Laser Chemical Vapor Deposition of W on Si and SiO2/Si

1989 ◽  
Vol 158 ◽  
Author(s):  
Jian-Yang Lin ◽  
Susan D. Allen

ABSTRACTDirect write of W on bare Si and native SiO2/Si substrates has been investigated in an laser chemical vapor deposition (LCVD) system. W deposits on bare Si surface via the Si and/or H2 reduction of WF6 were self-limited in thickness to 200 - 600 Å in both cases. Auger electron spectroscopic analysis showed that Si-H bonds could be poisoning the further growth of W. W deposits on native SiO2/Si were only obtainable via the H2 reduction of WF6 in our laser direct-write system. Our experimental kinetic study indicated that HF desorption from the surface is the rate-controlling step for W deposition via the H2 reduction of WF6. The as-deposited W line deposits were 2 - 10 μm wide, 0.2 - 6 μm thick with resistiiities in the range of 11 - 56 μΩ-cm. Growth rates as high as 2.2 mm/s have been achieved.

1988 ◽  
Vol 129 ◽  
Author(s):  
Robert F. Miracky

ABSTRACTLaser direct-write processes are attractive complements to traditional methods of fabricating microelectronic circuitry. This paper is a summary of our work in applying such processes to high-density inter-chip interconnection modules, such as those using copper conductors on polyimide dielectric layers. We begin by discussing the requirements which laser processes must satisfy in order to be useful in this application. An analytical model of laser heating is then described, which aids in understanding the thermal problem of absorption of visible-wavelength laser light by polyimide. Calculations using this model are consistent with experimental observations. Finally, we focus on one laser processing technique: laser chemical vapor deposition. We describe a new process for laser chemical vapor deposition of tungsten on polyimide, which enables the formation of low resistance contacts (≈ 0.1 Ω) between the deposited tungsten films and pre-patterned nickel-coated copper conductors. Lines approximately 30 /m wide and 34 µm thick were deposited at a scan rate of 93 µm/s. From four-point resistance measurements of different lengths of deposited films, the tungsten film resistivity is estimated to be two to three times the bulk value.


1982 ◽  
Vol 17 ◽  
Author(s):  
S. D. Allen ◽  
A. B. Trigubo ◽  
R. Y. Jan

ABSTRACTMetal, dielectric and semiconductor films have been deposited by laser chemical vapor deposition (LCVD) using both pulsed and cw laser sources on a variety of substrates. For LCVD on substrates such as quartz, the deposition was monitored optically in both transmission and reflection using a collinear visible laser and the depositing CO2 laser. Deposition initiation and rate were correlated with irradiation conditions, the laser generated surface temperature, and the changing optical properties of the filmpsubstrate during deposition. Single crystallites of W greater than 100 pm tall were deposited using a Kr laser on Si substrates.


1989 ◽  
Vol 65 (6) ◽  
pp. 2470-2474 ◽  
Author(s):  
B. Markwalder ◽  
M. Widmer ◽  
D. Braichotte ◽  
H. van den Bergh

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