Characterization of Ruthenium Thin Film on Tantalum by Electrochemical Deposition: Rutherford Backscattering Spectroscopy

2011 ◽  
Vol 3 (6) ◽  
pp. 932-938 ◽  
Author(s):  
Minwu Song ◽  
Sadia Ameen ◽  
Dong-Gyu Kim ◽  
Hyung-Shik Shin ◽  
S. G. Ansari ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrochemical Deposition ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy

Interaction of Cu and CoSi2

1990 ◽  
Vol 181 ◽  
Author(s):  
C. L. Shepard ◽  
W. A. Lanford ◽  
Y-T. Shy ◽  
S. Murarka
Keyword(s):  
Thin Film ◽  
Sheet Resistance ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy

ABSTRACTInteraction of thin film Cu and CoSi2 has been studied using Rutherford backscattering spectroscopy and sheet resistance measurements. For temperatures ≤ 600° C. , no measurable diffusion of Cu into CoSi2 is observed.

Characterization of HfO2/Si(0 0 1) interface with high-resolution Rutherford backscattering spectroscopy

2004 ◽  
Vol 237 (1-4) ◽  
pp. 416-420 ◽  
Author(s):  
K. Nakajima ◽  
S. Joumori ◽  
M. Suzuki ◽  
K. Kimura ◽  
T. Osipowicz ◽  
...  
Keyword(s):  
High Resolution ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy

The Kinetics of Ni-Al Spinel Growth Using Rutherford Backscattering Spectroscopy

1987 ◽  
Vol 94 ◽  
Author(s):  
Y. Kouh Simpson ◽  
E. G. Colgan ◽  
C. B. Carter
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Single Crystal ◽  
Reaction Rate Constant ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Single Crystal Substrate ◽  
Crystal Substrate ◽  
Complementary Techniques ◽  
Kinetics Of

ABSTRACTUsing a planar thin-film specimen geometry, the growth kinetics of the spinel in NiOAl2O3 system has been studied with Rutherford backscattering spectroscopy. A thin-layer of Ni film is deposited by the electron-beam deposition technique onto single-crystal alumina substrates of different orientations including, (0001), {1120}, {1102} and {1100}. The subsequent heat-treatment in air then converts the Ni to NiO, thus producing a uniform layer of NiO with good adhesion between the NiO and the alumina. The kinetics of the Ni-Al spinel growth has been found to be different for different single-crystal substrate orientations. The kinetics behavior follows a parabolic growth-rate law for each orientation but shows a different reaction-rate constant. X-ray diffraction and transmission electron microscopy have been used as complementary techniques to confirm the phases that form at each stage of the heat treatment and the corresponding microstructures of the thin-film layers respectively.

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