Effect of High Temperature Stress on Titanium-Tungsten Gold thin Films on Alumina

1991 ◽  
Vol 239 ◽  
Author(s):  
Wei H. Koh ◽  
W. Louie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Temperature ◽  
Base Metal ◽  
Temperature Stress ◽  
High Temperature Stress ◽  
Grain Structure ◽  
Metal Thin Films ◽  
Fine Grain ◽  
Au Thin Film

ABSTRACTThe adhesion of a sputtered titanium-tungsten gold (Ti-W/Au) thin film on alumina substrates is found to be weakened after being stressed at temperatures above 575°C, due to depletion of the Ti-W base metal. Thin films deposited on substrates having a fine grain structure and as fired surfaces, however, maintained their adherence at temperatures up to 650°C.

Assessment of wheat (Triticum aestivum L.) genotypes for high temperature stress tolerance using physico-chemical analysis

2020 ◽  
Vol 53 (2) ◽  
Author(s):  
Khalil Ahmed Laghari ◽  
Abdul Jabbar Pirzada ◽  
Mahboob Ali Sial ◽  
Muhammad Athar Khan ◽  
Jamal Uddin Mangi
Keyword(s):  
Triticum Aestivum ◽  
High Temperature ◽  
Chemical Analysis ◽  
Stress Tolerance ◽  
Temperature Stress ◽  
Triticum Aestivum L ◽  
High Temperature Stress ◽  
Physico Chemical

Genome-wide identification and analysis of maize PAL gene family and its expression profile in response to high-temperature stress

2020 ◽  
Vol 52 (5) ◽  
Author(s):  
De-Gong Wu ◽  
Qiu-Wen Zhan ◽  
Hai-Bing Yu ◽  
Bao-Hong Huang ◽  
Xin-Xin Cheng ◽  
...  
Keyword(s):  
High Temperature ◽  
Gene Family ◽  
Temperature Stress ◽  
Expression Profile ◽  
High Temperature Stress ◽  
Genome Wide

Impact of Metal Pad Etch-Induced Plasma Damage on Dynamic Retention Time Degradation during High Temperature Stress in High Density DRAM Technology

2005 ◽  
Author(s):  
D-J Kim ◽  
I-G Kim ◽  
J-Y Noh ◽  
H-J Lee ◽  
S-H Park ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
Retention Time ◽  
High Temperature Stress ◽  
High Density ◽  
Cell Junction ◽  
Antenna Effect ◽  
Plasma Damage ◽  
Root Cause ◽  
Wafer Processing

Abstract As DRAM technology extends into 12-inch diameter wafer processing, plasma-induced wafer charging is a serious problem in DRAM volume manufacture. There are currently no comprehensive reports on the potential impact of plasma damage on high density DRAM reliability. In this paper, the possible effects of floating potential at the source/drain junction of cell transistor during high-field charge injection are reported, and regarded as high-priority issues to further understand charging damage during the metal pad etching. The degradation of block edge dynamic retention time during high temperature stress, not consistent with typical reliability degradation model, is analyzed. Additionally, in order to meet the satisfactory reliability level in volume manufacture of high density DRAM technology, the paper provides the guidelines with respect to plasma damage. Unlike conventional model as gate antenna effect, the cell junction damage by the exposure of dummy BL pad to plasma, was revealed as root cause.

Effect of high temperature stress on seed filling and nutritional quality of rice (Oryza sativa L.)

2020 ◽  
Vol 16 (2) ◽  
pp. 18-23
Author(s):  
K. PRAVALLIKA ◽  
C. ARUNKUMAR ◽  
A. VIJAYKUMAR ◽  
R. BEENA ◽  
V. G. JAYALEKSHMI
Keyword(s):  
Oryza Sativa ◽  
High Temperature ◽  
Temperature Stress ◽  
Nutritional Quality ◽  
High Temperature Stress ◽  
Seed Filling

scholarly journals Wheat (Triticum aestivum L.) TaHMW1D Transcript Variants Are Highly Expressed in Response to Heat Stress and in Grains Located in Distal Part of the Spike

Plants ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 687
Author(s):  
Chan Seop Ko ◽  
Jin-Baek Kim ◽  
Min Jeong Hong ◽  
Yong Weon Seo
Keyword(s):  
Heat Stress ◽  
High Temperature ◽  
Temperature Stress ◽  
Storage Proteins ◽  
Seed Storage ◽  
Seed Storage Proteins ◽  
Grain Filling ◽  
High Temperature Stress ◽  
Two Dimensional Gel Electrophoresis ◽  
Transcript Variants

High-temperature stress during the grain filling stage has a deleterious effect on grain yield and end-use quality. Plants undergo various transcriptional events of protein complexity as defensive responses to various stressors. The “Keumgang” wheat cultivar was subjected to high-temperature stress for 6 and 10 days beginning 9 days after anthesis, then two-dimensional gel electrophoresis (2DE) and peptide analyses were performed. Spots showing decreased contents in stressed plants were shown to have strong similarities with a high-molecular glutenin gene, TraesCS1D02G317301 (TaHMW1D). QRT-PCR results confirmed that TaHMW1D was expressed in its full form and in the form of four different transcript variants. These events always occurred between repetitive regions at specific deletion sites (5′-CAA (Glutamine) GG/TG (Glycine) or (Valine)-3′, 5′-GGG (Glycine) CAA (Glutamine) -3′) in an exonic region. Heat stress led to a significant increase in the expression of the transcript variants. This was most evident in the distal parts of the spike. Considering the importance of high-molecular weight glutenin subunits of seed storage proteins, stressed plants might choose shorter polypeptides while retaining glutenin function, thus maintaining the expression of glutenin motifs and conserved sites.

Ionic Conductivities of Doped CeO2 Thin Films as Related to Their Microstructure

1995 ◽  
Vol 411 ◽  
Author(s):  
Chunyan Tian ◽  
Siu-Wai Chan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ionic Conductivities ◽  
Dielectric Constants ◽  
Grain Structure ◽  
X Ray Diffraction ◽  
Fine Grain ◽  
Brick Layer Model ◽  
Columnar Grain ◽  
Beam Deposition

ABSTRACTThin films of 4% Y2O3 doped CeO2/Pd film/(001)LaA103 with a very low pinhole density were successfully prepared using electron-beam deposition technique. The microstructure of the films was characterized by x-ray diffraction and the electrical properties were studied as a function of temperature with AC impedance spectroscopy. A brick layer model was adopted to correlate the electrical properties to the microstructure of the films, which can be simplified as either a series or a parallel equivalent circuit associated with either a fine grain or a columnar grain structure, respectively. The conductivities of the films fell between the conductivities derived from the two circuit models, suggesting that the films are of a mixed fine grain and columnar grain structure. The measured dielectric constants of the films were found smaller than that of the bulk.

Impact of high temperature stress on ascorbic acid concentration in tomato

2018 ◽  
pp. 985-990
Author(s):  
V. Hernández ◽  
P. Hellín ◽  
J. Fenoll ◽  
M.V. Molina ◽  
I. Garrido ◽  
...  
Keyword(s):  
Ascorbic Acid ◽  
High Temperature ◽  
Temperature Stress ◽  
Acid Concentration ◽  
High Temperature Stress ◽  
Ascorbic Acid Concentration
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