characteristics are almost three orders higher than the NSS values obtained from the C-f and G-f measurements. The experimental results depict that NSS and tau are decreased with bias voltage. The frequency dependence of the series resistance (RS) is attributed to the particular distribution density of interface states. DOI: 10.21883/FTP.2017.12.45189.8340

Interface state density in the interelectrode region of overlapping polycrystalline silicon gates

1982 ◽  
Vol 53 (12) ◽  
pp. 9146-9153 ◽  
Author(s):  
X. Q. Zheng ◽  
K. Hofmann ◽  
M. Schulz ◽  
L. Risch
Keyword(s):  
Polycrystalline Silicon ◽  
Interface State ◽  
State Density ◽  
Interface State Density

Interface state Density and Barrier Height Improvement in Ammonium Sulfide Treated Si/Al2O3 Interfaces

2021 ◽  
Author(s):  
Khushabu Agrawal ◽  
Vilas S. Patil ◽  
Fida Ali ◽  
Matheus Rabelo ◽  
Won Jong Yoo ◽  
...  
Keyword(s):  
Barrier Height ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Ammonium Sulfide

Electron Bean Induced Defects in Silicon/Indium Oxide Heterojunctions and Interfacial Reactions During Annealing

1986 ◽  
Vol 76 ◽  
Author(s):  
S. Kar ◽  
A. Pandey ◽  
R. K. Dwivedi
Keyword(s):  
Experimental Data ◽  
Charge Density ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Fixed Charge Density ◽  
Induced Defects

ABSTRACTSi/In203 diodes have been prepared by e-beam evaporation of In203 tablets. Annealing of these devices was carried out in N2 and H2 /N2 mixture at 1 atm. in the temperature range of 400–800°C. Experimental data indicated a large increase in the Schottky barrier height and growth of interfacial oxide during annealing. The interface state density was reduced by a factor of 2, but the results indicated the increase in the barrier height to be mainly due to reduction of positive fixed charge density.

MOS Interface Properties and MOSFET Performance on 4H-SiC{0001} and Non-Basal Faces Processed by N2O Oxidation

2004 ◽  
Vol 815 ◽  
Author(s):  
T. Kimoto ◽  
Y. Kanzaki ◽  
M. Noborio ◽  
H. Kawano ◽  
H. Matsunami
Keyword(s):  
Doping Concentration ◽  
Interface State ◽  
Interface Structure ◽  
State Density ◽  
Interface State Density ◽  
Interface Properties ◽  
Crystal Face ◽  
Channel Mobility ◽  
Pile Up ◽  
Effective Channel

Abstract4H-SiC(0001), (000-1), and (11-20) have been directly oxidized by N2O at 1300°C, and the MOS interfaces have been characterized. The interface state density has been significantly reduced by N2O oxidation on any face, compared to conventional wet O2 oxidation at 1150°C. Planar n-channel MOSFETs fabricated on lightly-doped 4H-SiC(0001), (000-1) and (11-20) faces have shown an effective channel mobility of 26, 43, and 78 cm2/Vs, respectively. The mobility decreased with increasing the doping concentration of p-body. SIMS analyses have revealed a clear pile-up of nitrogen atoms near the MOS interface. The thickness of interfacial SiCxOy layer can be decreased by utilizing N2O oxidation. The crystal face dependence of interface structure is discussed.

Interface-State-Density Evaluation of p-type and n-type Ge/GeNx Structures by Conductance Technique

2013 ◽  
Vol 133 (7) ◽  
pp. 1279-1284
Author(s):  
Takuro Iwasaki ◽  
Toshiro Ono ◽  
Yohei Otani ◽  
Yukio Fukuda ◽  
Hiroshi Okamoto
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Conductance Technique ◽  
Density Evaluation ◽  
P Type
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