Low Temperature Processing for Multilevel Interconnection and Packaging

1990 ◽  
Vol 181 ◽  
Author(s):  
T.-M. Lu ◽  
J. F. McDonald ◽  
S. Dabral ◽  
G.-R. Yang ◽  
L. You ◽  
...  
Keyword(s):  
Room Temperature ◽  
Metal Films ◽  
High Density ◽  
Deposition Technique ◽  
High Quality ◽  
Low Temperature Processing ◽  
Substrate Temperatures ◽  
And Diffusion ◽  
Quality Metal ◽  
Beam Deposition

ABSTRACTThe future high density multilevel interconnection and packaging requires that the combination of the insulator and conductor layers has a low RC value. Thermal stress and diffusion during processing are issues of great concern in the high density multilevel structures. The problem can be alleviated by a proper choice of materials and processes that do not require high temperature. In this paper we propose to use parylene and its derivatives (dielectric constant 2.3–2.6) as the possible interlayer dielectrics and Cu (bulk resistivity ∼1.7 μ Ω-cm) as the conductor. Parylene can be vapor-deposited and cured at room temperature. The metallization of Cu has been achieved at room temperature using the newly developed partially ionized beam deposition technique. This technique has been shown to grow high quality metal films with low resistivity at low substrate temperatures. The interaction between Cu and parylene, including adhesion and diffusion, is also discussed.

Synthesis and Characterization of PbTiO3 Thin Films Grown by Chemical Beam Deposition

1990 ◽  
Vol 204 ◽  
Author(s):  
K.Y. Hsieh ◽  
S.H. Rou ◽  
L.L.H. King ◽  
A.I. Kingon
Keyword(s):  
Thin Films ◽  
Active Oxygen ◽  
Deposition Technique ◽  
Fine Grained ◽  
Si Substrates ◽  
Gaas Devices ◽  
Substrate Temperatures ◽  
Beam Deposition

ABSTRACTA new deposition technique for PbTiO3 films utilizing chemical beams of metalorganic sources in an ultrahigh vacuum chamber is demonstrated. Ozone is introduced to provide a source of active oxygen. The role of active oxygen in controlling the surface chemical reactions is discussed. Fine grained, single phase PbTiO3 films have been deposited on MgO (100) and SiO2/Si substrates at substrate temperatures as low as 350°C. Films were characterized by XRD, SEM, and TEM. The results suggest that the chemical beam deposition technique provides another method for the fabrication and integration of ferroelectric thin films with silicon (or GaAs) devices.

1X Thin Films Prepared By Mass Separated Ion Beam Deposition

1994 ◽  
Vol 354 ◽  
Author(s):  
H. C. Hofsäss ◽  
C. Ronntng ◽  
U. Griesmeier ◽  
M. Gross
Keyword(s):  
Thermal Activation ◽  
Room Temperature ◽  
Ion Beam ◽  
Ir Absorption ◽  
Ion Energy ◽  
Ion Beam Deposition ◽  
Ion Energies ◽  
Substrate Temperatures ◽  
Absorption Measurements ◽  
Beam Deposition

AbstractWe have studied the growth and the properties of CN films prepared by deposition of mass separated 12C+ and 14N+ ions. The film thickness and density were determined as a function of ion energy between 20 eV and 500 eV and for substrate temperatures of 20 °C and 350 °C. Sputtering effects limit the maximum N concentration to about 30 - 40 at.% even for ion energies as low as 20 eV. IR absorption measurements indicate predominantly C-N and C=N bonding and an amorphous or strongly disordered CN-network. For room temperature deposited CN films with N concentrations up to 25 at.% I-V curves of metal-CN-metal devices show Frenkel-Poole behavior due to field-enhanced thermal activation of localized electrons. Films deposited at 350 °C have N concentrations below 15 at.% and graphitic properties like low resistivity and a density close to graphite.

Partially ionized beam deposition of oriented films

1989 ◽  
Vol 4 (2) ◽  
pp. 343-349 ◽  
Author(s):  
A. S. Yapsir ◽  
L. You ◽  
T. -M. Lu ◽  
M. Madden
Keyword(s):  
Room Temperature ◽  
Preferred Orientation ◽  
Deposition Technique ◽  
Drastic Reduction ◽  
Atom Ratio ◽  
Oriented Films ◽  
Partially Ionized ◽  
Fixed Bias ◽  
Orientation Growth ◽  
Beam Deposition

The microstructure of Al films deposited on SiO2 using the partially ionized beam (PIB) deposition technique is studied. It is shown that by employing less than 1% ions (ion-to-atom ratio) derived from the evaporated material and about 1–2 kV bias voltage at the substrate during deposition, one can grow highly (111) oriented Al films at room temperature. For a fixed bias potential, the value of the ion-to-atom ratio to achieve the optimum orientation effect is determined. At the optimum condition for the (111) preferred orientation growth, no significant enhancement in the grain size is observed. It is also found that a drastic reduction in the degree of the preferred orientation occurs when the films are deposited at a substrate temperature greater than 150 °C.

Phosphine-free engineering toward the synthesis of metal telluride nanocrystals: the role of a Te precursor coordinated at room temperature

Nanoscale ◽  
2018 ◽  
Vol 10 (46) ◽  
pp. 21928-21935 ◽  
Author(s):  
Min Wu ◽  
Yixuan Wang ◽  
Hongyu Wang ◽  
Hao Wang ◽  
Yongming Sui ◽  
...  
Keyword(s):  
Optical Properties ◽  
Room Temperature ◽  
High Quality ◽  
Application Prospects ◽  
Quality Metal

We developed a new phosphine-free strategy for fabricating high-quality metal telluride nanocrystals (NCs) by using a highly reactive Te precursor coordinated at room temperature. These metal telluride NCs with good optical properties possess excellent application prospects.

High Density Plasma Processing of Microcrystalline Si Thin Films

2005 ◽  
Vol 862 ◽  
Author(s):  
P. C. Joshi ◽  
A. T. Voutsas ◽  
J. W. Hartzell
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Volume Fraction ◽  
Average Crystallite Size ◽  
High Density ◽  
High Quality ◽  
Low Temperature Processing ◽  
Interfacial Characteristics ◽  
Ratio Range ◽  
Density Plasma

AbstractIn the present work, we report on the fabrication of high quality microcrystalline Si thin films by high-density PECVD technique. The typical deposition rate of the HD-PECVD μ-Si thin films was greater than 350 Å/min in the H2/SiH4 ratio range of 20-100. For a 150-nm-thick film deposited at a H2/SiH4 ratio of 20, the typical microcrystalline volume fraction and the average crystallite size corresponding to <111> orientation were 75% and 160 Å, respectively. The observed growth and properties of the μ-Si thin films show the potential of the high-density PECVD technique for the low temperature processing of high quality films with superior control of bulk and interfacial characteristics.

scholarly journals Vacuum deposition of high quality metal films on porous substrates

1982 ◽  
Vol 20 (4) ◽  
pp. 1341-1344 ◽  
Author(s):  
Barry L. Barthell ◽  
David V. Duchane
Keyword(s):  
Metal Films ◽  
Vacuum Deposition ◽  
High Quality ◽  
Quality Metal ◽  
Porous Substrates

scholarly journals High Quality Metal Formation by Ion Beam Deposition Method.

Materia Japan ◽  
1996 ◽  
Vol 35 (12) ◽  
pp. 1339-1344
Author(s):  
Kenya Ohashi ◽  
Kiyoshi Miyake
Keyword(s):  
Ion Beam ◽  
Deposition Method ◽  
High Quality ◽  
Ion Beam Deposition ◽  
Quality Metal ◽  
Beam Deposition

(111) Monocrystalline Nickel Films

1972 ◽  
Vol 30 ◽  
pp. 512-513
Author(s):  
T.E. Pratt ◽  
R.W. Vook
Keyword(s):  
Film Thickness ◽  
Deposition Rate ◽  
Room Temperature ◽  
Narrow Range ◽  
High Vacuum ◽  
Residual Pressure ◽  
Temperature Dependent ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Substrate Temperatures

(111) oriented thin monocrystalline Ni films have been prepared by vacuum evaporation and examined by transmission electron microscopy and electron diffraction. In high vacuum, at room temperature, a layer of NaCl was first evaporated onto a freshly air-cleaved muscovite substrate clamped to a copper block with attached heater and thermocouple. Then, at various substrate temperatures, with other parameters held within a narrow range, Ni was evaporated from a tungsten filament. It had been shown previously that similar procedures would yield monocrystalline films of CU, Ag, and Au.For the films examined with respect to temperature dependent effects, typical deposition parameters were: Ni film thickness, 500-800 A; Ni deposition rate, 10 A/sec.; residual pressure, 10-6 torr; NaCl film thickness, 250 A; and NaCl deposition rate, 10 A/sec. Some additional evaporations involved higher deposition rates and lower film thicknesses.Monocrystalline films were obtained with substrate temperatures above 500° C. Below 450° C, the films were polycrystalline with a strong (111) preferred orientation.

Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

1995 ◽  
Vol 53 ◽  
pp. 512-513
Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf
Keyword(s):  
Sample Preparation ◽  
Milling Time ◽  
High Density ◽  
Low Density ◽  
Ion Milling ◽  
High Quality ◽  
Variable Angle ◽  
Major Disadvantage ◽  
Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

Sign in / Sign up

Export Citation Format

Share Document