Large Area Supersonic Jet Epitaxy of AlN, GaN, and SiC on Silicon

1996 ◽  
Vol 449 ◽  
Author(s):  
L.J. Lauhon ◽  
S. A. Ustin ◽  
W. Ho
Keyword(s):  
Supersonic Jet ◽  
X Ray Diffraction ◽  
Large Area ◽  
Free Jets ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Supersonic Jet Epitaxy ◽  
Carrier Gases

ABSTRACTAlN, GaN, and SiC thin films were grown on 100 mm diameter Si(111) and Si(100) substrates using Supersonic Jet Epitaxy (SJE). Precursor gases were seeded in lighter mass carrier gases and free jets were formed using novel slit-jet apertures. The jet design, combined with substrate rotation, allowed for a uniform flux distribution over a large area of a 100 mm wafer at growth pressures of 1–20 mTorr. Triethylaluminum, triethylgailium, and ammonia were used for nitride growth, while disilane, acetylene, and methylsilane were used for SiC growth. The films were characterized by in situ optical reflectivity, x-ray diffraction (XRD), atomic force microscopy (AFM), and spectroscopic ellipsometry (SE).

(G03 Best Paper Award Winner) Analysis of Sn Behavior During Ni/GeSn Solid-State Reaction by Correlated X-ray Diffraction, Atomic Force Microscopy, and Ex-situ/In-situ Transmission Electron Microscopy

2020 ◽  
Vol MA2020-02 (24) ◽  
pp. 1750-1750
Author(s):  
Andrea Quintero Colmenares ◽  
Patrice Gergaud ◽  
Jean-Michel Hartmann ◽  
Vincent Delaye ◽  
Nicolas Bernier ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ex Situ ◽  
Paper Award ◽  
X Ray Diffraction ◽  
Award Winner ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

Surface Structural Characterization and Mechanical Testing by Nanoindentation Measurements of Hybrid Polymer/clay Nanostructured Multilayer Films

2002 ◽  
Vol 17 (7) ◽  
pp. 1622-1633 ◽  
Author(s):  
Xiaowu Fan ◽  
Mi-Kyoung Park ◽  
Chuanjun Xia ◽  
Rigoberto Advincula
Keyword(s):  
Thin Films ◽  
Quartz Crystal ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Diallyldimethylammonium Chloride

Nanostructured montmorillonite/poly(diallyldimethylammonium chloride) multilayer thin films were fabricated up to 100 layers thick by stepwise alternating polyelectrolyte and clay deposition from solution. The structure and morphology of the films were characterized by x-ray diffraction, ellipsometry, atomic force microscopy, and quartz crystal microbalance ex situ and in situ measurements. The mechanical properties were tested by nanoindentation. The hardness of the multilayer thin film was 0.46 GPa. The thin film's modulus was correlated to its ordering and anisotropic structure. Both hardness and modulus of this composite film were higher than those of several other types of polymer thin films.

Drastic Change in the Gan Film Quality by In-Situ Controlling Surface Reconstructions In Gsmbe

1997 ◽  
Vol 482 ◽  
Author(s):  
X. Q. Shen ◽  
S. Tanaka ◽  
S. Iwai ◽  
Y. Aoyagi
Keyword(s):  
Growth Conditions ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Gas Source ◽  
Atomic Force ◽  
Surface Reconstructions ◽  
Gan Film

AbstractGaN growth was performed on 6H-SiC (0001) substrates by gas-source molecular beam epitaxy (GSMBE), using ammonia (NH3) as a nitrogen source. Two kinds of reflection high-energy electron diffraction (RHEED) patterns, named (1×1) and (2×2), were observed during the GaN growth depending on the growth conditions. By careful RHEED study, it was verified that the (1×1) pattern was corresponded to a H2-related nitrogen-rich surface, while (2×2) pattern was resulted from a Ga-rich surface. By x-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) characterizations, it was found that the GaN quality changed drastically grown under different RHEED patterns. GaN film grown under the (1×1) RHEED pattern showed much better qualities than that grown under the (2×2) one.

scholarly journals Electroplating of Semiconductor Materials for Applications in Large Area Electronics: A Review

Coatings ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 262 ◽  
Author(s):  
Ayotunde Adigun Ojo ◽  
Imyhamy Mudiy Dharmadasa
Keyword(s):  
Low Cost ◽  
Photoelectrochemical Cell ◽  
X Ray Diffraction ◽  
Large Area ◽  
X Ray ◽  
Force Microscopy ◽  
Treatment Processes ◽  
Atomic Force ◽  
Optical And Electronic Properties ◽  
Device Applications

The attributes of electroplating as a low-cost, simple, scalable, and manufacturable semiconductor deposition technique for the fabrication of large-area and nanotechnology-based device applications are discussed. These strengths of electrodeposition are buttressed experimentally using techniques such as X-ray diffraction, ultraviolet-visible spectroscopy, scanning electron microscopy, atomic force microscopy, energy-dispersive X-ray spectroscopy, and photoelectrochemical cell studies. Based on the results of structural, morphological, compositional, optical, and electronic properties evaluated, it is evident that electroplating possesses the capabilities of producing high-quality semiconductors usable for producing excellent devices. In this paper we will describe the progress of electroplating techniques mainly for the deposition of semiconductor thin film materials and their treatment processes, and fabrication of solar cells.

Probing the elastic properties of individual nanostructures by combining in situ atomic force microscopy and micro-x-ray diffraction

2009 ◽  
Vol 94 (2) ◽  
pp. 023109 ◽  
Author(s):  
T. Scheler ◽  
M. Rodrigues ◽  
T. W. Cornelius ◽  
C. Mocuta ◽  
A. Malachias ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Elastic Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals Electroplating of Electronic Materials for Applications in Large Area Electronics: A Review

2018 ◽  
Author(s):  
A.A. Ojo ◽  
I.M. Dharmadasa
Keyword(s):  
Electronic Materials ◽  
Low Cost ◽  
Photoelectrochemical Cell ◽  
X Ray Diffraction ◽  
Large Area ◽  
X Ray ◽  
Force Microscopy ◽  
Treatment Processes ◽  
Atomic Force ◽  
Device Applications

The attributes of electroplating as a low-cost, simple, scalable and manufacturable semiconductor deposition technique for the fabrication of large-area and nanotechnology-based device applications are discussed. These strengths of electrodeposition are buttressed experimentally using techniques such as X-ray diffraction, Ultraviolet-visible spectroscopy, Scanning electron microscopy, Atomic force microscopy, Energy-dispersive X-ray spectroscopy and photoelectrochemical cell studies. Based on the structural, morphological, compositional optical, and electronic properties evaluated results, it is evident that electroplating possesses the capabilities of producing high-quality semiconductors usable in producing excellent devices. In this paper, we will describe the progress of electroplating technique mainly for the deposition of semiconductor thin film materials, their treatment processes and fabrication of solar cells.

In situ observation of the elastic deformation of a single epitaxial SiGe crystal by combining atomic force microscopy and micro x-ray diffraction

2009 ◽  
Vol 106 (10) ◽  
pp. 103525 ◽  
Author(s):  
M. S. Rodrigues ◽  
T. W. Cornelius ◽  
T. Scheler ◽  
C. Mocuta ◽  
A. Malachias ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Elastic Deformation ◽  
In Situ Observation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force
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