Ge Related Deep Level Luminescence in InGaAs Lattice Matched to InP

1989 ◽  
Vol 163 ◽  
Author(s):  
S.S. Chandvankar ◽  
A.K. Srivastava ◽  
B.M. Arora ◽  
D.K. Sharma
Keyword(s):  
Low Temperature ◽  
Carrier Concentration ◽  
Lower Energy ◽  
Deep Level ◽  
Peak Position ◽  
Type Conductivity ◽  
Pl Spectra ◽  
P Type ◽  
Lattice Matched ◽  
Ge Doping

AbstractPhotoluminescence and Hall measurements are reported on Ge doped InGaAs layers lattice matched to InP. Ge doping of these samples results in highly compensated material, with the highest Ge content sample giving a p type conductivity with carrier concentration of 5 ×1017 cm-3. Low temperature PL spectra of these samples show a broad peak from 0.55 to 0.77 eV due to Ge. The peak of luminescence shifts to lower energy with increasing Ge content. The peak position shifts to higher energy with increasing excitation like in a D-A pair transition. The PL spectra have been explained on the basis of a model which assumes tail states near the band edges due to disorder produced by the presence of Ge in the lattice.

scholarly journals Electrical Properties of Cubic InN And GaN Epitaxial Layers as a Function of Temperature

2000 ◽  
Vol 5 (S1) ◽  
pp. 216-222
Author(s):  
J.R.L. Fernandez ◽  
V.A. Chitta ◽  
E. Abramof ◽  
A. Ferreira da Silva ◽  
J.R. Leite ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Doping Level ◽  
Type Conductivity ◽  
Si Doping ◽  
Donor And Acceptor ◽  
Cubic Gan ◽  
Si Doped ◽  
P Type

Carrier concentration and mobility were measured for intrinsic cubic InN and GaN, and for Si-doped cubic GaN as a function of temperature. Metallic n-type conductivity was found for the InN, while background p-type conductivity was observed for the intrinsic GaN layer. Doping the cubic GaN with Si two regimes were observed. For low Si-doping concentrations, the samples remain p-type. Increasing the Si-doping level, the background acceptors are compensated and the samples became highly degenerated n-type. From the carrier concentration dependence on temperature, the activation energy of the donor and acceptor levels was determined. Attempts were made to determine the scattering mechanisms responsible for the behavior of the mobility as a function of temperature.

Annealing effect on the P-type carrier concentration in low-temperature processed arsenic-doped HgCdTe

1993 ◽  
Vol 22 (8) ◽  
pp. 1039-1047 ◽  
Author(s):  
S. H. Shin ◽  
J. M. Arias ◽  
M. Zandian ◽  
J. G. Pasko ◽  
L. O. Bubulac ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carrier Concentration ◽  
Annealing Effect ◽  
P Type

Deep level acceptors of Zn-Mg divalent ions dopants in β-Ga2O3 for the difficulty to p-type conductivity

2019 ◽  
Vol 782 ◽  
pp. 299-303 ◽  
Author(s):  
Yuanli Su ◽  
Daoyou Guo ◽  
Junhao Ye ◽  
Hailin Zhao ◽  
Zhe Wang ◽  
...  
Keyword(s):  
Deep Level ◽  
Divalent Ions ◽  
Type Conductivity ◽  
P Type

Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons

2010 ◽  
Vol 645-648 ◽  
pp. 419-422
Author(s):  
Fei Yan ◽  
Robert P. Devaty ◽  
Wolfgang J. Choyke ◽  
Katsunori Danno ◽  
Giovanni Alfieri ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ground State ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Separate Paper ◽  
Defect Centers ◽  
Thermal Histories ◽  
Transient Spectroscopy ◽  
P Type ◽  
Low Temperature Photoluminescence

In this paper we describe an effort to find correlations between low temperature photoluminescence spectroscopy (LTPL) and deep level transient spectroscopy (DLTS) of electron irradiated samples annealed from 25 °C to 1700 °C in 100 °C steps. We report on thermal histories of defect centers created by 170 keV and 1 MeV electron irradiation, as observed by LTPL only. The DLTS results on "twin" samples are presented in a separate paper. Our results indicate that in n-type 4H SiC there is no correlation between the Z1/Z2 center in DLTS and the L1 peak of the DI center seen in LTPL. In p-type 4H SiC we do not find a correlation between a 350 meV DLTS peak above the valence band and the LTPL L1 peak of the DI center. Consequently, we cannot find evidence for a 350 meV ground state postulated in the “Pseudo–Donor” model [3].

Defects in Mg-Doped InP and GaInAs Grown by Omvpe

1986 ◽  
Vol 90 ◽  
Author(s):  
Fred R. Bacher ◽  
H. Cholan ◽  
Wallace B. Leigh
Keyword(s):  
Lattice Mismatch ◽  
Deep Level ◽  
Shallow Donor ◽  
Band Edge Emission ◽  
Pressure System ◽  
Group Iii ◽  
Heavily Doped ◽  
Transient Spectroscopy ◽  
P Type ◽  
Lattice Matched

ABSTRACTWe report on the defects present in doped InP and GaInAs grown by organometallic vapor phase epitaxy (OMVPE). The material was grown in an atmospheric pressure system using group III trimethyl sources, arsine and phosphine. Bis(cyclopentadienyl) magnesium (Cp2Mg) was present as a p-type source of magnesium. Defects in as-grown material were characterized using photoluminescence (PL), Hall-effect, and deep level transient spectroscopy (DLTS). Various levels of Mg doping were investigated, ranging from 5 × 1015 to 1 × 1019 cm−3. Radiative defects were observed at 77 K corresponding to PL emission from conduction band/shallow donor to acceptor levels including emission at 1.37 eV identified as the shallow hydrogenic acceptor, and emission lines at 1.3 eV and 1.0 eV in heavily doped material. Corresponding hole traps in InP:Mg were observed by DLTS having thermal activation energies of 0.20 and 0.40 eV, the 0.40 eV trap being the dominant defect in p-type InP. In GaInAs grown near lattice-matched to InP, radiative emission is also observed from deep centers 100 meV from band edge emission. This emission is observed to be related to lattice-mismatch of the ternary with the InP, and is found to be accentuated and broadened in GaInAs doped with Mg.

scholarly journals Study of the heavily p-type doping of cubic GaN with Mg

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
C. A. Hernández-Gutiérrez ◽  
Y. L. Casallas-Moreno ◽  
Victor-Tapio Rangel-Kuoppa ◽  
Dagoberto Cardona ◽  
Yaoqiao Hu ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Density Functional ◽  
Deep Level ◽  
Cubic Phase ◽  
Suitable Alternative ◽  
Free Hole ◽  
Hole Carrier Concentration ◽  
Cubic Gan ◽  
P Type ◽  
Mg Doped

Abstract We have studied the Mg doping of cubic GaN grown by plasma-assisted Molecular Beam Epitaxy (PA-MBE) over GaAs (001) substrates. In particular, we concentrated on conditions to obtain heavy p-type doping to achieve low resistance films which can be used in bipolar devices. We simulated the Mg-doped GaN transport properties by density functional theory (DFT) to compare with the experimental data. Mg-doped GaN cubic epitaxial layers grown under optimized conditions show a free hole carrier concentration with a maximum value of 6 × 1019 cm−3 and mobility of 3 cm2/Vs. Deep level transient spectroscopy shows the presence of a trap with an activation energy of 114 meV presumably associated with nitrogen vacancies, which could be the cause for the observed self-compensation behavior in heavily Mg-doped GaN involving Mg-VN complexes. Furthermore, valence band analysis by X-ray photoelectron spectroscopy and photoluminescence spectroscopy revealed an Mg ionization energy of about 100 meV, which agrees quite well with the value of 99.6 meV obtained by DFT. Our results show that the cubic phase is a suitable alternative to generate a high free hole carrier concentration for GaN.

P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates

2009 ◽  
Vol 615-617 ◽  
pp. 177-180
Author(s):  
Sergey P. Lebedev ◽  
Alexander A. Lebedev ◽  
Pavel L. Abramov ◽  
Elena V. Bogdanova ◽  
D.K. Nel'son ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Carrier Concentration ◽  
Crystal Perfection ◽  
Pl Spectra ◽  
P Type

Highly doped p-3C-SiC layers of good crystal perfection have been grown by sublimation epitaxy in vacuum. Analysis of the photoluminescence (PL) spectra and temperature dependence of the carrier concentration shows that at least two types of acceptor centers at ~EV + 0.25 eV and at EV + 0.06-0.07 eV exist in the samples studied. A conclusion is made that layers of this kind can be used as p-emitters in 3C-SiC devices.

Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity

2009 ◽  
Vol 615-617 ◽  
pp. 259-262
Author(s):  
Felix Oehlschläger ◽  
Sandrine Juillaguet ◽  
Hervé Peyre ◽  
Jean Camassel ◽  
Peter J. Wellmann
Keyword(s):  
Low Temperature ◽  
Charge Carrier ◽  
Carrier Concentration ◽  
Charge Carrier Concentration ◽  
Powerful Method ◽  
Carrier Distribution ◽  
Pl Intensity ◽  
P Type ◽  
Non Destructive

Photoluminescence(PL)-topography is a powerful method to determine the charge carrier concentration of SiC-wafers. The following work describes the development of a PL-topography method for the determination of charge carrier distribution in p-type SiC and shows the correlation of PL-Intensity and charge carrier concentration. With this setup it is possible to characterize wafers up to a size of 2” at room- and low temperature in a non-destructive way.

Electrical Properties of Cubic InN and GaN Epitaxial Layers as a Function of Temperature

1999 ◽  
Vol 595 ◽  
Author(s):  
J.R.L. Fernandez ◽  
V.A. Chitta ◽  
E. Abramof ◽  
A. Ferreira da Silva ◽  
J.R. Leite ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Doping Level ◽  
Type Conductivity ◽  
Si Doping ◽  
Donor And Acceptor ◽  
Cubic Gan ◽  
Si Doped ◽  
P Type

AbstractCarrier concentration and mobility were measured for intrinsic cubic InN and GaN, and for Si-doped cubic GaN as a function of temperature. Metallic n-type conductivity was found for the InN, while background p-type conductivity was observed for the intrinsic GaN layer. Doping the cubic GaN with Si two regimes were observed. For low Si-doping concentrations, the samples remain p-type. Increasing the Si-doping level, the background acceptors are compensated and the samples became highly degenerated n-type. From the carrier concentration dependence on temperature, the activation energy of the donor and acceptor levels was determined. Attempts were made to determine the scattering mechanisms responsible for the behavior of the mobility as a function of temperature.

DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 547-552 ◽  
Author(s):  
Yue Long Huang ◽  
Eddy Simoen ◽  
Cor Claeys ◽  
Reinhart Job ◽  
Yue Ma ◽  
...  
Keyword(s):  
Activation Energy ◽  
Low Temperature ◽  
Annealing Temperature ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Plasma Exposure ◽  
Czochralski Silicon ◽  
Free Carriers ◽  
Shallow Donors ◽  
P Type

P-n junctions are created in p-type Czochralski silicon after a low temperature (270°C) hydrogen plasma exposure. This is attributed to the formation of hydrogen-related shallow donors. A deep level (E1) with an activation energy of about EC-0.12 eV is observed by DLTS measurement and assigned to a metastable state of the hydrogen-related shallow donors. At an annealing temperature of 340°C, the E1 centres disappear and oxygen thermal donors appear. The concentrations of the oxygen thermal donors are found typically to be 2-3 decades lower than that required for over-compensating the initial p-type doping and for contributing the excess free carriers.

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