scholarly journals INFRARED ABSORPTION OF DOPED SILICON PASSIVATED BY ATOMIC HYDROGEN, DEUTERIUM AND IMPLANTED BY PROTON

1987 ◽  
Vol 36 (11) ◽  
pp. 1427
Author(s):  
DU YONG-CHANG ◽  
YAN MAO-XUN ◽  
ZHANG YU-FENG ◽  
GUO HAI ◽  
HU KE-LIANG
Keyword(s):  
Infrared Absorption ◽  
Atomic Hydrogen ◽  
Doped Silicon ◽  
Hydrogen Deuterium

INFRARED ABSORPTION BANDS IN CARBON‐ AND OXYGEN‐DOPED SILICON

1968 ◽  
Vol 13 (10) ◽  
pp. 343-346 ◽  
Author(s):  
Frederick L. Vook ◽  
Herman J. Stein
Keyword(s):  
Infrared Absorption ◽  
Absorption Bands ◽  
Doped Silicon ◽  
Infrared Absorption Bands

Thallium‐doped silicon ionization and excitation levels by infrared absorption

1975 ◽  
Vol 46 (5) ◽  
pp. 2130-2133 ◽  
Author(s):  
Joseph H. Nevin ◽  
H. Thurman Henderson
Keyword(s):  
Infrared Absorption ◽  
Doped Silicon

Calibration of IR Absorbance in Highly Nitrogen Doped Silicon

2013 ◽  
Vol 205-206 ◽  
pp. 234-237
Author(s):  
Kevin Lauer ◽  
Christian Möller ◽  
Rudolf Porytskyy ◽  
Hartmuth Strutzberg ◽  
Dirk Schulze ◽  
...  
Keyword(s):  
Absorption Coefficient ◽  
Infrared Absorption ◽  
Nitrogen Concentration ◽  
Calibration Factor ◽  
Ir Absorption ◽  
Calibration Function ◽  
Nitrogen Doped ◽  
Float Zone ◽  
Doped Silicon ◽  
Infrared Absorption Spectra

Infrared absorption spectra of highly nitrogen doped multicrystalline float zone silicon are reported. By measuring the nitrogen content in silicon using SIMS, a calibration function of the IR absorption coefficient at 963 cm-1(T = 300 K) and the nitrogen concentration is deduced:cN= (1.29 ± 0.05)×1017cm2α963. The calibration factor is 30 % less than the calibration factor reported by Y. Itoh et al. [Appl. Phys. Lett. 47 (1985) 488].

Adsorption and abstraction of atomic hydrogen (deuterium) on Al(100)

1998 ◽  
Vol 395 (1) ◽  
pp. 98-110 ◽  
Author(s):  
J Boh ◽  
G Eilmsteiner ◽  
K.D Rendulic ◽  
A Winkler
Keyword(s):  
Atomic Hydrogen ◽  
Hydrogen Deuterium
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