Direct Writing Using Laser Chemical Vapor Deposition

1982 ◽  
Vol 17 ◽  
Author(s):  
S. D. Allen ◽  
A. B. Trigubo ◽  
R. Y. Jan
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Semiconductor Films ◽  
Direct Writing ◽  
Laser Chemical Vapor Deposition ◽  
Si Substrates ◽  
Visible Laser ◽  
Laser Sources ◽  
Transmission And Reflection

ABSTRACTMetal, dielectric and semiconductor films have been deposited by laser chemical vapor deposition (LCVD) using both pulsed and cw laser sources on a variety of substrates. For LCVD on substrates such as quartz, the deposition was monitored optically in both transmission and reflection using a collinear visible laser and the depositing CO2 laser. Deposition initiation and rate were correlated with irradiation conditions, the laser generated surface temperature, and the changing optical properties of the filmpsubstrate during deposition. Single crystallites of W greater than 100 pm tall were deposited using a Kr laser on Si substrates.

Laser Chemical Vapor Deposition of W on Si and SiO2/Si

1989 ◽  
Vol 158 ◽  
Author(s):  
Jian-Yang Lin ◽  
Susan D. Allen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Spectroscopic Analysis ◽  
Chemical Vapor ◽  
Direct Write ◽  
Laser Chemical Vapor Deposition ◽  
Si Substrates ◽  
Auger Electron Spectroscopic Analysis ◽  
Laser Direct Write ◽  
Rate Controlling Step

ABSTRACTDirect write of W on bare Si and native SiO2/Si substrates has been investigated in an laser chemical vapor deposition (LCVD) system. W deposits on bare Si surface via the Si and/or H2 reduction of WF6 were self-limited in thickness to 200 - 600 Å in both cases. Auger electron spectroscopic analysis showed that Si-H bonds could be poisoning the further growth of W. W deposits on native SiO2/Si were only obtainable via the H2 reduction of WF6 in our laser direct-write system. Our experimental kinetic study indicated that HF desorption from the surface is the rate-controlling step for W deposition via the H2 reduction of WF6. The as-deposited W line deposits were 2 - 10 μm wide, 0.2 - 6 μm thick with resistiiities in the range of 11 - 56 μΩ-cm. Growth rates as high as 2.2 mm/s have been achieved.

High‐speed laser chemical vapor deposition of copper: A search for optimum conditions

1989 ◽  
Vol 65 (6) ◽  
pp. 2470-2474 ◽  
Author(s):  
B. Markwalder ◽  
M. Widmer ◽  
D. Braichotte ◽  
H. van den Bergh
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Speed ◽  
Chemical Vapor ◽  
Optimum Conditions ◽  
Laser Chemical Vapor Deposition
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