Properties of Chlorine-Doped Zinc Selenide Grown by Molecular Beam Epitaxy

1989 ◽  
Vol 161 ◽  
Author(s):  
S. Hwang ◽  
J. Ren ◽  
K.A. Bowers ◽  
J.W. Cook ◽  
J.F. Schetzina
Keyword(s):  
Molecular Beam Epitaxy ◽  
Zinc Selenide ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Edge Luminescence ◽  
Compensation Ratio ◽  
Substrate Temperatures ◽  
Bright Blue

ABSTRACTZnSe:Cl epilayers have been grown on (100) GaAs by MBE using a Zn to Se beam flux ratio of 2:1 and substrate temperatures as low as 225 °C. The ZnSe:Cl epilayers are highly conducting and exhibit bright blue-violet edge luminescence at 300 K. A mobility of 2480 cm2 /V-s at 40 K was measured for an n-type ZnSe:CI film that was Cl-doped to ∼2.3×1017 cm−3 and for which a compensation ratio (NA/ND) of ∼3% was calculated. Carrier concentrations as large as 6.7×1018cm−3 were obtained by increasing the temperature of the MBE oven containing the C1 dopant.

Photoluminescence spectra of undoped GaAs grown by molecular‐beam epitaxy at very high and low substrate temperatures

1986 ◽  
Vol 59 (3) ◽  
pp. 888-891 ◽  
Author(s):  
Kazuhiro Kudo ◽  
Yunosuke Makita ◽  
Ichiro Takayasu ◽  
Toshio Nomura ◽  
Toshihiko Kobayashi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Spectra ◽  
Substrate Temperatures ◽  
Very High ◽  
Undoped Gaas

Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular Beam Epitaxy Using NH3

1998 ◽  
Vol 512 ◽  
Author(s):  
N. Grandjean ◽  
M. Leroux ◽  
J. Massies ◽  
M. Mesrine ◽  
P. Lorenzini
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Buffer Layers ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Piezoelectric Field ◽  
Secondary Ion

ABSTRACTAmmonia as nitrogen precursor has been used to grow III-V nitrides by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The efficiency of NH3 has been evaluated allowing the determination of the actual V/III flux ratio used during the GaN growth. The effects of the V/III ratio variation on the GaN layer properties have been investigated by photoluminescence (PL), Hall measurements, atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS). It is found that a high V/III ratio leads to the best material quality. Optimized GaN thick buffer layers have been used to grow GaN/AlGaN quantum well (QW) heterostructures. Their PL spectra exhibit well resolved emission peaks for QW thicknesses varying from 3 to 15 monolayers. From the variation of the QW energies as a function of well width, a piezoelectric field of 450 kV/cm is deduced.

Ga/N flux ratio influence on Mn incorporation, surface morphology, and lattice polarity during radio frequency molecular beam epitaxy of (Ga,Mn)N

2003 ◽  
Vol 93 (9) ◽  
pp. 5274-5281 ◽  
Author(s):  
Muhammad B. Haider ◽  
Costel Constantin ◽  
Hamad Al-Brithen ◽  
Haiqiang Yang ◽  
Eugen Trifan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Flux Ratio ◽  
N Flux

Spin-flip Raman-scattering studies of compensating donor centers in nitrogen-doped zinc selenide grown by molecular-beam epitaxy

1996 ◽  
Vol 53 (16) ◽  
pp. 10983-10987 ◽  
Author(s):  
C. M. Townsley ◽  
J. J. Davies ◽  
D. Wolverson ◽  
P. J. Boyce ◽  
G. Horsburgh ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Raman Scattering ◽  
Zinc Selenide ◽  
Molecular Beam ◽  
Nitrogen Doped ◽  
Spin Flip

Interfacial Stability of CoSi2/Si Structures Grown by Molecular Beam Epitaxy

1991 ◽  
Vol 237 ◽  
Author(s):  
T. George ◽  
R. W. Fathauer
Keyword(s):  
Molecular Beam Epitaxy ◽  
Driving Force ◽  
Molecular Beam ◽  
Ostwald Ripening ◽  
Flux Ratio ◽  
Interfacial Stability ◽  
Capping Layer ◽  
Si Substrates ◽  
Interfacial Strain ◽  
The Stability

ABSTRACTThe stability of CoSi2/Si interfaces was examined in this study using columnar suicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were co-deposited (1:7 flux ratio) using molecular beam epitaxy at 800°C and the resulting columnar suicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800°C results in the growth of the buried suicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The columns' sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer.In the second set of experiments, annealing of a 250nm-thick buried columnar layer at 1000°C under a 100nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker (500nm) Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The' high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy

2012 ◽  
Vol 101 (15) ◽  
pp. 152104 ◽  
Author(s):  
Z. Zhang ◽  
C. A. Hurni ◽  
A. R. Arehart ◽  
J. S. Speck ◽  
S. A. Ringel
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Trap States

Effect of group V/III flux ratio on deep electron traps in AlxGa1−xAs (x=0.7) grown by molecular beam epitaxy

1986 ◽  
Vol 49 (13) ◽  
pp. 788-790 ◽  
Author(s):  
T. Hayakawa ◽  
M. Kondo ◽  
T. Suyama ◽  
K. Takahashi ◽  
S. Yamamoto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Group V ◽  
Electron Traps
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