Ftir Investigations of Plasma Modified Polymer Surfaces and Their Interfaces with Plasma Deposited Tungsten

1989 ◽  
Vol 165 ◽  
Author(s):  
Jihperng Leu ◽  
Manoj Dalvie ◽  
Klavs F. Jensen
Keyword(s):  
Microwave Plasma ◽  
Polymer Surface ◽  
Chemical Vapor ◽  
Surface Modifications ◽  
Polymer Surfaces ◽  
Ex Situ ◽  
Rf Plasma ◽  
Polyimide Films ◽  
Modified Polymer ◽  
Surface Fluorination

AbstractSurface modifications of thin polyimide films (100–2000 A˚) in downstream microwave CF4/NF3/Ar plasmas and radio-frequency (RF) CF4 plasmas have been studied in situ by Fourier transform infrared (FTIR) reflection-absorption spectroscopy. The downstream microwave plasma treatment produced significant surface fluorination in terms of polyfluorinated alkyl and aryl compounds as well as acyl and benzoyl fluorides. The depth of fluorination was approximately 500 Å. Similar changes in polymer surface functionalities were observed for RF plasma surface modifications, but the depth of fluorination was reduced to 30Å because of ion-bombardment. The interface between the tungsten film and polyimide surfaces has been characterized by ex situ FTIR reflection-absorption technique through the silicon side of Si/polymer/W structures. The observed spectral changes relative to polyimide-gold interfaces were interpreted in terms of interactions of tungsten with functionalities of the polyimde backbone. Tungsten deposited by both sputtering and plasma enhanced chemical vapor deposition (PECVD) showed significant chemical interactions, strongest for PECVD tungsten.

In Situ Ftir Investigations of Polymer Surface Modification in Downstream Microwave Plasma Etching

1989 ◽  
Vol 153 ◽  
Author(s):  
Jihperng Leu ◽  
K.F. Jensen
Keyword(s):  
Plasma Treatment ◽  
Microwave Plasma ◽  
Polymer Surface ◽  
Absorption Bands ◽  
Air Exposure ◽  
Modified Polymers ◽  
Treatment Conditions ◽  
Fluorine Compounds ◽  
Surface Fluorination

AbstractIn situ Fourier transform infrared (FTIR) reflection-absorption spectroscopy investigations of etching of thin polyimide and poly(methyl methacrylate) films (200-1500Å) in downstream microwave NF3/O2/Ar plasmas are reported. Etch rates and surface chemistry are monitored as a function of gas phase composition, plasma treatment conditions and time. NF3/Ar plasma treatment leads to significant surface fluorination characterized by the formation of aliphatic fluorine compounds (CFx), acyl fluorides, benzoyl fluoride, and polyfluorinated benzene. Addition of oxygen to the etching gas reduces the degree of surface fluorination and modifies the chemical structure. The absorption bands due to CFx structures decrease gradually while polyfluorinated benzene rings and benzoyl fluoride are absent for NF3/O2 mixtures with more than 20% oxygen. The effect of humidity on the plasma-modified polymers is studied by comparing infrared spectra collected in situ with those after air exposure. For NF3/O2 plasma-treated polyimides significant changes are observed while samples fluorinated in NF3 show no changes after exposure to air overnight. The FTIR data are supplemented by XPS analysis.

Polymer-Surface Modification with a-C:N:H Layers Plasma Chemically Deposited in RF CVD and MW CVD Systems

2010 ◽  
Vol 165 ◽  
pp. 159-164
Author(s):  
Karol Przetakiewicz ◽  
Katarzyna Tkacz-Śmiech ◽  
Piotr Boszkowicz ◽  
Stanisława Jonas
Keyword(s):  
Polymer Surface ◽  
Chemical Vapor ◽  
Polymer Surfaces ◽  
Chemical Vapor Deposition Method ◽  
Technological Parameters ◽  
Ft Ir ◽  
Series Of Experiments ◽  
Ar Plasma ◽  
Nitride Layers

The paper demonstrates that polymer surface may be modified by means of carbon nitride layers (a C:N:H) formed by Plasma Enhanced Chemical Vapor Deposition method. The layers were deposited from CH4/N2/Ar plasma generated by radio-frequency waves (13.56 MHz) and microwaves (2.45 GHz). A series of experiments enabled determination of technological parameters appropriate to deposit well-adhering and high quality layers on PC, Plexi and PET surfaces. The obtained layers were subjected to structural and chemical composition studies employing energy dispersive X-ray spectroscopy (EDS) and Fourier transform infrared spectroscopy (FT IR) techniques. It was established that roughness parameters of the samples with layers were visibly lower than the parameters characterizing the surfaces after pre-treating with Ar plasma and remained on the same level or were slightly lower than those for raw polymer surfaces.

In Situ FTIR Investigations Of Polymer Surface Modification In Downstream Microwave Plasma Etching

1989 ◽  
Vol 154 ◽  
Author(s):  
Jihperng Leu ◽  
K.F. Jensen
Keyword(s):  
Plasma Treatment ◽  
Microwave Plasma ◽  
Polymer Surface ◽  
Absorption Bands ◽  
Air Exposure ◽  
Modified Polymers ◽  
Treatment Conditions ◽  
Fluorine Compounds ◽  
Surface Fluorination

AbstractIn situ Fourier transform infrared (FTIR) reflection-absorption spectroscopy investigations of etching of thin polyimide and poly(methyl methacrylate) films (200–1500Å) in downstream microwave NF3/O2/Ar plasmas are reported. Etch rates and surface chemistry are monitored as a function of gas phase composition, plasma treatment conditions and time. NF3/Ar plasma treatment leads to significant surface fluorination characterized by the formation of aliphatic fluorine compounds (CFx), acyl fluorides, benzoyl fluoride, and polyfluorinated benzene. Addition of oxygen to the etching gas reduces the degree of surface fluorination and modifies the chemical structure. The absorption bands due to CFx structures decrease gradually while polyfluorinated benzene rings and benzoyl fluoride are absent for NF3/O2 mixtures with more than 20% oxygen. The effect of humidity on the plasma-modified polymers is studied by comparing infrared spectra collected in situ with those after air exposure. For NF3/O2 plasma-treated polyimides significant changes are observed while samples fluorinated in NF3 show no changes after exposure to air overnight. The FTIR data are supplemented by XPS analysis.

Plasma-Enhanced Surface Modification of Biopolymers

2005 ◽  
Author(s):  
K. Komvopoulos
Keyword(s):  
Surface Modification ◽  
Effective Means ◽  
Polymer Surface ◽  
Chemical Properties ◽  
Biochemical Properties ◽  
Polymer Surfaces ◽  
Polymer Materials ◽  
Rf Plasma ◽  
Main Process ◽  
Enhanced Surface

Recent advances in polymer surface science have been largely due to the well-recognized need to control the surface properties of polymer materials and the development of sophisticated surface-specific characterization techniques. While the majority of the research and development efforts have been mostly focused on bulk properties, demands for low surface energy polymers exhibiting low adhesion (friction) and good biocompatibility have generated significant interest on physical and chemical properties of polymer surfaces. For instance, ultra-high molecular weight polyethylene (UHMWPE) and low-density polyethylene (LDPE) are the principal materials used to replace damaged cartilage in total joint arthroplasty and to fabricate catheters for balloon angioplasty, respectively. Therefore, surface treatments to improve adhesion and biocompatibility of these polymer surfaces are of paramount importance in the medical field. Radio frequency (rf) plasma-enhanced surface modification (PESM) provides an effective means for altering the biochemical properties of polymer surfaces without affecting the bulk behavior. The main process steps of PESM are discussed here and its effectiveness is demonstrated by representative friction coefficient, contact angle, and biocompatibility results for LDPE and UHMWPE surfaces treated with various plasma chemistries.

In situ growth rate measurement and nucleation enhancement for microwave plasma CVD of diamond

1992 ◽  
Vol 7 (2) ◽  
pp. 257-260 ◽  
Author(s):  
B.R. Stoner ◽  
B.E. Williams ◽  
S.D. Wolter ◽  
K. Nishimura ◽  
J.T. Glass
Keyword(s):  
Growth Rate ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Diamond Particle ◽  
Chemical Vapor ◽  
Processing Parameters ◽  
Ex Situ ◽  
Particle Nucleation ◽  
Cross Sectional

Laser reflection interferometry (LRI) has been shown to be a useful in situ technique for measuring growth rate of diamond during microwave plasma chemical vapor deposition (MPCVD). Current alternatives to LRI usually involve ex situ analysis such as cross-sectional SEM or profilometry. The ability to measure the growth rate in ‘real-time’ has allowed the variation of processing parameters during a single deposition and thus the extraction of much more information in a fraction of the time. In situ monitoring of growth processes also makes it possible to perform closed loop process control with better reproducibility and quality control. Unfortunately, LRI requires a relatively smooth surface to avoid surface scattering and the commensurate drop in reflected intensity. This problem was remedied by greatly enhancing the diamond particle nucleation via the deposition of an intermediate carbon layer using substrate biasing. When an unscratched silicon wafer is pretreated by biasing negatively relative to ground while in a methane-hydrogen plasma, nucleation densities much higher than those achieved on scratched silicon wafers are obtained. The enhanced nucleation allows a complete film composed of small grains to form in a relatively short time, resulting in a much smoother surface than is obtained from a film grown at lower nucleation densities.

Characterization of homoepitaxial diamond films by Electron microscopy

1991 ◽  
Vol 49 ◽  
pp. 880-881
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Large Degree ◽  
Rf Plasma ◽  
Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

Preparation of Magnesia Stabilized Zirconia Thin Films for Solid Oxide Fuel Cell by Microwave Plasma Chemical Vapor Deposition.

Shinku ◽  
1997 ◽  
Vol 40 (8) ◽  
pp. 660-663
Author(s):  
Hideo OKAYAMA ◽  
Tsukasa KUBO ◽  
Noritaka MOCHIZUKI ◽  
Akiyoshi NAGATA ◽  
Hiromu ISA
Keyword(s):  
Thin Films ◽  
Fuel Cell ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
Stabilized Zirconia ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

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