scholarly journals Vacuum deposition of high quality metal films on porous substrates

1982 ◽  
Vol 20 (4) ◽  
pp. 1341-1344 ◽  
Author(s):  
Barry L. Barthell ◽  
David V. Duchane
Keyword(s):  
Metal Films ◽  
Vacuum Deposition ◽  
High Quality ◽  
Quality Metal ◽  
Porous Substrates

Low Temperature Processing for Multilevel Interconnection and Packaging

1990 ◽  
Vol 181 ◽  
Author(s):  
T.-M. Lu ◽  
J. F. McDonald ◽  
S. Dabral ◽  
G.-R. Yang ◽  
L. You ◽  
...  
Keyword(s):  
Room Temperature ◽  
Metal Films ◽  
High Density ◽  
Deposition Technique ◽  
High Quality ◽  
Low Temperature Processing ◽  
Substrate Temperatures ◽  
And Diffusion ◽  
Quality Metal ◽  
Beam Deposition

ABSTRACTThe future high density multilevel interconnection and packaging requires that the combination of the insulator and conductor layers has a low RC value. Thermal stress and diffusion during processing are issues of great concern in the high density multilevel structures. The problem can be alleviated by a proper choice of materials and processes that do not require high temperature. In this paper we propose to use parylene and its derivatives (dielectric constant 2.3–2.6) as the possible interlayer dielectrics and Cu (bulk resistivity ∼1.7 μ Ω-cm) as the conductor. Parylene can be vapor-deposited and cured at room temperature. The metallization of Cu has been achieved at room temperature using the newly developed partially ionized beam deposition technique. This technique has been shown to grow high quality metal films with low resistivity at low substrate temperatures. The interaction between Cu and parylene, including adhesion and diffusion, is also discussed.

THEORETICAL GROUNDS FOR FORMATION OF HIGH QUALITY METAL-CERAMIC COATINGS BY CARBOVIBRATING ELECTRODE ARC STRENGTHENING

2020 ◽  
pp. 2-11
Author(s):  
N. V. TITOV ◽  
◽  
A. V. KOLOMEYCHENKO ◽  
V. L. BASINYUK ◽  
I. N. KRAVCHENKO ◽  
...  
Keyword(s):  
Ceramic Coatings ◽  
High Quality ◽  
Metal Ceramic ◽  
Quality Metal

An efficient organic solvent-free solution-processing strategy for high-mobility metal chalcogenide film growth

2017 ◽  
Vol 19 (4) ◽  
pp. 946-951 ◽  
Author(s):  
Jie Zhao ◽  
Il Jeon ◽  
Qinghua Yi ◽  
Menka Jain ◽  
Mark H. Rummeli ◽  
...  
Keyword(s):  
Film Growth ◽  
High Mobility ◽  
Free Solution ◽  
Processing Strategy ◽  
Chemical Solution ◽  
High Quality ◽  
Metal Chalcogenide ◽  
Solution Approach ◽  
Chalcogenide Film ◽  
Quality Metal

One of the primary challenges for high-quality metal chalcogenide film growth by a chemical solution approach is to avoid the use of volatile/hazardous organic solvents during the fabrication processes.

Socialist competition to produce high-quality metal

Metallurgist ◽  
1979 ◽  
Vol 23 (3) ◽  
pp. 151-152
Author(s):  
V. M. Volkov
Keyword(s):  
Socialist Competition ◽  
High Quality ◽  
Quality Metal

High-Quality Metal–Organic Framework Ultrathin Films for Electronically Active Interfaces

2016 ◽  
Vol 138 (8) ◽  
pp. 2576-2584 ◽  
Author(s):  
Víctor Rubio-Giménez ◽  
Sergio Tatay ◽  
Florence Volatron ◽  
Francisco J. Martínez-Casado ◽  
Carlos Martí-Gastaldo ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Metal Organic Framework ◽  
High Quality ◽  
Metal Organic ◽  
Quality Metal ◽  
Organic Framework
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