The Role of Low-Energy Ion/Surface Interactions During Crystal Growth from the Vapor Phase: Effects on Microchemistry and Microstructure

1989 ◽  
Vol 165 ◽  
Author(s):  
J. E. Greene ◽  
J.-E. Sundgren

Low-energy (≤ 200 eV) ion irradiation during crystal growth from the vapor phase can be used to provide new chemical reaction pathways, modify film-growth kinetics, and, hence, controllably alter the physical properties of films deposited by a variety of techniques. The latter includes sputter deposition, ion plating, plasma-assisted chemical vapor deposition (PA-CVD), primary-ion deposition (PID), and molecular-beam epitaxy (MBE) using accelerated beam sources. Ion/surface interaction effects such as ion-induced chemistry, trapping, recoil implantation, preferential sputtering, collisional mixing, enhanced diffusion, and alteration in segregation behavior are used to interpret and model experimental results concerning the effects of low-energy particle bombardment on nucleation and growth kinetics, elemental incorporation probabilities, compositional depth distributions, and the growth of metastable phases.

AIP Advances ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 085023 ◽  
Author(s):  
Ravi Kumar ◽  
Priyanka Pandit ◽  
Prabir Pal ◽  
S. R. Dhakate ◽  
R. P. Pant ◽  
...  

2011 ◽  
Vol 1354 ◽  
Author(s):  
Jean Paul Allain ◽  
Osman El-Atwani ◽  
Alex Cimaroli ◽  
Daniel L. Rokusek ◽  
Sami Ortoleva ◽  
...  

ABSTRACTIon-beam sputtering (IBS) has been studied as a means for scalable, mask-less nanopatterning of surfaces. Patterning at the nanoscale has been achieved for numerous types of materials including: semiconductors, metals and insulators. Although much work has been focused on tailoring nanopatterning by systematic ion-beam parameter manipulation, limited work has addressed elucidating on the underlying mechanisms for self-organization of multi-component surfaces. In particular there has been little attention to correlate the surface chemistry variation during ion irradiation with the evolution of surface morphology and nanoscale self-organization. Moreover the role of surface impurities on patterning is not well known and characterization during the time-scale of modification remains challenging. This work summarizes an in-situ approach to characterize the evolution of surface chemistry during irradiation and its correlation to surface nanopatterning for a variety of multi-components surfaces. The work highlights the importance and role of surface impurities in nanopatterning of a surface during low-energy ion irradiation. In particular, it shows the importance of irradiation-driven mechanisms in GaSb(100) nanopatterning by low-energy ions and how the study of these systems can be impacted by oxide formation.


Author(s):  
J.E. Greene ◽  
S.A. Barnett ◽  
J.-E. Sundgren ◽  
A. Rockett

1986 ◽  
Vol 74 ◽  
Author(s):  
J. E. Greene ◽  
A. Rockett ◽  
J.-E. Sundgren

AbstractLow-energy (often < 100 eV) ion bombardment during thin film deposition is commonly used in such diverse application areas as microelectronics, optical coatings. magnetic recording layers. and hard wear resistant coatings to modify the microstructure and microchemistry of films deposited by a variety of techniques (e.g. sputtering, primary ion deposition, plasma-assisted CVD, and accelerated-beam MBE). Ion irradiation has been shown to affect every phase of deposition including nucleation and growth kinetics, crystal structure and phase stability, the average grain size and degree of preferred orientation of polycrystalline films, the epitaxial temperature of single-crystal films, defect concentrations, elemental incorporation probabilities, surface segregation, and, hence, film properties. As discussed in this brief review, a detailed understanding of many of these processes is beginning to emerge. Effects such as trapping, preferential sputtering, enhanced diffusion, and collisional mixing have been used to interpret and, in some cases, model experimental results. Nevertheless, there are still large gaps in our knowledge of the role of ion bombardment on fundamental processes such as nucleation kinetics.


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