Synthesis and Characterization of PbTiO3 Thin Films Grown by Chemical Beam Deposition

1990 ◽  
Vol 204 ◽  
Author(s):  
K.Y. Hsieh ◽  
S.H. Rou ◽  
L.L.H. King ◽  
A.I. Kingon
Keyword(s):  
Thin Films ◽  
Active Oxygen ◽  
Deposition Technique ◽  
Fine Grained ◽  
Si Substrates ◽  
Gaas Devices ◽  
Substrate Temperatures ◽  
Beam Deposition

ABSTRACTA new deposition technique for PbTiO3 films utilizing chemical beams of metalorganic sources in an ultrahigh vacuum chamber is demonstrated. Ozone is introduced to provide a source of active oxygen. The role of active oxygen in controlling the surface chemical reactions is discussed. Fine grained, single phase PbTiO3 films have been deposited on MgO (100) and SiO2/Si substrates at substrate temperatures as low as 350°C. Films were characterized by XRD, SEM, and TEM. The results suggest that the chemical beam deposition technique provides another method for the fabrication and integration of ferroelectric thin films with silicon (or GaAs) devices.

PbTiO3 Thin Films by Chemical Beam Deposition

1990 ◽  
Vol 200 ◽  
Author(s):  
A.I. Kingon ◽  
K.Y. Hsieh ◽  
L.L.H. King ◽  
S.H. Rou ◽  
K.J. Bachmann ◽  
...  
Keyword(s):  
Thin Films ◽  
Vacuum Chamber ◽  
Substrate Surface ◽  
High Vacuum ◽  
Molecular Beams ◽  
Active Oxygen ◽  
Fine Grained ◽  
High Vacuum Chamber ◽  
Substrate Temperatures ◽  
Beam Deposition

ABSTRACTThe feasibility of chemical beam deposition of PbTiO3 thin films is demonstrated. The method utilizes chemical (molecular) beams of metalorganic precursors in a high vacuum chamber. Pyrolysis reactions of the metalorganics at the substrate surface are facilitated by presence of active oxygen from an ozone source. Fine grained, smooth polycrystalline PbTiO3 films have been deposited at substrate temperatures as low as 325°C.

Preparation and characterization of Bi2Ti2O7 thin films by chemical solution deposition technique

2000 ◽  
Vol 370 (1-2) ◽  
pp. 30-32 ◽  
Author(s):  
XianMing Wu ◽  
Sh.W. Wang ◽  
H. Wang ◽  
Z. Wang ◽  
S.X. Shang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Deposition Technique ◽  
Solution Deposition

Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

scholarly journals The role of hydrogen during plasma beam deposition of amorphous thin films

1995 ◽  
Vol 74-75 ◽  
pp. 1-9 ◽  
Author(s):  
M.C.M. van de Sanden ◽  
R.J. Severens ◽  
R.F.G. Meulenbroeks ◽  
M.J. de Graaf ◽  
Z. Qing ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Thin Films ◽  
Plasma Beam ◽  
Beam Deposition

XRD Investigation of Residual Stresses in Electron Beam Deposited Pt-V Coatings

2010 ◽  
Vol 652 ◽  
pp. 303-308
Author(s):  
T.P. Ntsoane ◽  
M. Topic ◽  
R. Bucher
Keyword(s):  
Mechanical Properties ◽  
Electron Beam ◽  
X Rays ◽  
Deposition Technique ◽  
Layer System ◽  
Si Substrates ◽  
Coating Morphology ◽  
Electron Beam Deposition ◽  
Beam Deposition ◽  
Star Detector

Platinum and platinum alloys, due to their good electrical and mechanical properties, are commonly used in fields such as jewellery, catalysis and electronics. In this work, a two-layer system of Pt and V, deposited on Si substrates by electron beam deposition technique, were investigated amongst others for residual stress development in the coating. The investigation was carried out using diffraction techniques employing laboratory X-rays on the BRUKER D8 Discover instrument equipped with a High Star detector and analyzed with LEPTOS v6 software. The results showed the stress state to be tensile, relaxing significantly on annealing. In addition, complementary results of phase composition, and coating morphology will also be presented.

In‐Situ Fabrication of YBa2Cu3O7‐x Superconducting Thin Films Directly on Silicon Substrates with Tc0 > 77K

1989 ◽  
Vol 169 ◽  
Author(s):  
C. B. Lee ◽  
R. K. Singh ◽  
S. Sharan ◽  
A. K. Singh ◽  
P. Tiwari ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Pulses ◽  
Superconducting Film ◽  
Laser Evaporation ◽  
Silicon Substrates ◽  
Superconducting Thin Films ◽  
Si Substrates ◽  
In Situ Fabrication ◽  
Substrate Temperatures

AbstractWe report in‐situ fabrication of c‐axis textured YBa2Cu3O7‐x superconducting thin films with Tco > 77K on unbuffered silicon substrates by the biased pulsed laser evaporation (PLE) technique in the temperature range of 550‐650°C. At substrate temperatures below 550°C, no c‐axis texturing of the superconducting film was observed. The YBa2Cu3O7‐x superconducting films were fabricated by ablating a bulk YBa2Cu3O7 target by a XeCl excimer laser (λ = 308 nm, τ = 45 × 10‐9 sec) in a chamber maintained at an oxygen pressure of 0.2 torr . The thickness of the films was varied from 0.3 to 0.5 nm depending on the number of laser pulses. Extensive diffusion was observed in thin films deposited at substrate temperatures above 550°C. However, microstructurally, with increase in the substrate temperature the films exhibited larger grain size and greater degree of c‐axis texturing (measured by the ratio of the (005) and (110) X‐ray diffraction peaks). This was found to give rise to better superconducting properties with Tco exceeding 77 K for YBa2Cu3O7‐x films deposited on Si substrates at 650°C.

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