Thermal Stability of Cobalt Disilicide for Self-Aligned Silicide Applications

1992 ◽  
Vol 260 ◽  
Author(s):  
W. Chen ◽  
J. Lin ◽  
S. Banerjee ◽  
J. Lee
Keyword(s):  
Thermal Stability ◽  
Single Crystal ◽  
Thermal Processing ◽  
High Dose ◽  
Degradation Behavior ◽  
Si Substrate ◽  
Cobalt Disilicide ◽  
Annealing Temperatures ◽  
Amorphous Si ◽  
Thermal Stability Of

ABSTRACTThe thermal stability of COSi2 for thermal budgets suitable for a self-aligned P+ gate MOSFET process using rapid thermal processing was studied. The substrate underlying the suicide has a major impact on suicide degradation. Suicides formed on as-deposited amorphous silicon films and on single crystal Si were found to be stable at least up to 1000°C, whereas suicides formed on as-deposited polysilicon (i.e. conventional polycide) began to degrade at annealing temperatures greater than 800°C. BF2-implant dosages of 1×1015 cm-2 to 2×1016 cm-2 at 20keV in the suicide were found to affect the conventional polycide significantly. With higher implant dosages, the degradation of the conventional polycide is retarded for a 900°C anneal. However, for thermally stable suicides i.e., suicides formed on as-deposited amorphous Si and on single crystal Si, a high dose 2×1016 cm-2 implant increases the sheet resistance slightly from 1.4 Ω/square to 1.6 Ω/square for suicides on as-deposited amorphous Si substrate, and from 1.3 Ω/square to 1.6 Ω/square for suicides on single crystal substrates. A model which involves spheroidization of the suicide, silicon incursion, and indiffusion of Co into polysilicon is proposed to explain the degradation behavior.

Meyer-Neldel Rule on thermal stability parameters (trap depth and frequency factor) of luminescence signals in quartz

2021 ◽  
Author(s):  
Zuzanna Kabacińska ◽  
Alida Timar-Gabor ◽  
Benny Guralnik
Keyword(s):  
Activation Energy ◽  
Thermal Stability ◽  
Hydrogen Diffusion ◽  
Dose Range ◽  
Accurate Determination ◽  
Frequency Factor ◽  
Proton Conduction ◽  
High Dose ◽  
Compensation Law ◽  
Thermal Stability Of

<p>Thermally activated processes can be described mathematically by the Arrhenius equation. The Meyer-Neldel Rule (MNR), or compensation law, linearly relates the pre-exponent term to the logarithm of the excitation enthalpy for processes that are thermally driven in an Arrhenian manner. This empirical rule was observed in many areas of materials science, in physics, chemistry, and biology. In geosciences it was found to uphold in hydrogen diffusion (Jones 2014a) and proton conduction (Jones 2014b) in minerals.</p><p>Trapped charge dating methods that use electron spin resonance (ESR) or optically or thermally stimulated luminescence (OSL and TL) are based on the dose-dependent accumulation of defects in minerals such as quartz and feldspar. The thermal stability of these defects in the age range investigated is a major prerequisite for accurate dating, while the accurate determination of the values of the trap depths and frequency factors play a major role in thermochronometry applications. </p><p>The correlation of kinetic parameters for diffusion has been very recently established for irradiated oxides (Kotomin et al. 2018). A correlation between the activation energy and the frequency factor that satisfied the Meyer–Neldel rule was reported when the thermal stability of [AlO<sub>4</sub>/h<sup>+</sup>]<sup>0</sup> and [TiO<sub>4</sub>/M<sup>+</sup>]<sup>0</sup> ESR signals in quartz was studied as function of dose (Benzid and Timar-Gabor 2020). Here we compiled the optically stimulated luminescence (OSL) data published so far in this regard, and investigated experimentally the thermal stability of OSL signals for doses ranging from 10 to 10000 Gy in sedimentary quartz samples. We report a linear relationship between the natural logarithm of the preexponent term (the frequency factor) and the activation energy E, corresponding to a Meyer-Neldel energy of 45 meV, and a deviation from first order kinetics in the high dose range accompanied by an apparent decrease in thermal stability. The implications of these observations and the atomic and physical mechanisms are currently studied.</p><p> </p><p><strong>References</strong></p><p>Benzid, K., Timar Gabor, A. 2020. The compensation effect (Meyer–Neldel rule) on [AlO<sub>4</sub>/h<sup>+</sup>]<sup>0</sup> and [TiO<sub>4</sub>/M<sup>+</sup>]<sup>0</sup> paramagnetic centers in irradiated sedimentary quartz. <em>AIP Advance</em>s 10, 075114.</p><p>Kotomin, E., Kuzovkov, V., Popov, A. I., Maier, J., and Vila, R. 2018. Anomalous kinetics of diffusion-controlled defect annealing in irradiated ionic solids. <em>J. Phys. Chem. A</em> 122(1), 28–32</p><p>Jones, A. G. (2014a), Compensation of the Meyer-Neldel Compensation Law for H diffusion in minerals, <em>Geochem. Geophys. Geosyst.</em>, 15, 2616–2631</p><p>Jones, A. G. (2014b), Reconciling different equations for proton conduction using the Meyer-Neldel compensation rule, <em>Geochem. Geophys. Geosyst</em>., 15, 337–349</p>

Thermal stability of indium nitride single crystal films

1993 ◽  
Vol 73 (11) ◽  
pp. 7969-7971 ◽  
Author(s):  
Qixin Guo ◽  
Osamu Kato ◽  
Akira Yoshida
Keyword(s):  
Thermal Stability ◽  
Single Crystal ◽  
Indium Nitride ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Thermal Stability Of

Enhancing the thermal stability of switched domains in lithium niobate single-crystal thin films

2020 ◽  
Vol 46 (7) ◽  
pp. 9192-9197 ◽  
Author(s):  
Liaoyuan Zhang ◽  
Wenping Geng ◽  
Xi Chen ◽  
Yimeng Li ◽  
Xiaojun Qiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Lithium Niobate ◽  
Single Crystal ◽  
Lithium Niobate Single Crystal ◽  
Thermal Stability Of

Sn-H Complex in Hydrogen Pass Ivated GaAs

1989 ◽  
Vol 163 ◽  
Author(s):  
D. M. Kozuch ◽  
Michael Stavola ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
J. Lopata
Keyword(s):  
Thermal Stability ◽  
Hydrogen Plasma ◽  
Absorption Bands ◽  
Vibrational Absorption ◽  
Annealing Temperatures ◽  
Thermal Stability Of

AbstractIt is confirmed that Sn donors in GaAs are passivated by exposure to a hydrogen plasma. The Sn-H complexes give rise to vibrational absorption bands at 1327.8 cm-1 and 967.7 cm-1 that are assigned to H-stretching and H-wagging modes respectively. A study of the thermal stability of the Sn-H complexes shows that they dissociate for annealing temperatures above ~150°C. The properties of the Sn-H complexes are compared to those of other donor-H complexes. Our results suggest a configuration for the complex with H at the antibonding site adjacent to the Sn.

Thermal Stability of CoSi2 on Single Crystal and Polycrystalline Silicon

1990 ◽  
Vol 182 ◽  
Author(s):  
J. R. Phillips ◽  
P. Revesz ◽  
J. O. Olowolafe ◽  
J. W. Mayer
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
Single Crystal ◽  
Polycrystalline Silicon ◽  
Sheet Resistivity ◽  
X Ray ◽  
Resistivity Measurements ◽  
Silicide Layer ◽  
Thermal Stability Of ◽  
Scanning Electron

AbstractThe thermal stability of Co silicide on single crystal and polycrystalline Si has been investigated. Co films were evaporated onto (100) Si and undoped polycrystalline Si and annealed in vacuum. Resulting silicide films were examined using Rutherford backscattering spectroscopy, scanning electron microscopy, electron—induced x—ray spectroscopy, and sheet resistivity measurements. We find that CoSi2 on single crystal (100) Si remains stable through 1000ºC. In contact with undoped polycrystalline Si, intermixing begins at temperatures as low as 650ºC for 30min annealing. The Co silicide and Si layers are intermixed after 750ºC 30min annealing, giving islands of Si surrounded by silicide material, with both components extending from the surface down to the underlying oxide layer. The behavior of CoSi2 contrasts with results reported for TiSi2 which agglomerates on single crystal Si around 900ºC but is stable on polycrystalline silicon as high as 800ºC. Resistivity measurements show that the Co silicide remained interconnected despite massive incursion by Si into the silicide layer.

Implant isolation of ZnO epitaxial layers

2002 ◽  
Vol 744 ◽  
Author(s):  
S. O. Kucheyev ◽  
C. Jagadish ◽  
J. S. Williams ◽  
P. N. K. Deenapanray ◽  
Mitsuaki Yano ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Single Crystal ◽  
Sheet Resistance ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Irradiation Temperature ◽  
Minor Effect ◽  
Electrical Isolation ◽  
Atomic Displacements ◽  
Thermal Stability Of

ABSTRACTThe formation of highly resistive films of single-crystal ZnO as a result of irradiation with MeV Li, O, and Si ions is demonstrated. Results show that the ion doses necessary for electrical isolation close-to-inversely depend on the number of ion-beam-generated atomic displacements. Results show that an increase in the dose of 2 MeV O ions (up to ∼ 2 orders of magnitude above the threshold isolation dose) and irradiation temperature (up to 350 °C) has a relatively minor effect on the thermal stability of electrical isolation, which is limited to temperatures of ∼ 300 — 400 °C. For the case of multiple-energy implantation with keV Cr, Fe, or Ni ions, the evolution of sheet resistance with annealing temperature is consistent with defect-induced isolation, with a relatively minor effect of Cr, Fe, or Ni impurities on the thermal stability of isolation. Based on these results, the mechanism for electrical isolation in ZnO by ion bombardment is discussed.

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