The Role of Oxygen in p-Type InP

1989 ◽  
Vol 163 ◽  
Author(s):  
J. Michel ◽  
J. Jeong ◽  
K.M. Lee ◽  
L.C. Kimerling
Keyword(s):  
Optical Properties ◽  
Magnetic Resonance ◽  
Oxygen Concentration ◽  
Paramagnetic State ◽  
Optically Detected ◽  
P Type ◽  
Induced Defects ◽  
First Time ◽  
Oxygen Complexes

AbstractWe have studied the influence of oxygen on the optical properties of Be implanted InP. Be implanted p-type InP without oxygen shows a strong deep photoluminescence (PL) band at 0.82 eV following anneal. As the oxygen concentration increases, the 0.82 eV PL-band disappears. We attribute the disappearance of this PL-band to the formation of oxygen complexes with the implantation induced defects. In epitaxial grown, nominally undoped InP a new PL-line is observed at ~1.2 eV. The paramagnetic state of the phosphorus on indium P^ antisite is observed by optically detected magnetic resonance (ODMR) as a modulation of the photoluminescence in all Be implanted samples without oxygen. The antisite resonance is detected as a reduction of the 0.82 eV PL-band and the 1.2 eV PL-band. The observation of the Fe3+ resonance by ODMR spectroscopy is reported for the first time.

Optically Detected Magnetic Resonance of a Hydrogen-Related Complex Defect in Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
W.M. Chen ◽  
O.O. Awadelkarim ◽  
B. Monemar ◽  
J.L. Lindström ◽  
G.S. Oehrlein
Keyword(s):  
Magnetic Resonance ◽  
Boron Doped ◽  
Optically Detected Magnetic Resonance ◽  
Temperature Electron ◽  
Related Defect ◽  
Spin Triplet ◽  
Optically Detected ◽  
Recombination Channel ◽  
First Time

AbstractWe present for the first time an optically detected magnetic resonance (ODMR) study of a hydrogen-related defect in silicon. The defect is present in hydrogenated boron-doped silicon single crystals, after room-temperature electron-irradiation. A spin-triplet (S=1) is shown to be the electronic state responsible for the observed ODMR spectrum. An angular dependence study of the ODMR spectrum reveals a C2v defect symmetry. The defect model is discussed in terms of a di-hydrogen-vacancy complex. The role of this defect as an efficient recombination channel (presumably non-radiative) for the non-equilibrium free carriers is also demonstrated.

Optically Detected Magnetic Resonance and Double Beam Photoluminescence of CdS/HgS/CdS Nanoparticles

1998 ◽  
Vol 536 ◽  
Author(s):  
H. Porteanu ◽  
A. Glozman ◽  
E. Lifshitz ◽  
A. Eychmüller ◽  
H. Weller
Keyword(s):  
Optical Properties ◽  
Magnetic Resonance ◽  
Cds Nanoparticles ◽  
Electron Hole ◽  
Cladding Layer ◽  
Double Beam ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected ◽  
Cladding Layers ◽  
Hole Recombination

AbstractCdS/HgS/CdS nanoparticles consist of a CdS core, epitaxially covered by one or two monolayers of HgS and additional cladding layers of CdS. The present paper describes our efforts to identify the influence of CdS/HgS/CdS interfaces on the localization of the photogenerated carriers deduced from the magneto-optical properties of the materials. These were investigated by the utilization of optically detected magnetic resonance (ODMR) and double-beam photoluminescence spectroscopy. A photoluminescence (PL) spectrum of the studied material, consists of a dominant exciton located at the HgS layer, and additional non-excitonic band, presumably corresponding to the recombination of trapped carriers at the interface. The latter band can be attenuated using an additional red excitation. The ODMR measurements show the existence of two kinds of electron-hole recombination. These electron-hole pairs maybe trapped either at a twin packing of a CdS/HgS interface, or at an edge dislocation of an epitaxial HgS or a CdS cladding layer.

Visible Luminescence from Porous Silicon and Siloxene: Recent Results

1992 ◽  
Vol 283 ◽  
Author(s):  
H. D. Fuchs ◽  
M. Rosenbauer ◽  
M. S. Brandt ◽  
S. Ernst ◽  
S. Finkbeiner ◽  
...  
Keyword(s):  
Optical Properties ◽  
Magnetic Resonance ◽  
Porous Silicon ◽  
Time Dependent ◽  
Photoluminescence Excitation ◽  
Porous Si ◽  
Green Luminescence ◽  
Visible Luminescence ◽  
Optically Detected ◽  
Insight Into

ABSTRACTThe optical properties of porous Si (p-Si) are compared to those of siloxene and its derivatives in order to gain more insight into the mechanism of the luminescence observed in p-Si. We report new results of photoluminescence (PL), photoluminescence excitation (PLE), time-dependent and pressure-dependent photoluminescence, and optically detected magnetic resonance (ODMR). Important information about the structural, electronic, and microscopic nature of the two classes of materials are deduced from these experiments. Annealed siloxene and p-Si show very similar properties, suggesting that siloxene-related structures, e.g. electrically isolated Si6-rings, might be responsible for the luminescence in p-Si. The Si-planes in as-prepared siloxene, with their green luminescence, are metastable and are readily oxidized into red-luminescent siloxene configurations.

Optical and Magnetic Resonance Investigations of Mercuric Iodide Crystals

1992 ◽  
Vol 242 ◽  
Author(s):  
B.K. Meyer ◽  
D.M. Hofmann ◽  
J. Eckstein ◽  
K.W. Benz
Keyword(s):  
Optical Properties ◽  
Circular Dichroism ◽  
Magnetic Resonance ◽  
Optical Absorption ◽  
Magnetic Circular Dichroism ◽  
Energy Levels ◽  
Mercuric Iodide ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected ◽  
Circular Dichroïsm

ABSTRACTThe optical properties of the red modification of mercuric iodide (HgJ2) were studied by optical absorption, magnetic circular dichroism, photoluminescence and optically detected magnetic resonance investigations. The experiments demonstrate the involvment of acceptors with energy levels at Ev + 0.14 ± 0.01 eV and 0.15 ± 0.01 eV in the absorption and recombination at 2.2 eV. The g - values are 0.85 and 0.74, respectively.

An ODMR Study of The Killer Center Fe in GaP:O

1985 ◽  
Vol 46 ◽  
Author(s):  
K. M. Lee ◽  
L. C. Kimerling ◽  
M. D. Sturge
Keyword(s):  
Excited State ◽  
Magnetic Resonance ◽  
Acceptor Pair ◽  
Resonance Technique ◽  
Magnetic Resonance Technique ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Optically Detected ◽  
Killing Action

AbstractThe role of the luminescence killer center iron in GaP has been studied by the optically detected magnetic resonance technique. Observations of strong Fe°(3d5) and O0 resonance in the (Zn,O) donor-acceptor pair (DAP) and the 0.841 eV electron capture (EC) luminescence bands show that the luminescence killing action is via (Fe,O) DAP recombination.Two distinct but similar (Fe,O) DAP processes were detected: The (Fe0,O0) process with a slower recombination rate and (Fe0,O0*) process, with a faster effective relaxation rate, involving the oxygen excited state.

scholarly journals Human RASSF7 regulates the microtubule cytoskeleton and is required for spindle formation, Aurora B activation and chromosomal congression during mitosis

2010 ◽  
Vol 430 (2) ◽  
pp. 207-213 ◽  
Author(s):  
Asha Recino ◽  
Victoria Sherwood ◽  
Amy Flaxman ◽  
Wendy N. Cooper ◽  
Farida Latif ◽  
...  
Keyword(s):  
Cell Types ◽  
Aurora B ◽  
Domain Family ◽  
Microtubule Cytoskeleton ◽  
Spindle Formation ◽  
Important Regulator ◽  
Different Cell Types ◽  
Induced Defects ◽  
First Time

RASSF7, a member of the N-terminal Ras association domain family, has increased expression in various cancers and, on the basis of our previous work in Xenopus embryos, may be a regulator of mitosis. In the present study, we address, for the first time, the role of human RASSF7 in mitosis. We demonstrate that RASSF7 is expressed in a broad range of different cell types and that this expression could be enhanced following exposure to hypoxia. Knocking down RASSF7 in human cell lines inhibited cell growth and induced defects in mitosis, including aberrant spindle formation and a failure in chromosomal congression. In order to understand the molecular basis of the defects in more detail, we analysed the activity of mitotic signalling proteins and found that activation of Aurora B did not occur in cells in which RASSF7 was knocked down. We also show that endogenous RASSF7 protein localizes to the centrosome and demonstrate using microtubule-regrowth assays that RASSF7 is an important regulator of microtubule dynamics. On the basis of these observations, we propose that, owing to its key role in regulating the microtubule cytoskeleton, RASSF7 is required for mitosis in human cells.

Nature and Formation of Non-Radiative Defects in GaNAs And InGaAsN

2001 ◽  
Vol 692 ◽  
Author(s):  
W. M. Chen ◽  
N. Q. Thinh ◽  
I. A. Buyanova ◽  
P. N. Hai ◽  
H. P. Xin ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Radiative Recombination ◽  
Molecular Beam ◽  
Deep Level ◽  
The Other ◽  
Temperature Growth ◽  
Carrier Recombination ◽  
Recombination Centers ◽  
Optically Detected

AbstractThe optically detected magnetic resonance (ODMR) technique has been employed to examine the nature and formation mechanism of non-radiative defects in GaNAs and InGaAsN. In both alloys, two defects were observed and were shown to be deep-level, non-radiative recombination centers. One of the defects has been identified as a complex involving an AsGa antisite. These two defects gain more importance with increasing N composition up to 3%, presumably due to an increase in their concentration. With a further higher N composition, the defects start to lose importance in carrier recombination that is attributed to an increasingly important role of other new non-radiative channels introduced with a high N composition. On the other hand, effect of In composition up to 3% seems to be only marginal. Both defects were shown to be preferably introduced in the alloys during low-temperature growth by molecular beam epitaxy (MBE), but can be rather efficiently removed by post-growth rapid thermal annealing.

Optically Detected Magnetic Resonance Studies of Undoped a-Si:H

1996 ◽  
Vol 420 ◽  
Author(s):  
N. Schultz ◽  
Z. V. Vardeny ◽  
P. C. Taylor
Keyword(s):  
Magnetic Resonance ◽  
Spectral Range ◽  
Underlying Mechanism ◽  
Carrier Dynamics ◽  
Photogenerated Carrier ◽  
Photoinduced Absorption ◽  
Magnetic Resonance Studies ◽  
Optically Detected ◽  
Magnetic Resonances ◽  
First Time

AbstractPhotogenerated carrier dynamics in undoped a-Si:H have been studied by photoinduced absorption (PA), photoluminescence (PL) and their respective optically detected magnetic resonances: PADMiR and PLDMR. We have detected for the first time the “g = 4” resonance in PADMR, in addition to the previously measured narrow and broad resonances at g≈2. We compare the PADMR and PLDMR resonances over a broad spectral range of detection energies and conclude from the similarities that they share a common underlying mechanism. The PADMIR spectra of the narrow and the broad resonances at g≈2, measured in the spectral range of 0.7 to 1.7 eV, suggest that a correlation exists between the two resonances and PA.

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