Optically Detected Magnetic Resonance of a Hydrogen-Related Complex Defect in Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
W.M. Chen ◽  
O.O. Awadelkarim ◽  
B. Monemar ◽  
J.L. Lindström ◽  
G.S. Oehrlein
Keyword(s):  
Magnetic Resonance ◽  
Boron Doped ◽  
Optically Detected Magnetic Resonance ◽  
Temperature Electron ◽  
Related Defect ◽  
Spin Triplet ◽  
Optically Detected ◽  
Recombination Channel ◽  
First Time

AbstractWe present for the first time an optically detected magnetic resonance (ODMR) study of a hydrogen-related defect in silicon. The defect is present in hydrogenated boron-doped silicon single crystals, after room-temperature electron-irradiation. A spin-triplet (S=1) is shown to be the electronic state responsible for the observed ODMR spectrum. An angular dependence study of the ODMR spectrum reveals a C2v defect symmetry. The defect model is discussed in terms of a di-hydrogen-vacancy complex. The role of this defect as an efficient recombination channel (presumably non-radiative) for the non-equilibrium free carriers is also demonstrated.

The Role of Oxygen in p-Type InP

1989 ◽  
Vol 163 ◽  
Author(s):  
J. Michel ◽  
J. Jeong ◽  
K.M. Lee ◽  
L.C. Kimerling
Keyword(s):  
Optical Properties ◽  
Magnetic Resonance ◽  
Oxygen Concentration ◽  
Paramagnetic State ◽  
Optically Detected ◽  
P Type ◽  
Induced Defects ◽  
First Time ◽  
Oxygen Complexes

AbstractWe have studied the influence of oxygen on the optical properties of Be implanted InP. Be implanted p-type InP without oxygen shows a strong deep photoluminescence (PL) band at 0.82 eV following anneal. As the oxygen concentration increases, the 0.82 eV PL-band disappears. We attribute the disappearance of this PL-band to the formation of oxygen complexes with the implantation induced defects. In epitaxial grown, nominally undoped InP a new PL-line is observed at ~1.2 eV. The paramagnetic state of the phosphorus on indium P^ antisite is observed by optically detected magnetic resonance (ODMR) as a modulation of the photoluminescence in all Be implanted samples without oxygen. The antisite resonance is detected as a reduction of the 0.82 eV PL-band and the 1.2 eV PL-band. The observation of the Fe3+ resonance by ODMR spectroscopy is reported for the first time.

Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study

2000 ◽  
Vol 62 (16) ◽  
pp. R10607-R10609 ◽  
Author(s):  
P. N. Hai ◽  
W. M. Chen ◽  
I. A. Buyanova ◽  
B. Monemar ◽  
H. Amano ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Magnetic Resonance Study ◽  
Optically Detected Magnetic Resonance ◽  
Related Defect ◽  
Optically Detected

Optically Detected Magnetic Resonance and Double Beam Photoluminescence of CdS/HgS/CdS Nanoparticles

1998 ◽  
Vol 536 ◽  
Author(s):  
H. Porteanu ◽  
A. Glozman ◽  
E. Lifshitz ◽  
A. Eychmüller ◽  
H. Weller
Keyword(s):  
Optical Properties ◽  
Magnetic Resonance ◽  
Cds Nanoparticles ◽  
Electron Hole ◽  
Cladding Layer ◽  
Double Beam ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected ◽  
Cladding Layers ◽  
Hole Recombination

AbstractCdS/HgS/CdS nanoparticles consist of a CdS core, epitaxially covered by one or two monolayers of HgS and additional cladding layers of CdS. The present paper describes our efforts to identify the influence of CdS/HgS/CdS interfaces on the localization of the photogenerated carriers deduced from the magneto-optical properties of the materials. These were investigated by the utilization of optically detected magnetic resonance (ODMR) and double-beam photoluminescence spectroscopy. A photoluminescence (PL) spectrum of the studied material, consists of a dominant exciton located at the HgS layer, and additional non-excitonic band, presumably corresponding to the recombination of trapped carriers at the interface. The latter band can be attenuated using an additional red excitation. The ODMR measurements show the existence of two kinds of electron-hole recombination. These electron-hole pairs maybe trapped either at a twin packing of a CdS/HgS interface, or at an edge dislocation of an epitaxial HgS or a CdS cladding layer.

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