Chemistry and Solid State Physics of Microcrystalline Silicon

1989 ◽  
Vol 164 ◽  
Author(s):  
Stan Vepřek
Keyword(s):  
State Physics ◽  
Nanocrystalline Silicon ◽  
Deposition Process ◽  
X Ray Diffraction ◽  
Microcrystalline Silicon ◽  
Large Area ◽  
Solid State Physics ◽  
X Ray ◽  
Partial Chemical ◽  
Microcrystalline Material

AbstractVarious methods for the preparation of microcrystalline (nanocrystalline) silicon are summarized and compared with respect to the possibility of the control of the materials quality and scaling of the deposition process to large area applications. It is shown that the deposition of a pure microcrystalline material is achieved under conditions close to partial chemical equilibrium. The mechanism of the crystallization during the growth will be briefly discussed.The second part of the paper deals with the physical properties of pure microcrystalline silicon which is free of any amorphous phase detectable by X-ray diffraction, i.e. less than about 1 vol%. Several aspects of electric conductivity, optical absorption and Raman scattering which have been frequently misinterpreted in the literature will be reviewed.

scholarly journals Femtosecond X-ray diffraction applications to biology and solid-state physics

2002 ◽  
Vol 58 (s1) ◽  
pp. c225-c225
Author(s):  
D. Boschetto ◽  
C. Rischel ◽  
S. Fourmaux ◽  
I. Uschmann ◽  
O. Albert ◽  
...  
Keyword(s):  
State Physics ◽  
Solid State ◽  
X Ray Diffraction ◽  
Solid State Physics ◽  
X Ray

Evaluation of an alternative technique for the fabrication of direct detector X-ray imagers: spray pyrolysis of lead iodide and mercury iodide

2004 ◽  
Vol 808 ◽  
Author(s):  
J. F. Condeles ◽  
J. C. Ugucioni ◽  
M. Mulato
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Deposition Process ◽  
Radiation Detectors ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Large Area ◽  
Lead Iodide ◽  
X Ray ◽  
Mercury Iodide

ABSTRACTThis work discusses the new use of an old deposition technique: spray pyrolysis. The objective is the deposition of thin films of lead iodide and mercury iodide and their future use as photoconductors in medical X-ray digital imagers. We discuss the main advantages and limitations of the deposition process comparing both materials. The final thin films are structurally investigated using X-ray diffraction and microscopy. The deposition technique seems to be very promising for the future development of large area radiation detectors.

Phase Characterization and Grain Size Effects of Nanophase Y2O3, ZrO2 and Y2O3-ZrO2 Composites Produced by the Gas-Phase Condensation Technique

1992 ◽  
Vol 286 ◽  
Author(s):  
C. M. Foster ◽  
G. R. Bai ◽  
J. C. Parker ◽  
M. N. Ali
Keyword(s):  
Grain Size ◽  
Raman Scattering ◽  
Gas Phase ◽  
Size Effects ◽  
Structural Evolution ◽  
Deposition Process ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nanophase Materials ◽  
Phase Characterization

ABSTRACTNanophase (n-) ZrO2 was produced in its pure and partially stabilized form by the gas-phase condensation method. The material was examined by x-ray diffraction and Raman scattering to obtain information on the structural evolution of the material during sintering. Two types of Y2O3 doped ZrO2 nanophase materials were made one by co-deposition of n-Y2O3 and n-ZrO2 in a consecutive manner and the second by mechanically mixing n-Y2O3 and n-ZrO2. We have determined that the co-deposition process is the most effect means of doping the n-ZrO2.

Stress in Hydrogenated Microcrystalline Silicon Thin Films

1999 ◽  
Vol 557 ◽  
Author(s):  
D. Peiró ◽  
C. Voz ◽  
J. Bertomeu ◽  
J. Andreu ◽  
E. Martínez ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Vapor Deposition ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Hot Wire ◽  
X Ray Diffraction ◽  
Microcrystalline Silicon ◽  
X Ray ◽  
Silicon Thin Films ◽  
Abrupt Changes

AbstractHydrogenated microcrystalline silicon films have been obtained by hot-wire chemical vapor deposition (HWCVD) in a silane and hydrogen mixture at low pressure (<5 × 10-2 mbar). The structure of the samples and the residual stress were characterised by X- ray diffraction (XRD). Raman spectroscopy was used to estimate the volume fraction of the crystalline phase, which is in the range of 86 % to 98%. The stress values range between 150 and -140 MPa. The mechanical properties were studied by nanoindentation. Unlike monocrystalline wafers, there is no evidence of abrupt changes in the force-penetration plot, which have been attributed to a pressure-induced phase transition. The hardness was 12.5 GPa for the best samples, which is close to that obtained for silicon wafers.

Large Area Supersonic Jet Epitaxy of AlN, GaN, and SiC on Silicon

1996 ◽  
Vol 449 ◽  
Author(s):  
L.J. Lauhon ◽  
S. A. Ustin ◽  
W. Ho
Keyword(s):  
Supersonic Jet ◽  
X Ray Diffraction ◽  
Large Area ◽  
Free Jets ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Supersonic Jet Epitaxy ◽  
Carrier Gases

ABSTRACTAlN, GaN, and SiC thin films were grown on 100 mm diameter Si(111) and Si(100) substrates using Supersonic Jet Epitaxy (SJE). Precursor gases were seeded in lighter mass carrier gases and free jets were formed using novel slit-jet apertures. The jet design, combined with substrate rotation, allowed for a uniform flux distribution over a large area of a 100 mm wafer at growth pressures of 1–20 mTorr. Triethylaluminum, triethylgailium, and ammonia were used for nitride growth, while disilane, acetylene, and methylsilane were used for SiC growth. The films were characterized by in situ optical reflectivity, x-ray diffraction (XRD), atomic force microscopy (AFM), and spectroscopic ellipsometry (SE).

Growth of epitaxial ZnO films on Si(111)

2002 ◽  
Vol 722 ◽  
Author(s):  
Chunming Jin ◽  
Ashutosh Tiwari ◽  
A. Kvit ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transparent Conducting Oxide ◽  
Deposition Process ◽  
Growth Direction ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Transmission Electron ◽  
Aln Buffer

AbstractEpitaxial ZnO films have been grown on Si(111) substrates by employing a AlN buffer layer during a pulsed laser-deposition process. The epitaxial structure of AlN on Si(111) substrate provides a template for ZnO growth. The resultant films are evaluated by transmission electron microscopy, x-ray diffraction, and electrical measurements. The results of x-ray diffraction and electron microscopy on these films clearly show the epitaxial growth of ZnO films with an orientational relationship of ZnO[0001]||Aln[0001]||Si[111] along the growth direction and ZnO[2 11 0]||AlN[2 11 0]||Si[0 11] along the in-plane direction. High electrical conductivity (103 S/m at 300 K) and a linear I-V characteristics make these epitaxial films ideal for microelectronic, optoelectronic, and transparent conducting oxide applications.

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