Interaction of Cu and CoSi2

1990 ◽  
Vol 181 ◽  
Author(s):  
C. L. Shepard ◽  
W. A. Lanford ◽  
Y-T. Shy ◽  
S. Murarka
Keyword(s):  
Thin Film ◽  
Sheet Resistance ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy

ABSTRACTInteraction of thin film Cu and CoSi2 has been studied using Rutherford backscattering spectroscopy and sheet resistance measurements. For temperatures ≤ 600° C. , no measurable diffusion of Cu into CoSi2 is observed.

Characterization of Ruthenium Thin Film on Tantalum by Electrochemical Deposition: Rutherford Backscattering Spectroscopy

2011 ◽  
Vol 3 (6) ◽  
pp. 932-938 ◽  
Author(s):  
Minwu Song ◽  
Sadia Ameen ◽  
Dong-Gyu Kim ◽  
Hyung-Shik Shin ◽  
S. G. Ansari ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrochemical Deposition ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy

The Kinetics of Ni-Al Spinel Growth Using Rutherford Backscattering Spectroscopy

1987 ◽  
Vol 94 ◽  
Author(s):  
Y. Kouh Simpson ◽  
E. G. Colgan ◽  
C. B. Carter
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Single Crystal ◽  
Reaction Rate Constant ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Single Crystal Substrate ◽  
Crystal Substrate ◽  
Complementary Techniques ◽  
Kinetics Of

ABSTRACTUsing a planar thin-film specimen geometry, the growth kinetics of the spinel in NiOAl2O3 system has been studied with Rutherford backscattering spectroscopy. A thin-layer of Ni film is deposited by the electron-beam deposition technique onto single-crystal alumina substrates of different orientations including, (0001), {1120}, {1102} and {1100}. The subsequent heat-treatment in air then converts the Ni to NiO, thus producing a uniform layer of NiO with good adhesion between the NiO and the alumina. The kinetics of the Ni-Al spinel growth has been found to be different for different single-crystal substrate orientations. The kinetics behavior follows a parabolic growth-rate law for each orientation but shows a different reaction-rate constant. X-ray diffraction and transmission electron microscopy have been used as complementary techniques to confirm the phases that form at each stage of the heat treatment and the corresponding microstructures of the thin-film layers respectively.

Thin-film reactions of Au with Ti, Zr, V, and Nb

1987 ◽  
Vol 2 (1) ◽  
pp. 28-34 ◽  
Author(s):  
E. G. Colgan ◽  
J. W. Mayer
Keyword(s):  
Thin Film ◽  
Phase Diagrams ◽  
Intermetallic Phases ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Rich Phase ◽  
X Ray

The thin-film interactions of Au with Ti, Zr, V, and Nb have been investigated between 350C and 700°C with Rutherford backscattering spectroscopy (RBS) and x-ray diffraction (XRD). Initially the most Au-rich phase is formed, except. with V, and it is followed sequentially by the more metal-rich ones in an increasingly layer-by-layer fashion. For Au reactions on Ti and Nb, all the intermetallic phases on the phase diagrams were observed. In the formation of Au4Ti, Au is the dominant moving species.

Low Temperature Silicides for Poly-Silicon Thin Film Transistor Applications

1995 ◽  
Vol 402 ◽  
Author(s):  
G. T. Sarcona ◽  
M. K. Hatalis
Keyword(s):  
Thin Film ◽  
Sheet Resistance ◽  
Thin Film Transistor ◽  
Surface Preparation ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Cobalt Nickel ◽  
Silicon Materials ◽  
Cobalt Silicides ◽  
Matrix Liquid

AbstractThin films of cobalt, nickel, and tungsten were sputtered on three types of silicon materials to explore their potential for use as silicides in thin film transistor technologies for active matrix liquid crystal displays. The metals were sputtered onto single-crystal, polycrystalline, and amorphous silicon. The metals were annealed in vacuum after deposition over temperatures ranging from 250°C to 750°C. The sheet resistance of the resulting silicide films was measured using a four point probe apparatus. Cobalt silicides with sheet resistance of less than 4 Ω/ were formed at 600°C. Nickel produced films with sheet resistance below 10 Ω/▪ at 350°C, though the surface was required to be vacuum-clean. In this study, tungsten did not produce silicides. Surface preparation has been found to be an important factor in tungsten and nickel silicidation.

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