Thin‐film interdiffusions in Cu/Pd, Cu/Pt, Cu/Ni, Cu/NiB, Cu/Co, Cu/Cr, Cu/Ti, and Cu/TiN bilayer films: Correlations of sheet resistance with Rutherford backscattering spectrometries

1991 ◽  
Vol 70 (6) ◽  
pp. 3052-3060 ◽  
Author(s):  
D.‐Y. Shih ◽  
C.‐A. Chang ◽  
J. Paraszczak ◽  
S. Nunes ◽  
J. Cataldo
Keyword(s):  
Thin Film ◽  
Sheet Resistance ◽  
Rutherford Backscattering ◽  
Bilayer Films

Interaction of Cu and CoSi2

1990 ◽  
Vol 181 ◽  
Author(s):  
C. L. Shepard ◽  
W. A. Lanford ◽  
Y-T. Shy ◽  
S. Murarka
Keyword(s):  
Thin Film ◽  
Sheet Resistance ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy

ABSTRACTInteraction of thin film Cu and CoSi2 has been studied using Rutherford backscattering spectroscopy and sheet resistance measurements. For temperatures ≤ 600° C. , no measurable diffusion of Cu into CoSi2 is observed.

Low Temperature Silicides for Poly-Silicon Thin Film Transistor Applications

1995 ◽  
Vol 402 ◽  
Author(s):  
G. T. Sarcona ◽  
M. K. Hatalis
Keyword(s):  
Thin Film ◽  
Sheet Resistance ◽  
Thin Film Transistor ◽  
Surface Preparation ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Cobalt Nickel ◽  
Silicon Materials ◽  
Cobalt Silicides ◽  
Matrix Liquid

AbstractThin films of cobalt, nickel, and tungsten were sputtered on three types of silicon materials to explore their potential for use as silicides in thin film transistor technologies for active matrix liquid crystal displays. The metals were sputtered onto single-crystal, polycrystalline, and amorphous silicon. The metals were annealed in vacuum after deposition over temperatures ranging from 250°C to 750°C. The sheet resistance of the resulting silicide films was measured using a four point probe apparatus. Cobalt silicides with sheet resistance of less than 4 Ω/ were formed at 600°C. Nickel produced films with sheet resistance below 10 Ω/▪ at 350°C, though the surface was required to be vacuum-clean. In this study, tungsten did not produce silicides. Surface preparation has been found to be an important factor in tungsten and nickel silicidation.

scholarly journals Study on the effect of growth-time and seed-layers of Zinc Oxide nanostructured thin film prepared by the hydrothermal method for liquefied petroleum gas sensor application

BIBECHANA ◽  
2018 ◽  
Vol 16 ◽  
pp. 145-153
Author(s):  
Guna Nidha Gnawali ◽  
Shankar P Shrestha ◽  
Khem N Poudyal ◽  
Indra B Karki ◽  
Ishwar Koirala
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Gas Sensor ◽  
Sheet Resistance ◽  
Measurement Unit ◽  
Growth Time ◽  
Zno Nanostructures ◽  
Liquefied Petroleum Gas ◽  
Nanostructured Thin Film ◽  
Seed Layers

Gas sensors are devices that can convert the concentration of an analytic gas into an electronic signal. Zinc oxide (ZnO) is an important n-type metal oxide semiconductor which has been utilized as gas sensor for several decades. In this work, ZnO nanostructured films were synthesized by a hydrothermal route from ZnO seeds and used as a liquefied petroleum gas (LPG) sensor. At first ZnO seed layers were deposited on glass substrates by using spin coating method, then ZnO nanostructured were grown on these substrates by using hydrothermal growth method for different time duration. The effect of growth time and seed layers of ZnO nanostructured on its structural, optical, and electrical properties was studied. These nanostructures were characterized by X-ray diffraction, scanning electron microscopy, optical spectroscopy, and four probes sheet resistance measurement unit. The sensing performances of the synthetic ZnO nanostructures were investigated for LPG.XRD showed that all the ZnO nanostructures were hexagonal crystal structure with preferential orientation. SEM reviled that the size of nanostructure increased with increase in growth time. Band gap and sheet resistance for ZnO nanostructured thin film decreased with increase in growth time. ZnO nanostructured thin film showed high sensitivity towards LPG gas. The sensitivity of the film is observed to increase with increase in no of seed layers as well as growth time. The dependence of the LPG sensing properties on the different growth time of ZnO nanostructured was investigated. The sensing performances of the film were investigated by measured change in sheet resistance under expose to LPG gas. BIBECHANA 16 (2019) 145-153

Remote measurement of thin film sheet resistance

1971 ◽  
Vol 4 (12) ◽  
pp. 1078-1079
Author(s):  
J C Mitchinson ◽  
R D Pringle
Keyword(s):  
Thin Film ◽  
Sheet Resistance ◽  
Remote Measurement

Sheet Resistance in Thin Film Solid Oxide Fuel Cell Model Cathodes: A Case Study on Circular Bi1-xSrxFeO3-  Microelectrodes

2012 ◽  
Vol 45 (1) ◽  
pp. 213-224 ◽  
Author(s):  
A. Wedig ◽  
M. E. Lynch ◽  
R. Merkle ◽  
J. Maier ◽  
M. Liu
Keyword(s):  
Thin Film ◽  
Fuel Cell ◽  
Solid Oxide Fuel Cell ◽  
Sheet Resistance ◽  
Cell Model ◽  
Solid Oxide ◽  
Oxide Fuel
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