Sn-H Complex in Hydrogen Pass Ivated GaAs

1989 ◽  
Vol 163 ◽  
Author(s):  
D. M. Kozuch ◽  
Michael Stavola ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
J. Lopata
Keyword(s):  
Thermal Stability ◽  
Hydrogen Plasma ◽  
Absorption Bands ◽  
Vibrational Absorption ◽  
Annealing Temperatures ◽  
Thermal Stability Of

AbstractIt is confirmed that Sn donors in GaAs are passivated by exposure to a hydrogen plasma. The Sn-H complexes give rise to vibrational absorption bands at 1327.8 cm-1 and 967.7 cm-1 that are assigned to H-stretching and H-wagging modes respectively. A study of the thermal stability of the Sn-H complexes shows that they dissociate for annealing temperatures above ~150°C. The properties of the Sn-H complexes are compared to those of other donor-H complexes. Our results suggest a configuration for the complex with H at the antibonding site adjacent to the Sn.

Effect of Si Content on Thermal Stability of CrAl(Si)N Coatings

2015 ◽  
Vol 799-800 ◽  
pp. 448-451 ◽  
Author(s):  
Zhi Tong Chen ◽  
Guang Jian Peng ◽  
Yuan Xia ◽  
Guang Li
Keyword(s):  
Thermal Stability ◽  
Annealing Temperature ◽  
Mechanical Behaviors ◽  
Annealing Temperatures ◽  
Grain Sizes ◽  
Si Content ◽  
Surface Morphologies ◽  
Thermal Stability Of

The effect of annealing temperatures on surface morphologies, microstructure, and mechanical behaviors of CrAlSiN coatings with different Si content was investigated. EDX, XRD and SEM were employed to reveal the compositions and microstructure of CrAlSiN coatings. For Si content ≤8.6%, grain sizes reduced with temperature increasing to 400°C and then increased with further increase in temperature. For Si content ≥10.7%, grain sizes gradually reduced with annealing temperature increasing. When the annealing temperature arrived at 400°C, the hardness of CrAlSiN coatings with different Si content was much higher than as deposited. While the annealing further increased to 800°C, the hardness of CrAlSiN coatings with Si content ≤8.6% reduced, but the hardness of CrAlSiN coatings with Si content ≥10.7% continued to increase.

Thermal Stability of Ohmic Contacts to n-InxGa1−xN

1995 ◽  
Vol 395 ◽  
Author(s):  
A. Duibha ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
J. W. Lee ◽  
P. H. Holloway ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electron Spectroscopy ◽  
Ohmic Contacts ◽  
Electrical Characteristics ◽  
Microstructural Properties ◽  
Excellent Thermal Stability ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
Thermal Stability Of

ABSTRACTThe microstructural properties and interdiffusion reactions of Au/Ge/Ni, Ti/Pt/Au, WSix and AuBe contacts on GaN and In0.5Ga0.5N have been examined using Scanning Electron Microscopy and Auger Electron Spectroscopy. The WSix contacts possess excellent thermal stability and retained good structural properties at annealing temperatures as high as 800°C on GaN. The electrical characteristics of WSix contacts on In0.5Ga0.5N had a specific contact resistivity of 1.48×10−5Ωcm2 and an excellent surface morphology following annealing at 700°C. The increase in contact resistance observed at higher temperatures was attributed to intermixing of metal and semiconductor. In contrast the Ti/Pt/Au and Au/Ge/Ni contacts were stable only to ≤ 500°C. AuBe contacts had the poorest thermal stability, with substantial reaction with GaN occurring even at 400°C. The WSix contact appears to be an excellent choice for high temperature GaN electronics applications.

scholarly journals Phenoxo complexes of copper(II)

1969 ◽  
Vol 47 (4) ◽  
pp. 637-645 ◽  
Author(s):  
J. F. Harrod
Keyword(s):  
Thermal Stability ◽  
Visible Region ◽  
Decomposition Reaction ◽  
Charge Transfer Process ◽  
Absorption Bands ◽  
Ligand Charge Transfer ◽  
Oxidizing Power ◽  
Amine Ligands ◽  
Intense Absorption ◽  
Thermal Stability Of

A series of phenoxo complexes of copper(II) containing a variety of halophenoxo ligands and a variety of amine ligands has been prepared. The thermal stability of the complexes with regard to the decomposition reaction:[Formula: see text]was found to be lower with those ligands, L, which increase the oxidizing power of the copper(II) and vice versa.The intense absorption bands in the visible region exhibited by these complexes have been assigned to a metal-to-ligand charge transfer process.

Thermal Stability of Cobalt Disilicide for Self-Aligned Silicide Applications

1992 ◽  
Vol 260 ◽  
Author(s):  
W. Chen ◽  
J. Lin ◽  
S. Banerjee ◽  
J. Lee
Keyword(s):  
Thermal Stability ◽  
Single Crystal ◽  
Thermal Processing ◽  
High Dose ◽  
Degradation Behavior ◽  
Si Substrate ◽  
Cobalt Disilicide ◽  
Annealing Temperatures ◽  
Amorphous Si ◽  
Thermal Stability Of

ABSTRACTThe thermal stability of COSi2 for thermal budgets suitable for a self-aligned P+ gate MOSFET process using rapid thermal processing was studied. The substrate underlying the suicide has a major impact on suicide degradation. Suicides formed on as-deposited amorphous silicon films and on single crystal Si were found to be stable at least up to 1000°C, whereas suicides formed on as-deposited polysilicon (i.e. conventional polycide) began to degrade at annealing temperatures greater than 800°C. BF2-implant dosages of 1×1015 cm-2 to 2×1016 cm-2 at 20keV in the suicide were found to affect the conventional polycide significantly. With higher implant dosages, the degradation of the conventional polycide is retarded for a 900°C anneal. However, for thermally stable suicides i.e., suicides formed on as-deposited amorphous Si and on single crystal Si, a high dose 2×1016 cm-2 implant increases the sheet resistance slightly from 1.4 Ω/square to 1.6 Ω/square for suicides on as-deposited amorphous Si substrate, and from 1.3 Ω/square to 1.6 Ω/square for suicides on single crystal substrates. A model which involves spheroidization of the suicide, silicon incursion, and indiffusion of Co into polysilicon is proposed to explain the degradation behavior.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Practical criteria for the thermal stability of a unidimensional superconductor

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Time and thermal stability of magnetic properties of amorphous Fe80TM3B17 alloys

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas
Keyword(s):  
Thermal Stability ◽  
Magnetic Properties ◽  
Thermal Stability Of
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