Defects in MBE-grown Silicon Epilayers Studied with Variable-Energy Positrons
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AbstractFew non-destructive techniques are available which provide information regarding defect type, concentration and depth distribution in semiconductors. The variable-energy positron beam technique has recently demonstrated a sensitivity to near surface defects and impurities at low defect concentrations. In the present study, intrinsic silicon (100) epilayers of ~3000 Å thickness grown by MBE at different temperatures were examined by this method for evidence of changing defect concentration and type.
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1990 ◽
Vol 173
(3)
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pp. 307-312
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2021 ◽
Vol 1203
(3)
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pp. 032058
1992 ◽
Vol 105-110
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pp. 1459-1462
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1986 ◽
Vol 17
(1)
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pp. 73-80
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