Junction lines of inversion domain boundaries with stacking faults in GaN

2004 ◽  
Vol 70 (11) ◽  
Author(s):  
J. Kioseoglou ◽  
G. P. Dimitrakopulos ◽  
Ph. Komninou ◽  
H. M. Polatoglou ◽  
A. Serra ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN

2000 ◽  
Vol 639 ◽  
Author(s):  
Philomela Komninou ◽  
Joseph Kioseoglou ◽  
Eirini Sarigiannidou ◽  
George P. Dimitrakopulos ◽  
Thomas Kehagias ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Stacking Faults ◽  
High Resolution Electron Microscopy ◽  
High Energy ◽  
Low Energy ◽  
Inversion Domain ◽  
Resolution Electron ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

ABSTRACTThe interaction of growth intrinsic stacking faults with inversion domain boundaries in GaN epitaxial layers is studied by high resolution electron microscopy. It is observed that stacking faults may mediate a structural transformation of inversion domain boundaries, from the low energy types, known as IDB boundaries, to the high energy ones, known as Holt-type boundaries. Such interactions may be attributed to the different growth rates of adjacent domains of inverse polarity.

Atomic structure and energy of junctions between inversion domain boundaries and stacking faults in wurtzite GaN

2003 ◽  
Vol 0 (7) ◽  
pp. 2464-2469 ◽  
Author(s):  
J. Kioseoglou ◽  
A. Béré ◽  
G.P. Dimitrakopulos ◽  
A. Serra ◽  
G. Nouet ◽  
...  
Keyword(s):  
Atomic Structure ◽  
Stacking Faults ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

Structural transition of inversion domain boundaries through interactions with stacking faults in epitaxial GaN

2001 ◽  
Vol 64 (24) ◽  
Author(s):  
G. P. Dimitrakopulos ◽  
Ph. Komninou ◽  
J. Kioseoglou ◽  
Th. Kehagias ◽  
E. Sarigiannidou ◽  
...  
Keyword(s):  
Structural Transition ◽  
Stacking Faults ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

Oxygen incorporation in aluminum nitride via extended defects: Part III. Reevaluation of the polytypoid structure in the aluminum nitride-aluminum oxide binary system

1995 ◽  
Vol 10 (10) ◽  
pp. 2573-2585 ◽  
Author(s):  
Alistair D. Westwoord ◽  
Robert A. Youngman ◽  
Martha R. McCartney ◽  
Alasiair N. Cormack ◽  
Michael R. Notis
Keyword(s):  
Aluminum Nitride ◽  
Stacking Faults ◽  
Structural Rearrangement ◽  
Extended Defects ◽  
Structural Elements ◽  
Inversion Domain ◽  
Transmission Electron ◽  
New Variant ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

This paper extends the concepts that were developed to explain the structural rearrangement of the wurtzite AlN lattice due to incorporation of small amounts of oxygen, and to directly use them to assist in understanding the polytypoid structures. Conventional and high-resolution transmission electron microscopy, specific electron diffraction experiments, and atomistic computer simulations have been used to investigate the structural nature of the polytypoids. The experimental observations provide compelling evidence that polytypoid structures are not arrays of stacking faults, but are rather arrays of inversion domain boundaries (IDB's). A new model for the polytypoid structure is proposed with the basic repeat structural unit consisting of a planar IDB-P and a corrugated IDB. This model shares common structural elements with the model proposed by Thompson, even though in his model the polytypoids were described as consisting of stacking faults. Small additions (≃ 1000 ppm) of silicon were observed to have a dramatic effect on the polytypoid structure. First, it appears that the addition of Si causes the creation of a new variant of the planar IDB (termed IDB-P'), different from the IDB-P defect observed in the AlN-Al2O3 polytypoids; second, the addition of Si influences the structure of the corrugated IDB, such that it appears to become planar.

The Atomic Structure of Extended Defects in GaN

1999 ◽  
Vol 595 ◽  
Author(s):  
P. Ruterana ◽  
G. Nouet
Keyword(s):  
Grain Boundaries ◽  
Atomic Structure ◽  
Stacking Faults ◽  
Threading Dislocations ◽  
Extended Defects ◽  
High Angle ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries ◽  
Edge Dislocations

AbstractGaN layers contain large densities (1010 cm−2) of threading dislocations, nanopipes, (0001) and { 1120 } stacking faults, and { 1010 } inversion domains. Three configurations have been found for pure edge dislocations, mainly inside high angle grain boundaries where the 4 atom ring cores can be stabilized. Two atomic configurations, related by a 1/6 < 1010 > stair rod dislocation, have been observed for the { 1120 } stacking fault in (Ga-Al)N layers. For the {1010} inversion domain boundaries, a configuration corresponding to the Holt model was observed, as well as another with no N-N or Ga-Ga bonds.

Atomic-scale models of interactions between inversion domain boundaries and intrinsic basal stacking faults in GaN

2002 ◽  
Vol 11 (3-6) ◽  
pp. 905-909 ◽  
Author(s):  
J. Kioseoglou ◽  
G.P. Dimitrakopulos ◽  
H.M. Polatoglou ◽  
L. Lymperakis ◽  
G. Nouet ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Atomic Scale ◽  
Inversion Domain ◽  
Scale Models ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

scholarly journals Inversion domain boundaries in wurtzite GaN

2021 ◽  
Vol 103 (16) ◽  
Author(s):  
M. M. F. Umar ◽  
Jorge O. Sofo
Keyword(s):  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

Microstructral Investigations on GaN Films Grown by Laser Induced Molecular Beam Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
H. Zhou ◽  
F. Phillipp ◽  
M. Gross ◽  
H. Schröder
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Threading Dislocations ◽  
Planar Defects ◽  
Sapphire Substrates ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Line Defects ◽  
Inversion Domain Boundaries

AbstractMicrostructural investigations on GaN films grown on SiC and sapphire substrates by laser induced molecular beam epitaxy have been performed. Threading dislocations with Burgers vectors of 1/3<1120>, 1/3<1123> and [0001] are typical line defects, predominantly the first type of dislocations. Their densities are typically 1.5×1010 cm−2 and 4×109 cm−2 on SiC and sapphire, respectively. Additionally, planar defects characterized as inversion domain boundaries lying on {1100} planes have been observed in GaN/sapphire samples with an inversion domain density of 4×109 cm−2. The inversion domains are of Ga-polarity with respect to the N-polarity of the adjacent matrix. However, GaN layers grown on SiC show Ga-polarity. Possible reasons for the different morphologies and structures of the films grown on different substrates are discussed. Based on an analysis of displacement fringes of inversion domains, an atomic model of the IDB-II with Ga-N bonds across the boundary was deduced. High resolution transmission electron microscopy (HRTEM) observations and the corresponding simulations confirmed the IDB-II structure determined by the analysis of displacement fringes.

Inversion Domain Boundaries in GaN Grown on Sapphire

1996 ◽  
Vol 449 ◽  
Author(s):  
L. T. Romano ◽  
J.E. Northrup
Keyword(s):  
Dark Field ◽  
Hydride Vapor Phase Epitaxy ◽  
Dark Field Imaging ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Convergent Beam ◽  
Inversion Domain Boundaries ◽  
Field Imaging ◽  
Beam Diffraction

ABSTRACTInversion domain boundaries (IDBs) in GaN grown on sapphire (0001) were studied by a combination of high resolution transmission electron microscopy, multiple dark field imaging, and convergent beam diffraction. Films grown by molecular beam epitaxy (MBE), metalorganic vapor deposition (MOCVD), and hydride vapor phase epitaxy (HVPE) were investigated and all found to contain IDBs. Inversion domains (IDs) that extended from the surface to the interface were found to be columnar with facets on the {10–10} and {11–20} planes. Other domains ended within the film that formed IDBs on the (0001) and {1–102} planes. The domains were found to grow in clusters and connect at points along the boundary.

Sign in / Sign up

Export Citation Format

Share Document