The interdiffusion of Cu, Co and Au Thin Films at elevated temperatures

1989 ◽  
Vol 167 ◽  
Author(s):  
Peter Madakson ◽  
Joyce C. Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Elevated Temperatures ◽  
Higher Temperature ◽  
Au Thin Films ◽  
Au Thin Film

AbstractA detailed study of the interdiffusion and resistivity of Cu/Au, Cu/Co/ Co/Au and Cu/Co/Au thin film structures was carried out at temperatures ranging from 25 to 550°C1. Both Cu and Au, in the Cu/Au structure, intermix readily even at temperatures as low as 150°C and the interdiffusion is accompanied by rapid increase in resistivity. Very little interdiffusion occurs in the Cu/Co, Co/Au or Cu/Co/Au thin film structures up to about 400°C, after which the resistivity increases. The very rapid increase in resistivity observed at 250°C for the Cu/Au system and at 450°C for Cu/Co/Au, is associated with recrystallization of the films into large grains and the formation of AuCu, Cu3Au and Cu3Au2 compounds. The Cu/Co/Au structure recrystallizes at a higher temperature because of the time needed for Cu and Au to diffuse through the Co layer, which did not react significantly with either Au or Cu.

On the Characterization of Thin Film-only Mechanical Property Based on the Indentation Image Analysis

2006 ◽  
Vol 976 ◽  
Author(s):  
Yun-Hee Lee ◽  
Yong-Il Kim ◽  
Hoon-Sik Jang ◽  
Seung-Hoon Nahm ◽  
Ju-Young Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Penetration Depth ◽  
Volume Ratio ◽  
Hardness Measurement ◽  
Relative Depth ◽  
Au Thin Films ◽  
Film Substrate ◽  
Indenter Penetration

AbstractConventional nanoindentation testing generally uses a peak penetration depth of less than 10 % of thin-film thickness in order to measure film-only mechanical properties, without considering the critical depth for a given thin film-substrate system. The uncertainties in this testing condition make hardness measurement more difficult. We propose a new way to determine the critical relative depth for general thin-film/substrate systems; an impression volume analyzed from the remnant indent image is used here as a new parameter. Nanoindents made on soft Cu and Au thin films with various indentation loads were observed by atomic force microscope. The impression volume calculated from 3D remnant image was normalized by the indenter penetration volume. This indent volume ratio varied only slightly in the shallow regime but decreased significantly when the indenter penetration depth exceeded the targeted critical relative depth. Thus, we determined the critical relative depth by empirically fitting the trend of the indent volume ratio and determining the inflection point. The critical relative depths for Cu and Au films were determined as 0.170 and 0.173, respectively, values smaller than 0.249 and 0.183 determined from the hardness variation of the two thin films. Hence the proposed indent volume ratio is highly sensitive to the substrate constraint, and stricter control of the penetration depth is needed to measure film-only mechanical properties.

Substantiation of a Technique of Determining Stress in Thin Films at Very Low Temperatures

2015 ◽  
Vol 14 ◽  
pp. 28-36
Author(s):  
C.C. Chama
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperatures ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
High Temperature Stress ◽  
Hysteresis Curves ◽  
Stress Hysteresis

Substantiation of a technique earlier employed in determining stress in Copper-Silver thin films at very low temperatures is presented. It is shown that the stress measured at elevated temperatures using Stoney’s equation can be utilized in the determination of stress at very low temperatures. To demonstrate the application of this technique, a case study has been conducted by utilizing stress hysteresis curves obtained from the Cu-6at%Ag thin film heated from room temperature to 400°C and cooled back to room temperature in two cycles. The stresses in the Cu-6at%Ag thin film at various low temperatures up to-197°C have been determined by utilizing data from high temperature stress hysteresis curves.

Strain induced super-paramagnetism in Cr2O3 in the ultra thin film limit

2015 ◽  
Vol 1729 ◽  
pp. 79-83 ◽  
Author(s):  
Iori Tanabe ◽  
Haseeb Kazi ◽  
Yuan Cao ◽  
Jack L Rodenburg ◽  
Takashi Komesu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Ordering ◽  
Hysteresis Effect ◽  
Strain Effect ◽  
Temperature Hysteresis ◽  
Antiferromagnetic Ordering ◽  
Show Evidence ◽  
Higher Temperature ◽  
Ultra Thin Film

ABSTRACTUltra thin films of chromia (Cr2O3), less than 3 nm thick, grown epitaxial on α-Al2O3 (sapphire), and are thus compressively strained in-plane. The resulting films show evidence of some magnetic ordering above the Néel temperature of chromia (307 K). The observed higher temperature hysteresis effect observed are very likely a strain effect, and not associated with the typical antiferromagnetic ordering expected of chromia.

Study Of The Growth Mechanisms of NbS2 Scales Using Marker Experiments

1991 ◽  
Vol 222 ◽  
Author(s):  
Chuxin Zhou ◽  
L. W. Hobbs
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Growth Mechanisms ◽  
Depth Profiles ◽  
Scanning Auger Microscopy ◽  
Dominant Process ◽  
Au Thin Films ◽  
Auger Microscopy

ABSTRACTABSTRACT Au thin films were deposited using electron beam evaporation onto the surface of Nb metal to serve as thin film markers to study the growth mechanisms of NbS2 scales. Scanning Auger microscopy (SAM) was used to measure the depth profiles for the compositions of Au, Nb, S, Si and O across the sulfide scale. Three other marker experiments were also studied. All four marker experiments indicated that the inward diffusion of sulfur is the dominant process responsible for the growth of NbS2 scales.

scholarly journals Micro Fabrication of Au Thin-Film by Transfer-Printing Using Atomic Diffusion Bonding

2019 ◽  
Vol 13 (6) ◽  
pp. 810-816
Author(s):  
Arata Kaneko ◽  
◽  
Taira Katayama ◽  
Shun Morishita
Keyword(s):  
Thin Film ◽  
Diffusion Bonding ◽  
Atomic Diffusion ◽  
Transfer Printing ◽  
Soft Contact ◽  
Pdms Stamp ◽  
Wide Line ◽  
Au Thin Films ◽  
Line Patterns ◽  
Au Thin Film

Transfer printing of a thin film is a great candidate technique for micro/nanofabrication for microelectromechanical system (MEMS) elements. The authors propose a technique to apply atomic diffusion bonding to transfer printing of a gold (Au) thin film. When a substrate is previously coated with Au thin film as an adhesive, another Au thin film can be transfer-printed from a h-PDMS stamp to the substrate. It enables 50 μm-wide line patterns of the Au thin film located on the Au-coated Si substrate, whereas the Au thin film cannot be transfer-printed on a bare (uncoated) Si surface. The interface between two Au thin films disappears after transfer printing; hence, the Au atoms can interdiffuse from one to another to make a strong bonding. This process can be performed with a soft contact without any pressure in atmospheric and vacuum conditions. In the case of Au, the atoms can interdiffuse around a contacted area at room temperature. Moreover, one can make 50 μm-wide line patterns by 1 min of transfer printing and that of 24 h. The proposed process makes the line patterns of the Au thin film transfer-printed to be a bridged microbeam over the grooves when a prestructured (grooved) substrate is prepared.

Mechanical Behavior of Nanocrystalline Cu Alloy Thin Film on Elastomer Substrates Under Constant Uniaxial Tensile Strain

2006 ◽  
Vol 976 ◽  
Author(s):  
Junya Inoue ◽  
Yousuke Fujii ◽  
Toshihiko Koseki
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Behavior ◽  
Tensile Strain ◽  
Elevated Temperatures ◽  
Thin Metal Film ◽  
Uniaxial Tensile ◽  
Radius Of Curvature ◽  
Alloy Thin Film ◽  
Cu Alloy

AbstractIn this study, mechanical behavior of nanocrystalline Cu alloy thin films under constant tensile strain is studied, by taking advantage of the enhanced resistance to strain localization of a thin metal film on a thick elastomer with appropriate Young's modulus. Cu and Cu alloy thin films with a thickness of 100nm were deposited on heat-resistant polyimide substrates. On the top of the Cu alloy layer, Ta thin film was further deposited to suppress the surface diffusion of Cu alloy. A uniform uniaxial tensile strain was induced to the films by applying a constant radius of curvature to the polyimide substrate. Isothermal deformation and rupture modes of the films were studied by keeping the samples at various elevated temperatures. Microstructural observation was carried out using SEM, TEM, STEM, and confocal violet laser microscope at several stages of deformation. From the observation, the evolution of damage in the sub-critical strain level and the effect of alloying elements are discussed.

Effect of High Temperature Stress on Titanium-Tungsten Gold thin Films on Alumina

1991 ◽  
Vol 239 ◽  
Author(s):  
Wei H. Koh ◽  
W. Louie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Temperature ◽  
Base Metal ◽  
Temperature Stress ◽  
High Temperature Stress ◽  
Grain Structure ◽  
Metal Thin Films ◽  
Fine Grain ◽  
Au Thin Film

ABSTRACTThe adhesion of a sputtered titanium-tungsten gold (Ti-W/Au) thin film on alumina substrates is found to be weakened after being stressed at temperatures above 575°C, due to depletion of the Ti-W base metal. Thin films deposited on substrates having a fine grain structure and as fired surfaces, however, maintained their adherence at temperatures up to 650°C.

Crystallization and Reconstructive Layer Transformation of a-Si/Au Multilayer Thin Films under a Strong Gravitational Field

2015 ◽  
Vol 363 ◽  
pp. 156-163
Author(s):  
Yoichi Okamoto ◽  
Masami Aono ◽  
Hisashi Miyazaki ◽  
Yudai Ogata ◽  
Makoto Tokuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Structure ◽  
Recrystallization Temperature ◽  
Recrystallization Process ◽  
Metal Induced Crystallization ◽  
Strong Gravity ◽  
Lower Annealing Temperature ◽  
Au Thin Films ◽  
Si Thin Film

There were still unclear questions in the new method that fabricate the high quality poly crystalline Si thin film from amorphous Si thin film with lower annealing temperature than conventional Si recrystallization temperature. In that recrystallization process, the recrystallization mechanism was generally explained by the MIC (Metal Induced Crystallization) of Au. In this paper, we have discussed the effects of film structure and strong gravity on recrystallization, by using conventional furnace and high-temperature ultracentrifuge furnace system. The five kinds of samples (two bilayered Si/Au thin films, two multilayered Si/Au thin films and trilayered Si/Au/Si thin film) and found the effects of structure and strong gravity. The best for crystallization was Au/Si multilayered thin film, which is almost finished to crystallize even at 673 K annealing. The strong gravity advanced and retreated the crystallization, depending to thin film structure.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

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