scholarly journals Infrared Absorption Study of Zinc-Doped Silicon.

1989 ◽  
Vol 163 ◽  
Author(s):  
E. Merk ◽  
J. Heyman ◽  
E. E. Haller
Keyword(s):  
Excited States ◽  
Infrared Absorption ◽  
Absorption Study ◽  
Rydberg Series ◽  
Cell Potential ◽  
Group Iii ◽  
Mass Approximation ◽  
Doped Silicon ◽  
First Time ◽  
Hole Transition

AbstractWe report high resolution infrared absorption spectra associated with the deep zinc acceptor in silicon. The optical transitions between ground and bound excited “p-like” states of the neutral helium-like double acceptor Zn0 center have been observed for the first time. The absorption cross section for the hole transition is found to be very small, of the order of 10-17 cm2. Energy spacings of the P3/2 Rydberg series are very similar to the spacings of the group-III acceptors, suggesting that, in spite of the large ground state binding energy, effective mass approximation still applies to the bound excited states. This represents one more case where the strong central cell potential does not significantly disturb the neutral helium-like bound excited states. Similar observations have been made for the less deep neutral double acceptor Be, and for the chalcogens donors S, Se and Te.The optical ionization energy of Zn0/- has been determined to be 2575 cm-1 (319 meV).Two additional sets of absorption lines related to zinc have been observed at 2130 cm-1 and 2758 cm-1. Their origin will be discussed.

scholarly journals Vibrational Relaxation and Redistribution Dynamics in Ruthenium(II) Polypyridyl-Based Charge-Transfer Excited States: A Combined Ultrafast Electronic and Infrared Absorption Study

2018 ◽  
Vol 122 (40) ◽  
pp. 7941-7953 ◽  
Author(s):  
Allison M. Brown ◽  
Catherine E. McCusker ◽  
Monica C. Carey ◽  
Ana Maria Blanco-Rodríguez ◽  
Michael Towrie ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Excited States ◽  
Infrared Absorption ◽  
Vibrational Relaxation ◽  
Absorption Study

ABSORPTION-LINE BROADENING IN BORON-DOPED SILICON

1967 ◽  
Vol 45 (8) ◽  
pp. 2797-2804 ◽  
Author(s):  
J. J. White
Keyword(s):  
Absorption Line ◽  
Excited States ◽  
Half Width ◽  
Line Broadening ◽  
Additional Information ◽  
Boron Doped ◽  
Doped Silicon ◽  
Time Part ◽  
Width Measurements ◽  
First Time

In boron-doped silicon, the excitation of bound holes from the acceptor ground state to the excited states leads to an infrared absorption-line spectrum. In a recent half-width study of the boron absorption lines, Colbow (1963) separated the various line-broadening contributions for the first time. Part of Colbow's half-widths is now found to be due to external strains introduced by the sample mounting. New half-width measurements of "strain-free" mounted boron-doped silicon are presented, Colbow's work is corrected, and additional information regarding the various broadening contributions is given.

scholarly journals Mechanical and Thermoelectric Properties of Bulk AlSb Synthesized by Controlled Melting, Pulverizing and Subsequent Vacuum Hot Pressing

2019 ◽  
Vol 9 (8) ◽  
pp. 1609 ◽  
Author(s):  
A. K. M. Ashiquzzaman Shawon ◽  
Soon-Chul Ur
Keyword(s):  
Mechanical Properties ◽  
Intermetallic Compound ◽  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Single Phase ◽  
Aluminum Antimonide ◽  
Simple Method ◽  
Group Iii ◽  
Indirect Band Gap ◽  
First Time

Aluminum antimonide is a semiconductor of the Group III-V order. With a wide indirect band gap, AlSb is one of the least discovered of this family of semiconductors. Bulk synthesis of AlSb has been reported on numerous occasions, but obtaining a single phase has always proven to be extremely difficult. This work reports a simple method for the synthesis of single-phase AlSb. Subsequently, consolidation was done into a near single-phase highly dense semiconductor in a form usable for thermoelectric applications. Further, the thermoelectric properties of this system are accounted for the first time. In addition, the mechanical properties of the intermetallic compound are briefly discussed for a possibility of further use.

Rapid Thermal Oxidation of Lightly Doped Silicon in N2O

1994 ◽  
Vol 342 ◽  
Author(s):  
S.C. Sun ◽  
L.S. Wang ◽  
F.L. Yeh ◽  
T.S. Lai ◽  
Y.H. Lin
Keyword(s):  
Growth Rate ◽  
Thermal Oxidation ◽  
Charge Trapping ◽  
Interface State ◽  
Constant Current ◽  
Mos Capacitor ◽  
Rapid Thermal Oxidation ◽  
Doped Silicon ◽  
State Generation ◽  
First Time

ABSTRACTIn this paper, a detailed study is presented for the growth kinetics of rapid thermal oxidation of lightly-doped silicon in N2O and O2 on (100), (110), and (111) oriented substrates. It was found that (110)-oriented Si has the highest growth rate in both N2O and dry O2, and (100) Si has the lowest rate. There is no “crossover” on the growth rate of rapid thermal N2O oxidation between (110) Si and (111) Si as compared to oxides grown in furnace N2O. Pressure dependence of rapid thermal N2O oxidation is reported for the first time. MOS capacitor results show that the low-pressure (40 Torr) N2O-grown oxides have much less interface state generation and charge trapping under constant current stress as compared to oxides grown in either 760 Torr N2O or O2 ambient.

Time-resolved infrared absorption study of nine TiO2 photocatalysts

2007 ◽  
Vol 339 (1-3) ◽  
pp. 133-137 ◽  
Author(s):  
Akira Yamakata ◽  
Taka-aki Ishibashi ◽  
Hiroshi Onishi
Keyword(s):  
Infrared Absorption ◽  
Absorption Study ◽  
Time Resolved ◽  
Tio2 Photocatalysts

Infrared absorption study of Li‐diffused Mg‐doped GaAs

1972 ◽  
Vol 43 (10) ◽  
pp. 4096-4104 ◽  
Author(s):  
P. C. Leung ◽  
L. H. Skolnik ◽  
W. P. Allred ◽  
W. G. Spitzer
Keyword(s):  
Infrared Absorption ◽  
Absorption Study ◽  
Mg Doped

scholarly journals Infrared Absorption Study of Human Proinsulin C-Peptide Fragments in Dichloromethane

1986 ◽  
Vol 59 (8) ◽  
pp. 2445-2449 ◽  
Author(s):  
Mitsuaki Narita ◽  
Toshihiko Ogura ◽  
Kazuhiro Sato ◽  
Shinya Honda
Keyword(s):  
Infrared Absorption ◽  
Absorption Study ◽  
Peptide Fragments ◽  
C Peptide ◽  
Human Proinsulin

scholarly journals INFRARED ABSORPTION OF DOPED SILICON PASSIVATED BY ATOMIC HYDROGEN, DEUTERIUM AND IMPLANTED BY PROTON

1987 ◽  
Vol 36 (11) ◽  
pp. 1427
Author(s):  
DU YONG-CHANG ◽  
YAN MAO-XUN ◽  
ZHANG YU-FENG ◽  
GUO HAI ◽  
HU KE-LIANG
Keyword(s):  
Infrared Absorption ◽  
Atomic Hydrogen ◽  
Doped Silicon ◽  
Hydrogen Deuterium

Energy, fine structure, and transition rate of the doubly excited 3Pe and 3De states for helium

2003 ◽  
Vol 81 (12) ◽  
pp. 1419-1425 ◽  
Author(s):  
X -L Wu ◽  
B -C Gou ◽  
F Wang
Keyword(s):  
Fine Structure ◽  
Variational Method ◽  
Excited States ◽  
Transition Rate ◽  
Oscillator Strengths ◽  
Transition Rates ◽  
Rydberg Series ◽  
Doubly Excited States ◽  
Quantum Numbers ◽  
Doubly Excited

Energies and fine-structure corrections for the doubly excited 3Pe and 3De states of the helium atom are calculated using the Rayleigh–Ritz variational method and the saddle-point variational method with a multiconfiguration-interaction function. The relativistic and mass polarization corrections are included. The oscillator strengths, transition rates, and wavelengths are also calculated. The doubly excited states are grouped into Rydberg series labeled by the quantum numbers K, T, and A to display the systematic regularity along the series. The results are compared with the theoretical and experimental data in the literature. PACS Nos.: 31.15.Pf, 31.25.Jf, 32.70.Cs

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