scholarly journals Phenoxo complexes of copper(II)

1969 ◽  
Vol 47 (4) ◽  
pp. 637-645 ◽  
Author(s):  
J. F. Harrod

A series of phenoxo complexes of copper(II) containing a variety of halophenoxo ligands and a variety of amine ligands has been prepared. The thermal stability of the complexes with regard to the decomposition reaction:[Formula: see text]was found to be lower with those ligands, L, which increase the oxidizing power of the copper(II) and vice versa.The intense absorption bands in the visible region exhibited by these complexes have been assigned to a metal-to-ligand charge transfer process.

1989 ◽  
Vol 163 ◽  
Author(s):  
D. M. Kozuch ◽  
Michael Stavola ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
J. Lopata

AbstractIt is confirmed that Sn donors in GaAs are passivated by exposure to a hydrogen plasma. The Sn-H complexes give rise to vibrational absorption bands at 1327.8 cm-1 and 967.7 cm-1 that are assigned to H-stretching and H-wagging modes respectively. A study of the thermal stability of the Sn-H complexes shows that they dissociate for annealing temperatures above ~150°C. The properties of the Sn-H complexes are compared to those of other donor-H complexes. Our results suggest a configuration for the complex with H at the antibonding site adjacent to the Sn.


2005 ◽  
Vol 83 (8) ◽  
pp. 1114-1119 ◽  
Author(s):  
Elena Ioachim ◽  
Garry S Hanan

A new family of tetracarbonyl molybdenum(0) and tungsten(0) complexes based on new 6,6′-disubstituted-4,4′-bipyrimidine ligands was synthesized and characterized. The visible region of the absorption spectrum of each complex is dominated by a metal-to-ligand charge transfer band significantly lower in energy than the corresponding transition in 2,2′-bipyridine tetracarbonyl metal complexes. The 6,6′-substituents create a larger π-electronic system in the substituted bipyrimidines and are consequently better π acceptors than even the parent 4,4′-bipyrimidine. The absorption bands are shifted bathochromically with a decrease in solvent polarity.Key words: molybdenum and tungsten, nitrogen ligands, tetracarbonyl metal complexes, absorption spectroscopy, electrochemistry.


2013 ◽  
Vol 815 ◽  
pp. 126-129
Author(s):  
Wei He ◽  
Yong Zhi Zhang ◽  
Yun Hong Zhao ◽  
Ling Min Zeng

The rare earth-cobalt compounds with CaCu5-type structure were discovered to have outstanding permanent magnetic properties. The thermal stability of Y1-xErxCo5(x = 0, 0.12, 0.24) was investigated by X-ray powder diffraction, differential thermal analysis and scanning electron microscopy with energy dispersive analysis. The influence of Er for Y on the decomposition of Y1-xErxCo5was discussed. The substitution of Er for Y in the compound YCo5obviously enhanced the decomposition temperature and accelerated the decomposition reaction of the compounds Y1-xErxCo5into (Y1-xErx)2Co17and (Y1-xErx)2Co7.


2021 ◽  
Vol 22 (10) ◽  
pp. 465-471
Author(s):  
Zhannur Myltykbaeva ◽  
◽  
Alexander Anisimov ◽  
Anar Seisembekova ◽  
Madi Smaiyl ◽  
...  

For the extraction of vanadylporphyrin complexes from oils of the oil-and-gas bearing region «North Buzachi» at 20 °C, N-N-Dimethylformamide (DMF) was used as an extractant, which shows a good isolating ability of porphyrin complexes into fractions with increasing the polarity. In the visible region the electronic spectra of metalporphyrin concentrates isolated from oil differ slightly and have two intense absorption bands at 573 nm and 534 nm, corresponding to vanadylporphyrin complexes, and at 550 nm, related to nickel porphyrins. According to the calculation method of graphical extrapolation, using the Lambert-Ber formula, content of nickel porphyrins in the extract is 11 times less than vanadylporphyrins. In the FT-IR spectra of porphyrinates, strong deformation vibrations of C-H-pyrrole fragments were detected in the absorption area 809.27 and 3024.79 cm-1, which indicate the presence of vanadium (IV) porphyrinate in the isolated fraction.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas

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