Annealing effect on the P-type carrier concentration in low-temperature processed arsenic-doped HgCdTe

1993 ◽  
Vol 22 (8) ◽  
pp. 1039-1047 ◽  
Author(s):  
S. H. Shin ◽  
J. M. Arias ◽  
M. Zandian ◽  
J. G. Pasko ◽  
L. O. Bubulac ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carrier Concentration ◽  
Annealing Effect ◽  
P Type

Ge Related Deep Level Luminescence in InGaAs Lattice Matched to InP

1989 ◽  
Vol 163 ◽  
Author(s):  
S.S. Chandvankar ◽  
A.K. Srivastava ◽  
B.M. Arora ◽  
D.K. Sharma
Keyword(s):  
Low Temperature ◽  
Carrier Concentration ◽  
Lower Energy ◽  
Deep Level ◽  
Peak Position ◽  
Type Conductivity ◽  
Pl Spectra ◽  
P Type ◽  
Lattice Matched ◽  
Ge Doping

AbstractPhotoluminescence and Hall measurements are reported on Ge doped InGaAs layers lattice matched to InP. Ge doping of these samples results in highly compensated material, with the highest Ge content sample giving a p type conductivity with carrier concentration of 5 ×1017 cm-3. Low temperature PL spectra of these samples show a broad peak from 0.55 to 0.77 eV due to Ge. The peak of luminescence shifts to lower energy with increasing Ge content. The peak position shifts to higher energy with increasing excitation like in a D-A pair transition. The PL spectra have been explained on the basis of a model which assumes tail states near the band edges due to disorder produced by the presence of Ge in the lattice.

Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity

2009 ◽  
Vol 615-617 ◽  
pp. 259-262
Author(s):  
Felix Oehlschläger ◽  
Sandrine Juillaguet ◽  
Hervé Peyre ◽  
Jean Camassel ◽  
Peter J. Wellmann
Keyword(s):  
Low Temperature ◽  
Charge Carrier ◽  
Carrier Concentration ◽  
Charge Carrier Concentration ◽  
Powerful Method ◽  
Carrier Distribution ◽  
Pl Intensity ◽  
P Type ◽  
Non Destructive

Photoluminescence(PL)-topography is a powerful method to determine the charge carrier concentration of SiC-wafers. The following work describes the development of a PL-topography method for the determination of charge carrier distribution in p-type SiC and shows the correlation of PL-Intensity and charge carrier concentration. With this setup it is possible to characterize wafers up to a size of 2” at room- and low temperature in a non-destructive way.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

Sticky thermoelectric materials for flexible thermoelectric modules to capture low-temperature waste heat

MRS Advances ◽  
2020 ◽  
Vol 5 (10) ◽  
pp. 481-487 ◽  
Author(s):  
Norifusa Satoh ◽  
Masaji Otsuka ◽  
Yasuaki Sakurai ◽  
Takeshi Asami ◽  
Yoshitsugu Goto ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Low Temperature ◽  
Waste Heat ◽  
Air Cooling ◽  
Conductive Adhesives ◽  
Hot Plate ◽  
Low Thermal Conductivity ◽  
Te Modules ◽  
P Type ◽  
Flexible Thermoelectric

ABSTRACTWe examined a working hypothesis of sticky thermoelectric (TE) materials, which is inversely designed to mass-produce flexible TE sheets with lamination or roll-to-roll processes without electric conductive adhesives. Herein, we prepared p-type and n-type sticky TE materials via mixing antimony and bismuth powders with low-volatilizable organic solvents to achieve a low thermal conductivity. Since the sticky TE materials are additionally injected into punched polymer sheets to contact with the upper and bottom electrodes in the fabrication process, the sticky TE modules of ca. 2.4 mm in thickness maintained temperature differences of ca. 10°C and 40°C on a hot plate of 40 °C and 120°C under a natural-air cooling condition with a fin. In the single-cell resistance analysis, we found that 75∼150-µm bismuth powder shows lower resistance than the smaller-sized one due to the fewer number of particle-particle interfaces in the electric pass between the upper and bottom electrodes. After adjusting the printed wiring pattern for the upper and bottom electrodes, we achieved 42 mV on a hot plate (120°C) with the 6 x 6 module having 212 Ω in the total resistance. In addition to the possibility of mass production at a reasonable cost, the sticky TE materials provide a low thermal conductivity for flexible TE modules to capture low-temperature waste heat under natural-air cooling conditions with fins for the purpose of energy harvesting.

LOW-TEMPERATURE NORMAL-STATE HALL EFFECT IN HIGH-TcBi2Sr2-xLaxCuO6+δ REVEALED BY 60 T MAGNETIC FIELDS

2002 ◽  
Vol 16 (20n22) ◽  
pp. 3171-3174
Author(s):  
F. F. BALAKIREV ◽  
J. B. BETTS ◽  
G. S. BOEBINGER ◽  
S. ONO ◽  
Y. ANDO ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Low Temperature ◽  
Carrier Concentration ◽  
Hall Coefficient ◽  
Normal State ◽  
Ground State ◽  
Low Temperatures ◽  
Optimal Doping ◽  
Underdoped Sample ◽  
Additional Support

We report low-temperature Hall coefficient in the normal state of the high-Tc superconductor Bi 2 Sr 2-x La x CuO 6+δ. The Hall coefficient was measured down to 0.5 K by suppressing superconductivity with a 60 T pulsed magnetic field. The carrier concentration was varied from overdoped to underdoped regimes by partially substituting Sr with La in a set of five samples. The observed saturation of the Hall coefficient at low temperatures suggests the ability to extract the carrier concentration of each sample. The most underdoped sample exhibits a diverging Hall coefficient at low temperatures, consistent with a depletion of carriers in the insulating ground state. The Hall number exhibits a sharp peak providing additional support for the existence of a phase boundary at the optimal doping.

scholarly journals Enhanced photoelectroctatlytic performance of etched 3C–SiC thin film for water splitting under visible light

RSC Advances ◽  
2014 ◽  
Vol 4 (97) ◽  
pp. 54441-54446 ◽  
Author(s):  
Yazhou Wang ◽  
Sheng Li ◽  
Jisheng Han ◽  
William Wen ◽  
Hao Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Visible Light ◽  
Water Splitting ◽  
P Type

A low temperature alternating supply epitaxy grown p-type 3C–SiC thin film is further etched to enhance the photoelectrocatalytic performance.

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